2SK2504
Transistors
4V Drive Nch MOS FET
2SK2504
zStructure zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy .
zApplications
Switching
zPackaging specifications
Package
Code
Type
Basic ordering unit (pieces)
2SK2504
zInner circuit
Taping
TL
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation(Tc=25
Channel temperature
Storage temperature
Pw ≤ 10µs, Duty cycle ≤ 1%
∗
Symbol Limits Unit
100 V
±
20
20
150
−55 to +150
°C
V
DSS
V
GSS
D
∗
I
DP
I
DR
∗
I
DRP
P
)
D
Tch
Tstg
20
5I
5
CPT3
(1)Gate
(2)Drain
(3)Source
(1) Gate
(2) Drain
(3) Source
V
A
A20
A
A
W
°C
°C
0.75
Abbreviated symbol : K2504
(1)
6.5
5.1
0.9
0.9
(1)
(2)
0.65
2.3
2.3
(3)
(2)
2.3
0.5
1.5
5.5
(3)
1.5
2.5
0.8Min.
0.5
1.0
9.5
Rev.A 1/5
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Pw ≤ 300µs, Duty cycle ≤ 1%
∗
Symbol
I
V
(BR)DSS
I
V
R
C
C
t
t
GSS
DSS
GS(th)
DS(on)
Y
fs
C
iss
oss
rss
d(on)
r
t
d(off)
f
t
Min.
Typ. Max. Unit Test Conditions
±
−
100
−
1.0
−
0.18
100
−
−
−
10
−
2.5
−
0.22
− 0.25 0.28 I
∗
4.0
−
520
−
175
−
60
−
−
−
−
−
− 5.0 − ID=2.5A, VDD=50Vns
− 20 − VGS=10Vns
− 50 − RL=20Ωns
− 20 − RG=10Ωns
nA V
V
µA
V
Ω
S
pF
pF
pF
GS
=
±
20V, VDS=0V
D
=1mA, VGS=0V
I
DS
=100V, VGS=0V
V
V
DS
=10V, ID=1mA
D
=2.5A, VGS=10V
I
D
=2.5A, VGS=4V
I
D
=2.5A, VDS=10V
V
DS
=10V
GS
=0V
V
f=1MHz
2SK2504
Rev.A 2/5
Transistors
zElectrical characteristics curve
50
s
(A)
D
10
5
1
DRAIN CURRENT : I
0.5
0.1
1 20010050510
DS(on)
Operation in this area
is limited by R
Tc
=
25°C
Single pulse
DRAIN-SOURCE VOLTAGE : V
Fig.1 Maximum Safe Operating Area
4.0
(V)
3.5
GS(th)
3.0
2.5
2.0
1.5
1.0
0.5
GATE THRESHOLD VOLTAGE : V
0
−25 50 75 100 125
−50 25
0 150
CHANNEL TEMPERATURE : T
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
0.6
(Ω)
DS(on)
0.4
0.2
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0
5
GATE-SOURCE VOLTAGE : V
Fig.7
Static Drain-Source On-State Resistance
vs. Gate-Source Voltage
100µ
P
W
=
10ms
DC Operation
lD=5A
2.5A
10 15
1ms
DS
V
=
DS
lD=1mA
ch
(°C)
Ta=25°C
Pulsed
GS
(V)
10V
(V)
10
10V
9
8V
6V
8
(A)
D
DRAIN CURRENT : I
5V
7
6
5
4
3
2
1
0
0
DRAIN-SOURCE VOLTAGE : V
Fig.2 Typical Output Characteristics
10
V
=
10V
GS
Pulsed
(Ω)
DS(on)
1
0.1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.01
0.01 100.1
Fig.5
Static Drain-Source On-State Resistance
vs. Drain Current ( Ι )
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : I
1
0.6
(Ω)
0.5
DS(on)
0.4
0.3
0.2
0.1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
20
0
Fig.8
Static Drain-Source On-State Resistance
vs. Channel Temperature
ID=5A
2.5A
−25−50 25 500 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
