ROHM 2SK3541 Schematic [ru]
2SK3541
Transistor
2.5V Drive Nch MOS FET
2SK3541
zStructure
Silicon N-channel
MOSFET
zApplica tions
Interfacing, switching (30V, 100mA)
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive ( 2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
zPackaging specifications
Type
2SK3541
Package
Code
Basic ordering unit
(pieces)
Taping
T2L
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
Continuous
Pulsed
Symbol Limits Unit
DSS
V
V
GSS
D
1
∗
I
DP
2
∗
P
D
Tch
Tstg °C−55 to +150
30 V
±20
±100I
150
150
Rev.B 1/3
zExternal dimensions (Unit : mm)
VMT3
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
(1)Gate
(2)Source
(3)Drain
0.22
Abbreviated symbol : KN
0.40.4
0.8
0.2
0.5
zEquivalent circuit
Gate
∗ Gate
Protection
Diode
V
mA
mA±400
mW
°C
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
0.13
Drain
Source
Transistor
zElectrical characteristics (Ta=25°C)
t
Symbol
GSS
I
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
R
DS(on)
|Yfs|
C
iss
oss
C
C
rss
d(on)
t
r
t
t
d(off)
f
t
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
zElectrical characteristic curves
Typ. Max. Unit Conditions
Min.
GS
=±20V, VDS=0V
D
=10µA, VGS=0V
I
DS
=30V, VGS=0V
V
DS
=3V, ID=100µA
V
D
=10mA, VGS=4V
I
D
=1mA, VGS=2.5V
I
I
D
=10mA, VDS=3V
V
DS
=5V
V
GS
=0V
f=1MHz
D
=10mA, VDD 5V
I
GS
=5V
V
L
=500Ω
R
R
G
=10Ω
30
0.8
20
−
−
−
−
−
−
−
−
−
−
−
−
±1
−
−
1.0
−
1.5
−
5
8
713
−
−
13
15
35
80
80
−
9
−
4
−
−
−
−
−
µAV
V
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
2SK3541
0.15
0.1
0.05
DRAIN CURRENT : ID (A)
4V
0
012345
DRAIN-SOURCE VOLTAGE : VDS (V)
3.5V
3V
2.5V
2V
V
GS
=
1.5V
Fig.1 Typical output characteristics
50
(Ω)
DS(on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
Fig.4 Static drain-source on-state
Ta=125°C
20
10
0.5
5
2
1
0.001
75°C
25°C
−25°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
resistance vs. drain current (Ι)
Ta=25°C
Pulsed
V
GS
Pulsed
200m
VDS
=3V
100m
Pulsed
50m
(A)
D
20m
10m
5m
2m
1m
0.5m
DRAIN CURRENT : I
0.2m
0.1m
04
1
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical transfer characteristics
=4V
50
Ta=125°C
(Ω)
20
DS(on)
10
5
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
75°C
25°C
−25°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
2
Ta=125°C
75°C
25°C
−25°C
3
V
GS
Pulsed
=2.5V
STATIC DRAIN-SOURCE
2
(V)
GS(th)
1.5
1
0.5
GATE THRESHOLD VOLTAGE : V
0
−25 25 50 75 100 125 150
−50 0
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage vs.
channel temperature
15
(Ω)
DS(on)
10
5
ON-STATE RESISTANCE : R
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
ID=0.1A
ID=0.05A
V
DS
=3V
D
=0.1mA
I
Pulsed
Ta=25°C
Pulsed
Rev.B 2/3
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