ROHM BD45XXXG, BD46XXXG Technical data
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BD45XXXG
Voltage detectors
BD46XXXG
VOLTAGE DETECTOR IC
with counter timer
BD45XXXG
BD46XXXG
BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption
VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit
have developed. Delay time is fixed in the IC due to the built-in counter timer to require no external
capacitor. Total 156 types of VOLTAGE DETECTOR ICs including BD45XXXG series (Nch open drain
output) and BD46XXXG series (CMOS output), each of which has 26 kinds in every 0.1V step (2.3~4.8V)
and three kinds of delay time (50msec, 100msec, 200msec) have developed.
Applications
Every kind of appliances with microcontroller and logic circuit
Features
1) Built-in delay time circuit
(Fixed delay time by the built-in ±10% of high-accuracy counter timer)
2) No external capacitor for setting delay time required
3) 3 kinds of delay time: 50msec(Typ.)(BD45XX5G,BD46XX5G)
100msec(Typ.)(BD45XX1G,BD46XX1G)
200msec(Typ.)(BD45XX2G,BD46XX2G)
4) Detection voltage: 2.3V ~ 4.8V 0.1V step
5) High-accuracy detection voltage: ±1.0%
6) Ultra low current consumption: 0.85µA typ.
7) Output circuit: Nch open drain(BD45XXXG)
CMOS(BD46XXXG)
8) Package: SSOP5(SMP5C2)
9) Operating temperature range: -40°C ~ +105°C
BD45XXXG
BD46XXXG
1
2
2.9±0.2
(5)
0.2
0.1
0.2
–
+
±
1.6
2.8
±
1.1
1.25MAX
SSOP5(SMP5C2)
5
4
1pin : External RESET
control
2pin : Connect to
Sub, GND
3pin : GND
3
4pin : VOUT
5pin : VDD
(UNIT:mm)
(4)
0.2MIN
(2)(1)
(3)
0.05
0.95
0.05
±
0.05
0.42
0.1
0.13
+
–
0.05
0.04
+0.05
–0.03
Application Circuit
BD45XXXG BD46XXXG
VDD
Reset
Vout
1 2 3 4 5
ER Sub GND VOUT VDD
Vref
VDD
VDD
GND ER
Oscillation circuit
counter timer
Pin No.
SSOP5
Vref
VDD
VDD
GND
Oscillation circuit
counter timer
ER
Vout
Reset
1/4
Voltage detectors
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Power supply voltage
Output
voltage
ER pin input voltage
Power dissipation:SSOP5
Operating temperature range
Storage temperature range
∗1 Derating: 5.4mW/˚C for operation above Ta=25˚C.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)
Nch open drain output
CMOS output
Symbol Unit
VDD – GND
VOUT
VCT
∗1
Pd
GND – 0.3 ~ VDD + 0.3
GND – 0.3 ~ VDD + 0.3
Topr
Tstg
Electrical characteristics (Unless otherwise noted; Ta=
Parameter
Detection voltage
temperature coefficient
Hysteresis voltage
Circuit current when ON
Circuit current when OFF
Min. operating voltage
"L" output current
"H" output current
Output leak current
"H" transmission
delay time
ER pin "H" voltage
ER pin "L" voltage
ER pin input current
∗1 This value is guranteed at Ta=25˚C.
Note) RL is not necessary for CMOS output type.
Note) Please refer to the detection voltage of Line-up table.
Symbol Min. Max. Unit ConditionsTyp.
∗1
VDET/∆T — ±100 ±360 ppm/˚C
VDETX0.03
∗1
Icc1
— 0.70 2.10 VDET=2.3~3.1V
— 0.75 2.25
—
∗1
Icc2
— 0.75 VDET=2.3~3.1V2.25
—
—
0.95 — — VVOPL RL=470kΩ, VOL≥0.4V
0.4 1.2 — VDS=0.5V, VDD=1.2V
2.0 5 —
∗1
IOH
∗1
Ilaek
∗1
tPLH
1.0 2.2
1.2 2.7 —
—
45 50 55
90 100 110
180 200 220
∗1
VEH
∗1
2.0 — —
— — 0.8VEL
— 1 10IER
Limits
– 0.3 ~ + 10
GND – 0.3 ~ + 10
540
– 40 ~ + 105
– 55 ~ + 125
-
25˚C ~ +105˚C)
VDETX0.05
VDETX0.08
0.80
0.80
0.85
—
2.40
2.40
2.55
—
0.1
V
V
V
mW
˚C
˚C
%∆VDET
µA
µA
mAIOL
mA
µA
V
V
V
µA
BD45XXXG
BD46XXXG
Ta=-40˚C ~ +105˚C
RL=470KΩ, VDD=L→H→L
VDD=VDET–0.2V
VDD=VDET+2V
VDS=0.5V, VDD=2.4V (VDET≥2.7V)
VDS=0.5V, VDD=4.8V
VDS=0.5V, VDD=6.0V VDET=4.3~4.8V
VDD=VDS=10V
RL=100kΩ
CL=100pF
VER=2.0V
VDET=3.2~4.2V
VDET=4.3~4.8V
VDET=3.2~4.2V
VDET=4.3~4.8V
VDET=2.3~4.2V
BD45XX5G, BD46XX5G
BD45XX1G, BD46XX1G
BD45XX2G, BD46XX2G
Characteristic diagram and Measurement circuit
250
(BD4x28xG tPLH)
200
150
100
tPLH (msec)
50
0
-60-40-
VDET±0.5V
Output delay time "L → H"
BD45282G
BD45281G
BD45285G
20 20 40 60 80 100 120
0
Ta (°C)
5V
VDD
VOUTER
GND
RL=100kΩ
100pF
50
40
30
20
tPLH [µsec]
10
-60-40-
VDET±0.5V
0
Output delay time "H → L"
(BD4x28x tPLH)
20 20 40 60 80 100 120
0
Ta (°C)
5V
RL=100kΩ
100pF
ER
VDD
VOUT
GND
2/4
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