Single channel high side switch IC for USB port is a
high side switch having over current protection used i n
power supply line of universal serial bus (USB).
N-channel power MOSFET of low on resistance and
low supply current are realized in this IC.
And, over current detection circuit, thermal shutdown
circuit, under voltage lockout and soft start circuit are
built in.
●Features
Low on resistance 80mΩ N-ch MOSFET Switch.
Continuous current load 1.0A
Control input logic
¾ Active-Low : BD2061AFJ
¾ Active-High: BD2065AFJ
Soft start circuit
Over current detection
Thermal shutdown
Under voltage lockout
Open drain error flag output
Reverse-current protection when power switch off
TTL Enable input
1.2ms typical rise time
●Applications
USB hub in consumer appliances, Car accessory, PC,
PC peripheral equipment, and so forth
●Ty pical A pplication Circuit
5V(typ.)
C
IN
GND
IN
IN
EN(/EN )
●Lineup
Over current threshold
Min. Typ. Max.
1.1A 1.5A 2.3A Low SOP-J8Reel of 2500 BD2061AFJ – E2
1.1A 1.5A 2.3A High SOP-J8Reel of 2500 BD2065AFJ – E2
●Key Specifications
Input voltage range: 2.7V to 5.5V
ON resistance : 80mΩ(Typ.)
Over current threshold: 1.1A min., 2.3A max.
Standby current: 0.01μA (Typ.)
Operating temperature range: -40℃ to +85℃
●Package W(Typ.) D(Typ.) H (Max.)
SOP-J8 4.90mm x 6.00mm x 1.65mm
OUT
Control input logicPackage Orderable Part Number
OUT
OUT
/OC
+
C
L
-
SOP-J8
VBUS
D+
D-
GND
○Product structure:Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays
www.rohm.com
Power switch output.
When used, connect each pin outside.
2/22
TSZ02201-0E3E0H300150-1-2
11.Mar.2013 Rev.001
BD2061AFJ BD2065AFJ
●Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Supply voltage VIN-0.3 to 6.0 V
Enable voltage VEN, V/EN-0.3 to 6.0 V
/OC voltage V/OC-0.3 to 6.0 V
/OC current IS/OC 10 A
OUT voltage VOUT-0.3 to 6.0 V
Storage temperature TSTG-55 to 150 ℃
Power dissipation PD 560*1 mW
*1 In case Ta = 25℃ is exceeded, 4.48mW should be reduced per 1℃.
●Recommended Operating Range
Parameter Symbol
Ratings
Unit
Operating voltage VIN2.7 to 5.5 V
Operating temperature TOPR-40 to 85 ℃
Continuous output current ILO0 to 1.0 A
●Electrical Characteristics
◎BD2061AFJ (Unless other wise specified, V
Parameter Symbol
IN = 5.0V, Ta = 25℃)
Limits
Min. Typ. Max.
Unit Condition
Operating Current IDD - 90 120 μA V/EN = 0V, OUT = OPEN
Standby Current ISTB - 0.01 1 μA V/EN = 5V, OUT = OPEN
V/EN 2.0 - - V High input
/EN input voltage
V/EN
- - 0.8 V Low input
- - 0.4 V Low input 2.7V≤ VIN ≤4.5V
/EN input current I/EN -1.0 0.01 1.0 μA V/EN = 0V or V/EN = 5V
/OC output LOW voltage V/OC - - 0.5 V I/OC = 5mA
/OC output leak current IL/OC - 0.01 1 μA V/OC = 5V
TD
/OC delay time
- 2.5 8 ms
/OC
ON resistance RON - 80 100 mΩ IOUT = 1.0A
Datasheet
Over-current Threshold ITH 1.1 1.5 2.3 A
Output current at short ISC 1.1 1.5 1.9 A
VIN = 5V, VOUT = 0V,
L = 100μF (RMS)
C
Output rise time TON1 - 1.2 10 ms
Output turn on time TON2 - 1.5 20 ms
Output fall time TOFF1 - 1 20 μs
R
L = 10Ω , CL = OPEN
Output turn off time TOFF2 - 3 40 μs
UVLO threshold
VTUVH 2.1 2.3 2.5 V Increasing VIN
VTUVL 2.0 2.2 2.4 V Decreasing VIN
◎BD2065AFJ (Unless other wise specified, VIN = 5.0V, Ta = 25℃)
Parameter Symbol
Min. Typ. Max.
Limits
Unit Condition
Operating Current IDD - 90 120 μA VEN = 5V, OUT = OPEN
Standby Current I
- 0.01 1 μA VEN = 0V, OUT = OPEN
STB
VEN 2.0 - - V High input
EN input voltage
VEN
- - 0.8 V Low input
- - 0.4 V Low input 2.7V≤ VIN ≤4.5V
EN input current IEN -1.0 0.01 1.0 μA VEN = 0V or VEN = 5V
/OC output LOW voltage V
/OC output leak current IL
/OC delay time TD
- - 0.5 V I/OC = 5mA
/OC
- 0.01 1 μA V/OC = 5V
/OC
- 2.5 8 ms
/OC
ON resistance RON - 80 100 mΩ IOUT = 1.0A
Over-current Threshold ITH 1.1 1.5 2.3 A
IN = 5V, VOUT = 0V,
Output current at short ISC 1.1 1.5 1.9 A
Output rise time T
Output turn on time T
Output fall time T
Output turn off time T
When excessive current flows due to output short-circuit or so, ringing occurs because of inductance between power source
lines to IC, and may cause bad influences on IC operations. In order to avoid this case, connect a bypass capacitor across
IN terminal and GND terminal of IC. 1μF or higher is recommended.
