ROHM 2SK3019 Schematic [ru]

2SK3019

Transistor

2.5V Drive Nch MOS FET

2SK3019

zStructure

Silicon N-channel
MOSFET

zApplications

Interfacing, switching (30V, 100mA)

zFeatures

1) Low on-resistance.

2) Fast switching speed.

3) Low voltage drive (2.5V) makes t his device ideal for
portable equipment.

4) Drive circuits can be simple.

5) Parallel use is easy.

zPackaging specifications

Type

2SK3019

Package
Code
Basic ordering unit

(pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Continuous

Pulsed
Total power dissipation
Channel temperature
Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.

Symbol Limits Unit

DSS

V
VGSS

IDP

PD

Tch

D

1

∗

2

∗

30 V

±20

±100I

150
150

Tstg °C−55 to +150

zThermal resistance

Parameter

Channel to ambient

∗ With each pin mounted on the recommended lands.

Symbol Limits Unit

Rth(ch-a)

∗

Rev.C 1/3

zDimensions (Unit : mm)

EMT3

0.2

(1)Source
(2)Gate
(3)Drain

V
mA
mA±400

mW

°C

833

°C / W

1.6

0.3

(3)

(2)

(1)

0.5

0.5

1.0

Abbreviated symbol : KN

0.7

0.55

1.6

0.8

0.2

0.15

0.1Min.

zEquivalent circuit

Drain

Gate

∗ Gate

Protection
Diode

∗A pr

otection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.

Source

Transistor

zElectrical characteristics (T a=25°C)

t

Symbol

GSS

I

V

(BR)DSS

I

DSS

V

GS(th)

R

DS(on)

R

DS(on)

|Yfs|

C

iss

oss

C
C

rss

d(on)

t

r

t

t

d(off)

f

t

Parameter

Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

zElectrical characteristic curves

Typ. Max. Unit Conditions

Min.

GS

=±20V, VDS=0V

I

D

=10µA, VGS=0V

DS

=30V, VGS=0V

V

DS

=3V, ID=100µA

V
I

D

=10mA, VGS=4V

D

=1mA, VGS=2.5V

I

D

=10mA, VDS=3V

I
V

DS

=5V

V

GS

=0V
f=1MHz
I

D

=10mA, VDD 5V

V

GS

=5V

L

=500Ω

R
R

G

=10Ω

30

0.8

20

−

−

−

−

−

−

−

−

−

−

−

−

±1

−

−

1.0

−

1.5

−

5

8

713

−

−

13

15
35
80
80

−

9

−

4

−

−

−

−

−

µAV

V

µA

V

Ω

Ω

ms
pF
pF
pF

ns
ns
ns
ns

2SK3019

0.15

0.1

0.05

DRAIN CURRENT : ID (A)

4V

0

012345

DRAIN-SOURCE VOLTAGE : VDS (V)

3V

3.5V

2.5V

2V

VGS=1.5V

Fig.1 Typical output characteristics

50

Ta=125°C

20

DS(on) (Ω)

10

5

2

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.001

Fig.4 Static drain-source on-state

75°C
25°C

−25°C

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)

resistance vs. drain current (Ι)

Ta=25°C
Pulsed

VGS=4V

Pulsed

200m

V

DS

=3V

100m

Pulsed

50m

(A)

D

20m
10m

5m
2m

1m

0.5m

DRAIN CURRENT : I

0.2m

0.1m
04

GATE-SOURCE VOLTAGE : VGS (V)

Ta=125°C

75°C
25°C

−25°C

1

3

2

Fig.2 Typical transfer characteristics

50

Ta=125°C

(Ω)

20

DS(on)

10

5

2

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.001

Fig.5 Static drain-source on-state

75°C
25°C

−25°C

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)

resistance vs. drain current (ΙΙ)

V

GS

Pulsed

=2.5V

2

(V)

GS(th)

1.5

1

0.5

GATE THRESHOLD VOLTAGE : V

0

−50 0

−25 25 50 75 100 125 150

CHANNEL TEMPERATURE : Tch (°C)

Fig.3 Gate threshold voltage vs.

15

(Ω)

DS(on)

10

5

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

0 5 10 15 20

GATE-SOURCE VOLTAGE : VGS (V)

Fig.6 Static drain-source

channel temperature

ID=0.1A

ID=0.05A

on-state resistance vs.
gate-source voltage

V

DS

=3V

D

=0.1mA

I
Pulsed

Ta=25°C
Pulsed

Rev.C 2/3