ROHM 2SK2094 Schematic [ru]
2SK2094
g
Transistors
4V Drive Nch MOS FET
2SK2094
zStructure zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy .
zApplications
Switching
zPackaging specifications
CPT3
(1)Gate
(2)Drain
(3)Source
zInner circuit
6.5
5.1
0.75
0.9
2.3
(1)
(2)
Abbreviated symbol : K2094
2.3
0.5
1.5
5.5
0.9
0.65
2.3
(3)
1.5
2.5
0.8Min.
0.5
1.0
9.5
Type
2SK2094
Package
Code
Basic ordering unit
(pieces)
Tapin
TL
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation(Tc=25
Channel temperature
Storage temperature
Pw ≤ 300µs, Duty cycle ≤ 2%
∗
Symbol Limits Unit
V
DSS
V
GSS
I
DP
I
DR
I
DRP
°C
)
P
Tch
Tstg
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
60 V
±
20
D
2I
∗
2
∗
D
8
10
150
−55 to +150
V
A
A8
A
A
W
°C
°C
Rev.A 1/4
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time (Body Diode)
V
t
V
R
GSS
I
(BR)DSS
I
DSS
GS(th)
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
d(on)
r
t
d(off)
t
t
f
rr
t
Typ. Max. Unit Test Conditions
Min.
100
−
100
2.5
−
−
−
−
nA V
V
µA
V
Ω
S
pF
pF
pF
GS
= ±20V, V
I
D
=1mA, VGS=0V
V
DS
=60V, VGS=0V
V
DS
=10V, ID=1mA
I
D
=1A, VGS=10V
I
D
=1A, VGS=4V
DS
=10V, ID=1A
V
V
DS
=10V
GS
=0V
V
f=1MHz
±
−
−
60
1.0
−
−
−
−
0.3
−
− 0.4 0.5
1.0
−
400
−
150
−
50
−
0.35
− 10 − ID=1A, VDD=30Vns
− 20 − VGS=10Vns
− 100 − RL=30Ωns
− 40 − RG=10Ωns
− 100 − IDR=2A, VGS=0V, di/dt=50A/µsns
2SK2094
DS
=0V
Rev.A 2/4
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