ROHM BD3540NUV Technical data

Hi-performance Regulator IC Series for PCs

Nch FET Ultra LDOs
for Desktop PCs Chipsets with Power Good

BD3540NUV, BD3541NUV

●Description

The BD3540NUV, BD3541NUV low-voltage output linear 1ch series chipset regulator IC operates from a very low input
supply, and offers ideal performance in low input voltage to low output voltage applications. It incorporates a built-in
N-MOSFET power transistor to minimize the input-to-output voltage differential to the ON resistance (R
400mΩ) level. By lowering the dropout voltage in this way, the regulator realizes high current output (Iomax=0.5A～1.0A)
with reduced conversion loss, and thereby obviates the switching regulator and its power transistor, choke coil, and rectifier
diode. Thus, the BD3540NUV, BD3541NUV are designed to enable significant package profile downsizing and cost
reduction. An external resistor allows the entire range of output voltage configurations between 0.65 and 2.7V, while the
NRCS (soft start) function enables a controlled output voltage ramp-up, which can be programmed to whatever power
supply sequence is required.

●Features

1) High-precision voltage regulator(0.65V±1%)

2) Built-in VCC undervoltage lockout circuit

3) NRCS (soft start) function reduces the magnitude of in-rush current

4) Internal Nch MOSFET driver offers low ON resistance

5) Built-in current limit circuit

6) Built-in thermal shutdown (TSD) circuit

7) Variable output

8) Small package VSON010V3030 : 3.0×3.0×1.0(mm)

9) Tracking function

●Applications

Notebook computers, Desktop computers, LCD-TV, DVD, Digital appliances

●Line-up

It is available to select power supply voltage and maximum output voltage.

Maximum Output Voltage Package Vcc=5V

0.5A

1.0A BD3541NUV

VSON010V3030

BD3540NUV

No.09030EBT04

ON=200mΩ～

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1/16

2009.04 - Rev.B

BD3540NUV, BD3541NUV

Technical Note

●Absolute maximum ratings
◎BD3540NUV, BD3541NUV

Parameter Symbol

BD3540NUV BD3541NUV

Limit

Unit

Input Voltage 1 VCC +6.0 *1 V

Input Voltage 2 VIN +6.0 *1 V

Enable Input Voltage Ven -0.3～+6.0 V

PGOOD Input Voltage V

+6.0*1 V

PGOOD

Power Dissipation 1 Pd1 0.70*2 W

Power Dissipation 2 Pd2 1.27*2 W

Power Dissipation 3 Pd3 3.03*2 W
Operating Temperature Range Topr -10～+100 ℃
Storage Temperature Range Tstg -55～+150 ℃
Junction Temperature Tjmax +150 ℃

*1 Should not exceed Pd.
*2 Reduced by 5.6mW/℃ for each increase in Ta≧25℃ (when mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, 1-layer)
On less than 0.2% (percentage occupied by copper foil.
*3 Reduced by 10.1mW/℃ for each increase in Ta≧25℃ (when mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, 1-layer)
On less than 7.0% (percentage occupied by copper foil.
*4 Reduced by 24.2mW/℃ for each increase in Ta≧25℃ (when mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, 1-layer)
On less than 65.0% (percentage occupied by copper foil.

●Operating Voltage(Ta=25℃)
◎BD3540NUV, BD3541NUV

Parameter Symbol Min. Max. Unit

Input Voltage 1 VCC 3.0 5.5 V

Input Voltage 2 VIN 0.95 VCC-1

Output Voltage IO -

PGOOD Input Voltage V

-0.3 5.5 V

PGOOD

BD3540NUV BD3541NUV

0.5 1.0

*1*5

V

A

Output Voltage Setting Range Vo VFB 2.7 V

Enable Input Voltage Ven 0 5.5 V

*5 VCC and VIN do not have to be implemented in the order listed.
*This product is not designed for use in radioactive environments.

●Attention : About this document
The official specification of this product (BD354XNUV) is the Japanese version.
This translation is intended only as a reference to understand the official version.
If there are any differences between the Japanese and this translated version, the official Japanese version takes priority.

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© 2009 ROHM Co., Ltd. All rights reserved.