VGS=3V
(A)
D
Ta=25
Pulsed
4V
DS
V
GS
Pulsed
10
V
°C
54321
(V)
=
DS
Pulsed
5
2
(A)
D
1
0.5
0.2
0.1
0.05
DRAIN CURRENT : I
0.02
0.01
GATE-SOURCE VOLTAGE : V
Fig.3 Typical Transfer Characteristics
10
V
=
GS
Pulsed
5
(Ω)
2
DS(on)
1
0.5
0.2
0.1
0.05
0.01
ON-STATE RESISTANCE : R
STATIC DRAIN-SOURCE
0.01
0.01 5.0 100.05 0.1 0.5
0.02 1.0 2.0
Fig.6
Static Drain-Source On-State Resistance
vs. Drain Current ( ΙΙ )
100
V
=
=
10V
DS
(S)
Pulsed
50
fS
20
10
5
2
1
0.5
0.2
0.1
FORWARD TRANSFER ADMITTANCE : Y
Fig.9 Forward Transfer Admittance
vs. Drain Current
2SK2504
10V
Ta=125°C
75°C
25°C
−25°C
201 3456
4V
Ta=125°C
75°C
25°C
−25°C
0.2
DRAIN CURRENT : I
10V
= −
Ta
25°C
25°C
75°C
125°C
0.1 0.2 0.50.01 0.02 0.05
DRAIN CURRENT : I
1 2.0 5.0
(V)
GS
(A)
D
10
(A)
D
Rev.A 3/5
Transistors
10
VGS=0V
(A)
Pulsed
5
DR
Ta=125°C
75°C
2
25°C
−25°C
1
0.5
0.2
0.1
REVERSE DRAIN CURRENT : I
0.05
0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
Fig.10 Reverse Drain Current
vs. Source-Drain Voltage ( Ι )
1000
500
200
(ns)
100
50
20
10
SWITCHING TIME : t
5
2
0.10.05 0.2 0.5 1 2 5 10
DRAIN CURRENT : I
td(off)
tf
tr
td(on)
D
(A)
Fig.13 Switching characteristics
(See Figures 16 and 17 for
the measurement circuit and
resultant waveforms)
10
(V)
SD
Ta=25°C
DD
=30V
V
GS
=10V
V
G
=10Ω
R
Pulsed
5
(A)
DR
0.5
0.1
0.05
REVERSE DRAIN CURRENT : I
0.01
VGS=10V 0V
1
0 1.0 1.5
0.5
SOURCE-DRAIN VOLTAGE : V
Fig.11 Reverse Drain Current
vs. Source-Drain Voltage ( ΙΙ )
1000
Ta=25°C
di/dt=100A/µs
500
GS
=0V
V
Pulsed
100
50
REVERSE RECOVERY TIME : trr (ns)
10
0.2 0.5
0.1
REVERSE DRAIN CURRENT : I
Fig.14 Reverse Recovery Time
vs. Reverse Drain Current
Ta=25°C
Pulsed
(V)
SD
12 51
0
DR
(A)
2SK2504
10000
(pF)
1000
100
CAPACITANCE : C
10
0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
Fig.12 Typical Capacitance
vs. Drain-Source Voltage
T
V
C
iss
C
oss
C
rss
a
=
25
=
0V
GS
f=1MHz
(V)
DS
°C
( t )
D=1
: r
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
NORMALIZED TRANSIENT
0.01
THERMAL RESISTANCE
Single pulse
0.001
10µ
100
µ 1m 10m
PULSE WIDTH : PW
Tc=25°C
(t)=r (t) θ
θ
th(ch-c)
θ
=
6.25
th(ch-c)
PW
100
m 1 10
(s)
th(ch-c)
°C/W
PW
D=
T
T
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
Rev.A 4/5
Transistors
zSwitching characteristics measurement circuit
2SK2504
Pulse Width
V
GS
R
G
D.U.T.
I
D
R
V
Fig.16 Switching Time Test Circuit
L
DD
V
DS
V
GS
V
DS
50%
10%
10%
90%
t
t
d(on)
r
t
on
Fig.17 Switching Time Waveforms
90%
t
d(off)
50%
10%
90%
t
f
t
off
Rev.A 5/5
Appendix
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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