ROHM 2SD2704K, 2SD2705S Schematic [ru]
2SD2704K / 2SD2705S
Transistors
For Muting (20V, 0.3A)
2SD2704K / 2SD2705S
zFeatures zExternal dimensions (Unit : mm)
1) High DC current gain.
h
FE
= 820 to 2700
2) High emitter-base voltage.
V
EBO
= 25V (Min.)
3) Low Ron
Ron= 0.7Ω (Typ.)
zStructure
Epitaxial planar type
NPN silicon transistor
zPackaging specifications
Package
Code T146 TP
Type
2SD2704K
2SD2705S
Basic ordering
unit (pieces)
Taping
3000 5000
−
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD2704K
2SD2705S
Junction temperature
Storage temperature
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
−
50 V
20
25
0.3
0.2
0.3
150
−55 to +150
2SD2704K
ROHM : SMT3
EIAJ : SC-59
2SD2705S
ROHM : SPT
EIAJ : SC-72
V
V
A
W
°C
°C
2.9
0.4
(3)
1.6
2.8
(2)
(1)
0.95 0.95
1.9
Abbreviated symbol : XL
4.0 2.0
3.0
(15Min.)
5.0
(1) (2) (3)
2.5
0.15
3Min.
0.45
0.5
1.1
0.8
(1) Emitter
(2) Base
0.3Min.
(3) Collector
Each lead has same dimensions
0.45
(1) Emitter
(2) Collector
(3) Base
Rev.A 1/4
Transistors
.2
n
n
.2
0
0
)
e
e
)
2SD2704K / 2SD2705S
zElectrical characteristics (T a=25°C)
Min.
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current
∗
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
Cob
Ron
∗
Typ. Max. Unit Conditions
50
20
25
−
−
−
820
−
−
−
50
35
3.9
0.7
−
−
−
0.1
−
0.1
−
100
2700
−
V
−
V
−
V
−
µA
µA
mV
MHz
−
pF
−
Ω
− I
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
V
EB
I
C/IB
CE
V
CE
V
V
CB
B
=5mA, Vi=100mV(rms), f=1kHz
=50V
=25V
=30mA/3mA
=2V, IC=4mA−
=6V, IE= −4mA, f=10MHz
=10V, IE=0A, f=1MHz
zElectrical characteristic curves
1000
(mA)
C
100
10
0.1
COLLECTOR CURRENT : I
0.1
0 0.2 0.4 0.6 0.8 1 1
BASE TO EMITTER VOLTAGE : V
Ta=125°C
25°C
V
−40°C
BE(ON)
Fig.1 Grounded emitter propagatio
characteristics ( Ι )
CE
=
(V)
1000
2V
(mA)
C
COLLECTOR CURRENT : I
100
10
0.1
0.1
0 0.2 0.4 0.6 0.8 1 1
BASE TO EMITTER VOLTAGE : V
Ta=125°C
25°C
−40°C
BE(ON)
V
CE
=
Fig.2 Grounded emitter propagatio
characteristics (
ΙΙ
)
6V
(V)
10000
Ta=125°C
FE
1000
Ta=25°C
Ta= −40°C
100
DC CURRENT GAIN : h
10
1 10 100 100
COLLECTOR CURRENT : I
Fig.3 DC current gain
vs. collector current ( )
C
(mA)
VCE=2V
10000
FE
1000
100
DC CURRENT GAIN : h
10
1 10 100 100
Fig.4 DC current gain
vs. collector current ( )
Ta=125°C
Ta=25°C
Ta
= −
40°C
COLLECTOR CURRENT : I
C
VCE=6V
(mA)
10000
(mV
CE(sat)
1000
100
10
COLLECTOR SATURATION VOLTAGE : V
Ta=125°C
Ta=25°C
Ta
= −
40°C
1
1 10 100 1000
COLLECTOR CURRENT : I
Fig.5 Collector-emitter saturation voltag
vs. collector current ( )
IC/IB=10/1
C
(mA)
10000
(mV
CE(sat)
1000
Ta=125°C
100
10
1
COLLECTOR SATURATION VOLTAGE : V
1 10 100 1000
COLLECTOR CURRENT : I
Ta=25°C
Ta
= −
40°C
IC/IB=20/1
C
(mA)
Fig.6 Collector-emitter saturation voltag
vs. collector current ( )
Rev.A 2/4
Loading...