2/16

2009.04 - Rev.B

BD3540NUV, BD3541NUV

Technical Note

●Electrical Characteristics
(Unless otherwise specified, Ta=25℃, VCC=5V, Ven=3V, VIN=1.7V, R1=3.9KΩ, R2=3.3KΩ)

Parameter Symbol

Bias Current

VCC Shutdown Mode Current

Output Voltage
Output Voltage Temperature

Coefficient
Feedback Voltage 1

Feedback Voltage 2

Load Regulation

Line Regulation 1

Line Regulation 2

Standby Discharge Current

ICC

IST

VOUT

Tcvo

VFB1

VFB2

Reg.L

Reg.l1

Reg.l2

Iden

Min. Typ. Max.

- 0.7 1.0 mA

- 0 10 μA

- 1.200 - V

- 0.01 - %/℃

0.643 0.650 0.657 V

0.637 0.650 0.663 V

- 0.5 10 mV

- 0.1 0.5 %/V

- 0.1 0.5 %/V

1 - - mA

Limit

Unit Condition

Ven=0V

Tj=-10 to 100℃

(BD3540NUV Io=0A to 0.5A)
(BD3541NUV Io=0A to 1.0A)

VCC=3.0V to 5.5V

VIN=1.5V to 3.3V

Ven=0V, Vo=1V

[ENABLE]
Enable Pin

Input Voltage High
Enable PinInput Voltage Low

Enable Input Bias Current

Enhi

Enlow

Ien

2 - - V

0 - VCC×0.15 V

- 7 10 μA

Ven=3V

[NRCS]

NRCS Charge Current

NRCS Standby Voltage

Inrcs 14 20 26 μA Vnrcs=0.5V

VSTB - 0 50 mV Ven=0V

[UVLO]
VCC Undervoltage Lockout

Threshold Voltage
VCC Undervoltage Lockout
Hysteresis Voltage

VccUVLO 2.3 2.5 2.7 V Vcc:Sweep-up

Vcchys 50 100 150 mV Vcc:Sweep-down

[PGOOD]

Low-side Threshold Voltage V

High-side Threshold Voltage V

PGDLY charge current I

VO×0.87 VO×0.9 VO×0.93 V

THPGL

VO×1.07 VO×1.1 VO×1.13 V

THPGL

1.4 2.0 2.6 μA

PGDLY

Ron RPG 30 75 150 Ω

[AMP]

Io=0.5A, VIN=1.2V,
Ta=-10 to 100℃
Io=1.0A, VIN=1.2V,
Ta=-10 to 100℃

Minimum
dropout voltage

BD3540NUV dVo - 200 300 mV

BD3541NUV dvo - 200 300 mV

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3/16

2009.04 - Rev.B

BD3540NUV, BD3541NUV

v

v

v

v

v

v

v

v

v

v

v

v

v

v

v

v

v

μ

●Reference Data(BD3540NUV)

Technical Note

50mV/di

0.5A/di

50mV/di

0.5A/di

Vo

13mV

Io

Io=0A→1A/μsec t(10μsec/div)

0.5A

Fig.1 Transient Response

(0→0.5A)

Co=100μF, Cfb=1000pF

Vo

13mV

Io

0.5A

Io=1A→0A/μsec t(100μsec/div)

Fig.4 Transient Response

(0.5→0A)

=

Vo

50mV/di

0.5A/di

29mV

Io

Io=0A→1A/μsec t(10μsec/div)

0.5A

Fig.2 Transient Response

(0→0.5A)

50mV/div

0.5A/div

Co=47μF, Cfb=1000pF

Vo

25mV

Io

0.5A

Io=1A→0A/μsec t(100μsec/div)

Fig.5 Transient Response

(0.5→0A)

=

μF, Cfb=1000pF

Co=47

50mV/di

0.5A/di

50mV/div

0.5A/div

Vo

Io

38mV

0.5A

Io=0A→1A/μsec t(10μsec/div)

Fig.3 Transient Response

(0→0.5A)

=

Vo

35mV

0.5A

Io

Io=1A→0A/μsec t(100μsec/div)

=

Fig.6 Transient Response

(0.5→0A)

Co=22μF, Cfb=1000pF

●Reference Data(BD3541NUV)

Vo

50mV/di

Io

1A/di

42mV

1.0A

Fig.7 Transient Response

(0→1.0A)

Co=100μF, Cfb=1000pF

42mV

Vo

50mV/di

Io

1A/di

1.0A

50mV/div

1A/div

50mV/di

1A/di

Vo

Io

1.0A

Fig.8 Transient Response

(0→1.0A)

Co=47

51mV

Vo

Io

F, Cfb=1000pF

1.0A

53mV

50mV/di

1A/di

50mV/di

1A/div

Vo

59mV

Io

1.0A

Fig.9 Transient Response

(0→1.0A)

Co=22μF, Cfb=1000pF

57mV

Vo

Io

1.0A

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© 2009 ROHM Co., Ltd. All rights reserved.

