ROHM 2SD2703 Technical data

2SD2703

Transistors

General purpose amplification (30V, 1A)

2SD2703

zApplication

Low frequency amplifier

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE(sat) ≦ 350mV

C = 500mA / IB = 25mA

At I

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperature

Single pulse, PW=1ms

∗

1

Mounted on a 25

∗

2

t

×25×

0.8mm Ceramic substrate

VCBO V

CEO V

V
V

EBO V

I

C A

CP A

I
P

C W

Tj

Tstg

Limits

−55 to +150 °C

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

BV
BV
BV

V

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

FE

h

f

T

Cob

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

30
30

0.4

0.8

150

6
1
2

∗

2

°C

30

−−

30

−−

6

−−

−−

−−

120 350 mV

−

270

−

320

−

7

−

zDimensions (Unit : mm)

ROHM : TUMT3

zPackaging specifications

Type

2SD2703

1

∗

V

I

C

=10µA

V

IC=1mA

V

E

=10µA

I
100 nA
100 nA

680

−

−

VCB=30V

EB

V

IC/IB=500mA/25mA

− V

CE/IC

MHz

VCE=2V, IE=−100mA, f=100MHz

pF

VCB=10V, IE=0A, f=1MHz

Abbreviated symbol : EU

Package
Code
Basic ordering unit (pieces)

=6V

=2V/100mA

0.2Max.

∗

∗

(1) Base
(2) Emitter
(3) Collector

Taping

TL

3000

Rev.B 1/2

2SD2703

Transistors

zElectrical characteristic curves

1000

FE

Ta=25°C

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1
COLLECTOR CURRENT : I

Ta=100°C

Ta=−40°C

Fig.1 DC current gain

vs. collector current

1

(A)

C

0.1

Ta=100°C

0.01

Ta=25°C

Ta=−40°C

VCE=2V
Pulsed

C

(A)

VCE=2V
Pulsed

10

(V)

(V)

CE (sat)

BE (sat)

BASE SATURATION VOLTAGE : V

Ta=−40°C
Ta=100°C

1

0.1

0.01

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

V

Ta=25°C

V

COLLECTOR CURRENT : I

BE(sat)

CE(sat)

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

Ta=100°C

IC/IB=20/1

IC/IB=20

Pulsed

Pulsed

Ta=25°C

Ta=−40°C

C

10

(V)

CE(sat)

1

0.1

0.01

0.001

(A)

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

IC/IB=50/1

IC/IB=20/1

IC/IB=10/1

COLLECTOR CURRENT : I

Ta=25°C
V

CE

=2V

C

(A)

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

tdon

100

tr

10

tf

tstg

COLLECTOR CURRENT : I

0.001
0

BASE TO EMITTER VOLTAGE : V

Fig.4 Grounded emitter propagation

characteristics

100

Cib

Cob

10

1

0.01 0.1 1 10 100

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

1.51.00.5

BE

(V)

IC=0A
f=1MHz
Ta=25°C

EB

CB

TRANSITION FREQUENCY : f

10

0.01 0.1 1

(V)

(V)

VCE=2V
Ta=25°C
f=100MHz

EMITTER CURRENT : I

E

(A)

Fig.5 Gain bandwidth product

vs. emitter current

SWITCHING TIME : (ns)

Ta=25°C
V

CE

=5V

C/IB

=20/1

I

1

0.01 0.1 1
COLLECTOR CURRENT : I

Fig.6 Switching time

C

(A)

Rev.B 2/2