ROHM 2SK2504 Schematic [ru]
2SK2504
Transistors
4V Drive Nch MOS FET
2SK2504
zStructure zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy .
zApplications
Switching
zPackaging specifications
Package
Code
Type
Basic ordering unit (pieces)
2SK2504
zInner circuit
Taping
TL
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation(Tc=25
Channel temperature
Storage temperature
Pw ≤ 10µs, Duty cycle ≤ 1%
∗
Symbol Limits Unit
100 V
±
20
20
150
−55 to +150
°C
V
DSS
V
GSS
D
∗
I
DP
I
DR
∗
I
DRP
P
)
D
Tch
Tstg
20
5I
5
CPT3
(1)Gate
(2)Drain
(3)Source
(1) Gate
(2) Drain
(3) Source
V
A
A20
A
A
W
°C
°C
0.75
Abbreviated symbol : K2504
(1)
6.5
5.1
0.9
0.9
(1)
(2)
0.65
2.3
2.3
(3)
(2)
2.3
0.5
1.5
5.5
(3)
1.5
2.5
0.8Min.
0.5
1.0
9.5
Rev.A 1/5
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Pw ≤ 300µs, Duty cycle ≤ 1%
∗
Symbol
I
V
(BR)DSS
I
V
R
C
C
t
t
GSS
DSS
GS(th)
DS(on)
Y
fs
C
iss
oss
rss
d(on)
r
t
d(off)
f
t
Min.
Typ. Max. Unit Test Conditions
±
−
100
−
1.0
−
0.18
100
−
−
−
10
−
2.5
−
0.22
− 0.25 0.28 I
∗
4.0
−
520
−
175
−
60
−
−
−
−
−
− 5.0 − ID=2.5A, VDD=50Vns
− 20 − VGS=10Vns
− 50 − RL=20Ωns
− 20 − RG=10Ωns
nA V
V
µA
V
Ω
S
pF
pF
pF
GS
=
±
20V, VDS=0V
D
=1mA, VGS=0V
I
DS
=100V, VGS=0V
V
V
DS
=10V, ID=1mA
D
=2.5A, VGS=10V
I
D
=2.5A, VGS=4V
I
D
=2.5A, VDS=10V
V
DS
=10V
GS
=0V
V
f=1MHz
2SK2504
Rev.A 2/5
Transistors
zElectrical characteristics curve
50
s
(A)
D
10
5
1
DRAIN CURRENT : I
0.5
0.1
1 20010050510
DS(on)
Operation in this area
is limited by R
Tc
=
25°C
Single pulse
DRAIN-SOURCE VOLTAGE : V
Fig.1 Maximum Safe Operating Area
4.0
(V)
3.5
GS(th)
3.0
2.5
2.0
1.5
1.0
0.5
GATE THRESHOLD VOLTAGE : V
0
−25 50 75 100 125
−50 25
0 150
CHANNEL TEMPERATURE : T
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
0.6
(Ω)
DS(on)
0.4
0.2
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0
5
GATE-SOURCE VOLTAGE : V
Fig.7
Static Drain-Source On-State Resistance
vs. Gate-Source Voltage
100µ
P
W
=
10ms
DC Operation
lD=5A
2.5A
10 15
1ms
DS
V
=
DS
lD=1mA
ch
(°C)
Ta=25°C
Pulsed
GS
(V)
10V
(V)
10
10V
9
8V
6V
8
(A)
D
DRAIN CURRENT : I
5V
7
6
5
4
3
2
1
0
0
DRAIN-SOURCE VOLTAGE : V
Fig.2 Typical Output Characteristics
10
V
=
10V
GS
Pulsed
(Ω)
DS(on)
1
0.1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.01
0.01 100.1
Fig.5
Static Drain-Source On-State Resistance
vs. Drain Current ( Ι )
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : I
1
0.6
(Ω)
0.5
DS(on)
0.4
0.3
0.2
0.1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
20
0
Fig.8
Static Drain-Source On-State Resistance
vs. Channel Temperature
ID=5A
2.5A
−25−50 25 500 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
VGS=3V
(A)
D
Ta=25
Pulsed
4V
DS
V
GS
Pulsed
10
V
°C
54321
(V)
=
DS
Pulsed
5
2
(A)
D
1
0.5
0.2
0.1
0.05
DRAIN CURRENT : I
0.02
0.01
GATE-SOURCE VOLTAGE : V
Fig.3 Typical Transfer Characteristics
10
V
=
GS
Pulsed
5
(Ω)
2
DS(on)
1
0.5
0.2
0.1
0.05
0.01
ON-STATE RESISTANCE : R
STATIC DRAIN-SOURCE
0.01
0.01 5.0 100.05 0.1 0.5
0.02 1.0 2.0
Fig.6
Static Drain-Source On-State Resistance
vs. Drain Current ( ΙΙ )
100
V
=
=
10V
DS
(S)
Pulsed
50
fS
20
10
5
2
1
0.5
0.2
0.1
FORWARD TRANSFER ADMITTANCE : Y
Fig.9 Forward Transfer Admittance
vs. Drain Current
2SK2504
10V
Ta=125°C
75°C
25°C
−25°C
201 3456
4V
Ta=125°C
75°C
25°C
−25°C
0.2
DRAIN CURRENT : I
10V
= −
Ta
25°C
25°C
75°C
125°C
0.1 0.2 0.50.01 0.02 0.05
DRAIN CURRENT : I
1 2.0 5.0
(V)
GS
(A)
D
10
(A)
D
Rev.A 3/5
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