Fig.10 Transient Response

(1.0→0A)

Co=100

μF, Cfb=1000pF

Fig.11 Transient Response

(1.0→0A)

Co=47μF, Cfb=1000pF

4/16

Fig.12 Transient Response

(1.0→0A)

Co=22μF, Cfb=1000pF

2009.04 - Rev.B

BD3540NUV, BD3541NUV

●Reference Data(BD3540NUV)

Technical Note

VCC

VCC

Ven

Ven

VIN

VIN

Fig.19 Waveform at output

Fig.20 Waveform at output OFF

VCC

Ven

VIN

Vo

Fig.21 Input sequence

VCC

Ven

VIN

Vo

VCC

Ven

VIN

Vo

VCC

Ven

VIN

Vo

Fig.22 Input sequence

Fig.23 Input sequence

Fig.24 Input sequence

1.25

VCC

VCC

1.23

Ven

VIN

Vo

Fig.25 Input sequence

VIN→Ven →VCC Ven→VIN→VCC

Ven

VIN

Vo

Fig.26 Input sequence

1.21

Vo(V)

1.19

1.17

1.15

-101030507090
Ta(℃)

Fig.27 Ta-Vo (Io=0mA)

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5/16

2009.04 - Rev.B

BD3540NUV, BD3541NUV

IIN ( u A )

●Reference Data(BD3540NUV)

Technical Note

0.70

0.65

0.60

0.55

0.50

0.45

ICC(mA)

0.40

0.35

0.30

0.25

0.20

-10 10 30 50 70 90
Ta(℃)

Fig.28 Ta-ICC

30

25

20

15

10

5

0

-60 -30 0 30 60 90 120 150

Fig.31 Ta-IINSTB

Ta(℃)

100

100

0.10

0.08

0.06

0.04

ICC(uA)

0.02

0.00

-60 -30 0 30 60 90 120 150
Ta(℃)

Fig.29 Ta-ISTB

25

25

25

24

24

24

23

23

23

22

22

22

21

21

21

20

20

20

19

19

INRCS(uA)

19

INRCS(uA)

INRCS(uA)

18

18

18

17

17

17

16

16

16

15

15

15

-101030507090

-101030507090

-101030507090

Ta(℃)

Ta(℃)

Ta(℃)

Fig.32 Ta-INRCS

100

100

1.70

1.65

1.60

1.55

IIN(mA)

1.50

1.45

1.40

-10 30 70
Ta(℃)

Fig.30 Ta-IIN

20

20

15

15

10

10

5

5

0

0

IFB(nA)

IFB(nA)

-5

-5

-10

-10

-15

-15

-20

-20

-10 10 30 50 70 90

-10 10 30 50 70 90

Ta(℃)

Ta(℃)

Fig.33 Ta-IFB

100

100

100

10

10

9

9

8

8

7

7

6

6

5

5

Ien(uA)

4

Ien(uA)

4

3

3

2

2

1

1

0

0

-101030507090

-101030507090

Ta(℃)

Ta(℃)

Fig.34 Ta-Ien

100

100

180

150

170

170

160
140

160

150

150

130

)

)

)

140

Ω

140

Ω

Ω

120

130

130

RON(m

RON(m

RON(m

120

120

110

110

110

100

100

100

90

90

90

-101030507090

-10 10 30 50 70 90

-1010305070 90

Ta(℃)

Ta(℃)

Ta(℃)

Fig.35 Ta-RON

(VCC=5V/Vo=1.2V)

100

100

200

190

180

)

170

Ω

160

RON(m

150

140

130

120

2468

Vcc(V)

Fig.36 VCC-RON

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6/16

2009.04 - Rev.B