Pull up /OC output by resistance 10kΩ to 100kΩ.
Set up value which satisfies the application as C
This application circuit does not guarantee its operation.
When using the circuit with changes to the external circuit constants, make sure to leave an adequate margin for external
components including AC/DC characteristics as well as dispersion of the IC.
●Functional Description
1. Switch operation
IN terminal and OUT terminal are connected to the drain and the source of switch MOSFET respectively. And the IN
terminal is used also as power source input to internal control circuit.
When the switch is turned on from EN/EN control input, IN terminal and OUT terminal are connected by an 80mΩ switch.
In on status, the switch is bidirectional. Therefore, when the potential of OUT terminal is higher than that of IN terminal,
current flows from OUT terminal to IN terminal.
Since a parasitic diode between the drain and the source of s witch MOSFET is not present in the off status, it is possible
to prevent current from flowing reversely from OUT to IN.
2. Thermal shutdown circuit (TSD)
If over current would continue, the temperature of the IC would increase drastically. If the junction temperature were
beyond 140℃ (typ.) in the condition of over current detection, thermal shutdown circuit operates and makes power
switch turn off and outputs error flag (/OC). Then, when the junction temperature decreases lower than 120℃ (typ.),
power switch is turned on and error flag (/OC) is cancelled. Unless the fact of the increasing chips temperature is
removed or the output of power switch is turned off, this operation repeats.
The thermal shutdown circuit operates when the switch is on (EN,/EN signal is active).
3. Over current detection (OCD)
The over current detection circuit limits current (I
MOSFET exceeds a specified value. There are three types of response against over current. The over current detection
circuit works when the switch is on (EN,/EN signal is active).
L.
) and outputs an error flag (/OC) when current flowing in each switch
3-1. When the switch is turned on while the output is in short-circuit status, the switch goes into current limit status
immediately.
3-2. When the output short-circuits or high-current load is connected while the switch is on, very large current flows until
the over current limit circuit reacts. When the current detection limit circuit works, current limitation is carried out.
3-3. When the output current increases gradually, current limitation does not work until the output current exceeds the
over current detection value. When it exceeds the detection value, current limitation is carried out.
4. Under voltage lockout (UVLO)
UVLO circuit prevents the switch from turning on until the VIN exceeds 2.3V(Typ.). If the VIN drops below 2.2V(Typ.) while
the switch turns on, then UVLO shuts off the power switch. UVLO has hysteresis of 100mV(Typ).
Under voltage lockout circuit works when the switch is on (EN,/EN signal is active).
5. Error flag (/OC) output
Error flag output is N-MOS open drain output. At detection of over current or thermal shutdown, the output level is low.
Over current detection has delay filter. This delay filter prevents instantaneous current detection such as inrush current at
switch on, hot plug from being informed to outside.
/EN
V
V
OUT
Output shortcircuit
Thermal shut down
OUT
I
/OC
V
delay
Figure 38. Over current detection, thermal shutdown timing
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit
between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such as
adding a fuse, in case the IC is operated over the absolute maximum ratings.
(2) Recommended operating conditions
These conditions represent a range within which the expected characte ristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
(3) Reverse connection of power supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
terminals.
(4) Power supply lines
Design the PCB layout pattern to provide low impedance ground and supply lines. Separate the ground and supply lines
of the digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the
analog block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature
and aging on the capacitance value when using electrolytic capacitors.
(5) Ground Voltage
The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no
pins are at a voltage below the ground pin at any time, even during transient condition.
(6) Short between pins and mounting errors
Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong orientation
or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins.
(7) Operation under strong electromagnetic field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
(8) Testing on application boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always
be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent
damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage.
(9) Regarding input pins of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND v oltage to an input pin (and thus to the P substrate) should be
avoided.
When using both small-signal and large-current GND traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the GND traces of external components do not cause variations on th e
GND voltage. The power supply and ground lines must be as short and thick as possible to reduce line impedance.
(11) External Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
(12) Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit, which is designed to turn off the IC when the internal temperature
of the IC reaches a specified value. Do not continue to operate the IC after this function is activated. Do not use the IC in
conditions where this function will always be activated.
(13) Thermal consideration
Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in
actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions (Pc≥Pd).
Package Power dissipation : Pd (W)=(Tjmax-Ta)/θja
Power dissipation : Pc (W )=(Vcc-Vo)×Io+Vcc×Ib
Tjmax : Maximum junction temperature=150℃, Ta : Peripheral temperature[℃] , θja : Thermal resistance of package-ambience[℃/W], Pd : Package Power dissipation [W],
Pc : Power dissipation [W], Vcc : Input Voltage, Vo : Output Voltage, Io : Load, Ib : Bias Current
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