ROHM 2SD2701 Technical data

2SD2701

Transistors

Low frequency amplifier

2SD2701

zApplication

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

CE(sat) ≦ 350mV

C = 1A / IB = 50mA

At I

zAbsolute maximum ratings (Ta=25°C)

C

Limits

15
12

6
2
4

0.4

∗2

0.8

150

−55 to +150

Parameter Symbol

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1 Single pulse, PW=1ms
∗2 Mounted on a 25

t

×25×

0.8mm Ceramic substrate

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

CBO

BV

CEO

BV

EBO

BV

CBO

I

EBO

I

V

CE(sat)

FE

h

T

f

Cob − 11 −

30
30

270 − 680

Rev.B 1/2

zDimensions (Unit : mm)

ROHM : TUMT3 Abbreviated symbol : FZ

zPackaging specifications

Unit

°C
°C

V
V
V
A

∗1

A

W

Type

2SD2701

−−

−−

6

−−

−−

− 140

−

−−

100
100
350 mV

300

−

Package
Code
Basic ordering unit (pieces)

V

I

C

=10µA

V

I

C

=1mA

V

I

E

=10µA
nA VCB=30V
nA VEB=6V

IC=1A, IB=50mA

CE

− V

MHz

pF

=2V, IC=100mA
VCE=2V, IE=−100mA, f=100MHz
V

CB

=10V, IE=0A, f=1MHz

0.2Max.

(1) Base
(2) Emitter
(3) Collector

Taping

∗

TL

3000

∗

2SD2701

Transistors

zElectrical characteristic curves

1000

FE

Ta=100°C

Ta=25°C

Ta=−40°C

VCE=2V
Pulsed

10

(V)

BE (sat)

(V)

CE (sat)

Ta=−40°C

BE(sat)

Ta=25°C

Ta=100°C

V

1

IC/IB=20/1

IC/IB=20
Pulsed

Pulsed

1

Ta=25°C

(V)

Pulsed

CE(sat)

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

C

Fig.1 DC current gain

vs. collector current

1

VCE=2V
Pulsed

(A)

C

COLLECTOR CURRENT : I

0.001

Ta=100°C

0.1

0.01

0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

Ta=25°C

Ta=−40°C

Fig.4 Grounded emitter propagation

characteristics

1000

100

Cib

(A)

BE

Ta=25°C

I

f=1MHz

0.1

0.1
V

CE(sat)

0.01

0.001 0.01 0.1 101

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Ta=100°C

Ta=−40°C

Ta=25°C

C

(A)

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage

IC/IB=50/1

IC/IB=20/1

0.01

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

IC/IB=10/1

C

(A)

Fig.3 Collector-emitter saturation voltage

vs. collector current

vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1 10

(V)

EMITTER CURRENT : I

Ta=25°C
V

CE

=2V

f=100MHz

E

(A)

Fig.5 Gain bandwidth product

1000

100

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.6 Switching time

tstg

Ta=25°C

VCE=5V
f=100MHz

tf

tdon

tr

C

(A)

vs. emitter current

C

=

0A

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

Cob

1 10 1000.1

EB

V)

(

CB

V)

(

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.B 2/2