ROHM 2SK3065 Datasheet

Transistors

Small switching (60V, 2A)

2SK3065

2SK3065

Features

!

1) Low on resistance.

2) High-speed switching.

3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).

4) Driving circuit is easy.

5) Easy to use parallel.

6) It is strong to an electrostatic discharge.

Structure

!

Silicon N-channel
MOS FET transistor

Absolute maximum ratings

!

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Reverse drain
current

Total power dissipation(Tc=25°C)
Channel temperature
Storage temperature

∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.

Continuous
Pulsed
Continuous
Pulsed

(Ta = 25°C)

Symbol Limits Unit

1

∗

1

60 V

±20

2I

2
8

0.5

∗

2

2

150

DSS

V
V

GSS

D

∗

I

DP

I

DR

I

DRP

P

D

Tch

Tstg °C−55∼+150

External dimensions

!

ROHM
EIAJ : SC-62

: MPT3

Internal equivalent circuit

!

(Units : mm)

0.5±0.1

−0.1

+0.2

+0.5

−0.3

2.5

4.0

0.4±0.1

1.5±0.1

1.0±0.3

Abbreviated symbol : KE

4.5

1.6±0.1

0.5±0.1

3.0±0.2

+0.2

−0.1

1.5±0.1

(3)(2)(1)

0.4±0.1

1.5±0.1

Drain

+0.1

0.4

−0.05

(1) Gate
(2) Drain
(3) Source

V
A
A8
A

Gate

A

W

°C

∗ A protection diode has been built in between the

gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.

∗Gate
Protection
Diode

Source

Electrical characteristics

!

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state

resistance
Forward transfer admittance

Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Pw ≤ 300µs, Duty cycle ≤ 1%

∗

(Ta = 25°C)

Symbol

GSS

I

V

(BR)DSS

I

DSS

V

GS(th)

R

DS(on)

R

DS(on)

Yfs

∗

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Min.

−

60

−

0.8

−

−

1.5

−

−

−

−

−

−

−

Typ.

Max.

±10

−

−−

−

10

−

1.5

0.25

0.32

0.45 I

0.35

−

−

−

160

85

−

25

−

20

−

50

−

120

−

70

−

Unit

µA

µA

Ω
Ω

S
pF
pF
pF

ns

ns

ns

ns

V

V

GS

= ±20V, V

V

D

= 1mA, V

I
V

DS

= 60V, V

V

DS

= 10V, ID = 1mA

I

D

= 1A, V

D

= 1A, V

I

D

= 1A, V

V

DS

= 10V

V

GS

= 0V

= 1MHz

f
I

D

= 1A, V

V

GS

= 4V

R

L

= 30Ω

R

G

= 10Ω

Test Conditions

DS

= 0V

GS

= 0V

GS

= 0V

GS

= 4V

GS

= 2.5V

DS

= 10V

DD

30V

Transistors

Packaging specifications

!

2SK3065

Package
Code

Type

Basic ordering unit
(pieces)

2SK3065

Electrical characteristic curves

!

3

(W)

D

When mounted on a 40 x 40 x 0.7 mm
aluminum-ceramic board.

2

1

TOTAL POWER DISSIPATION : P

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE : Ta(°C)

Fig.1 Total Power Dissipation vs.

Case Temperature

Taping

T100
1000

10

Operating in this
area is limited by

DS(on)

R

1

(A)

D

0.1

0.01

DRAIN CURRENT : I

Ta=25°C
Single Pulsed

0.001

0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS(V)

Pw=10ms

DC OPERATION

Fig.2 Maximum Safe Operating Area

100µs

1ms

2

4V

3.5V
3V

2.5V

1

DRAIN CURRENT : ID(A)

0

0510

DRAIN-SOURCE VOLTAGE : VDS(V)

2V

VGS=1.5V

Ta=25°C
Pulsed

Fig.3 Typical Output Characteristics

10

(A)

D

1

DRAIN CURRENT : I

0.1
054

GATE THRESHOLD VOLTAGE : VGS(th)(V)

Ta=−25°C

25°C
75°C

125°C

321

VDS=10V
Pulsed

Fig.4 Typical Transfer Characteristics

4

(th)(V)

GS

3

2

1

GATE THRESHOLD VOLTAGE : V

0

−50 150100

−25

CHANNEL TEMPERATURE : Tch(°C)

Fig.5 Gate Threshold Voltage vs.

Channel Temperature

10mA

ID=1mA

50250

VDS=10V

75

125

10

Ω)

(on)(

DS

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.1

0.01 10

Fig.6 Static Drain-Source On-

0.1

DRAIN CURRENT : I

State Resistance vs.
Drain Current(Ι

Ta=125°C

−25°C

1

)

75°C
25°C

D

(

A)

V

GS

Pulsed

=4V