ROHM 2SK3018 Schematic [ru]
Transistor
2.5V Drive Nch MOS FET
2SK3018
zStructure
Silicon N-channel
MOSFET
zApplica tions
Interfacing, switching (30V, 100mA)
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive ( 2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
zPackaging specifications
Type
2SK3018
Package
Code
Basic ordering unit
(pieces)
Taping
T106
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
1 Pw≤10µs, Duty cycle≤1%
∗
2 With each pin mounted on the recommended lands.
∗
Continuous
Pulsed
Symbol Limits Unit
DSS
V
VGSS
D
1
∗
IDP
2
∗
PD
Tch
Tstg °C−55 to +150
30 V
±20
±100I
200
150
zThermal resistance
Parameter
Channel to ambient
∗ With each pin mounted on the recommended lands.
Symbol Limits Unit
Rth(ch-a)
∗
zExternal dimensions (Unit : mm)
UMT3
(1) Source
(2) Gate
(3) Drain
V
mA
mA±400
mW
°C
625
°C / W
2SK3018
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : KN
zEquivalent circuit
Gate
A protection diode is included between the gate
∗
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
0.9
0.7
0.2
2.1
1.25
0.15
0.1Min.
Each lead has same dimensions
Gate
∗
Protection
Diode
Drain
Source
Rev.B 1/3
Transistor
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
zElectrical characteristic curves
GSS
I
V
(BR)DSS
I
DSS
t
V
GS(th)
R
DS(on)
R
DS(on)
|Y
fs
C
iss
oss
C
C
rss
t
d(on)
r
t
d(off)
t
f
t
Typ. Max. Unit Conditions
Min.
−
−
30
0.8
−
−
−
−
5
−
− 713
|
20
−
13
−
9
−
4
−
− 15 − ID = 10mA, VDD 5Vns
− 35 − VGS = 5Vns
− 80 − RL = 500Ωns
− 80 − RG = 10Ωns
±1
1.5
−
1
8
−
−
−
−
GS
µAV
V
I
D
= 10µA, VGS = 0V
µA
V
DS
V
DS
V
Ω
I
D
= 10mA, VGS = 4V
Ω
I
D
= 1mA, VGS = 2.5V
mS
DS
V
pF
V
DS
pF
GS
V
pF
f = 1MHz
2SK3018
= ±20V, VDS = 0V
= 30V, VGS = 0V
= 3V, ID = 100µA
= 3V, ID = 10mA
= 5V
= 0V
0.15
(A)
D
0.1
0.05
DRAIN CURRENT : I
4V
0
012345
DRAIN-SOURCE VOLTAGE : VDS (V)
3.5V
3V
2.5V
2V
VGS=1.5V
Ta=25°C
Pulsed
Fig.1 Typical output characteristics
50
Ta=125
20
(on) (Ω)
DS
10
5
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
Fig.4 Static drain-source on-state
resistance vs. drain current ( Ι )
°C
75
°C
25
°C
−25
°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
V
Pulsed
200m
VDS
=3V
100m
Pulsed
50m
(A)
D
20m
10m
5m
2m
1m
0.5m
DRAIN CURRENT : I
0.2m
0.1m
04
1
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical transfer characteristics
50
GS
=4V
(Ω)
(on)
DS
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
Fig.5 Static drain-source on-state
Ta=125°C
20
10
5
2
1
0.5
0.001
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
resistance vs. drain current (ΙΙ)
75°C
25°C
−25°C
Ta=125°C
75°C
25°C
−25°C
2
3
V
GS
Pulsed
=2.5V
2
(V)
GS(th)
1.5
1
0.5
GATE THRESHOLD VOLTAGE : V
0
−25 25 50 75 100 125 150
−50 0
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage vs.
channel temperature
15
(on) (Ω)
DS
10
5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
ID=0.1A
ID=0.05A
VDS
D
=0.1mA
I
Pulsed
Ta=25°C
Pulsed
=3V
Rev.B 2/3
Loading...