ROHM 2SD2679 Schematic [ru]

Transistors

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2A / 30V Bipolar transistor

2SD2679

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Applications!!!!!!!!!!!!!!!!!! zDimensions (Unit : mm)

Low frequency amplification, driver

Features

1) Collector current is high.

2) Low collector-emitter saturation voltage.
(V

CE(sat) d 350mV at IC= 1.5A, IB= 75mA)

Structure

NPN epitaxial planar si licon transistor

MPT3

(1)Base
(2)Collector
(3)Emitter

Abbreviated symbol : XZ

2SD2679

Absolute maximum ratings (T a=25qC)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

DC

Pulse
Power dissipation
Junction temperature

Storage temperature

∗1 Pw=1ms, single pulse.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.

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Electrical characteristics (Ta=25qC)

Parameter Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

Pulsed

Symbol

CBO

V
V

CEO

V

EBO

I

C

CP

I

C

P

tj

tstg

Limits

150

−55 to +150

Symbol

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

Cob

30
30

6
2
4

0.5
2



∗1
∗2

∗3

Min.

30
30

6

−

−

−

270

−

−

Unit

V
V
V

A

W

°C
°C

Typ.

−

−

−

−

−

180

−

280

20

Max.

−

−

−

100
100
370
680

−

−

Packaging specifications

Package MPT3
Packaging type

Code
Part No.
2SD2679

Unit

V

nA

mV

−

MHz

pF

C

=1mA

I

C

=10μA

I

E

=10μA

I

CB

V
V

EB

I

C/IB

CE

V

CE

V

CB

V

Basic ordering unit (pieces)

=30V
=6V

=1.5A/75mA
=2V, IC=200mA
=2V, IE= −200mA , f=100MHz
=10V , IE=0mA , f=1MHz

Taping

T100
1000

Rev.A 1/2

Transistors

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Electrical characteristics curves

10

VCE=−2V
Pulsed

(A)

C

1

Ta=125 C

Ta=25 C

0.1

0.01

Ta=−25 C

COLLECTOR CURRENT : I

0.001

01.4

0.2

0.6 0.8

0.4

1.2

1

BASE TO EMITTER CURRENT : VBE (V)

Fig.1 Grounded emitter propagation
characteristics

1000

Ta=125 C

FE

100

Ta=25 C
Ta=−25 C

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC(A)

Fig.2 DC current gain
vs. collector current

VCE=−2V
Pulsed

2SD2679

10

(V)

IC/IB=20/1

Pulsed

CE(sat)

1

Ta=−25 C
Ta=25 C

0.1

0.01

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

Fig.3 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current

Ta=125 C

10

COLLECTOR CURRENT : IC (A)

10

(V)

BE(sat)

IC/IB=20/1
Pulsed

Ta=−25 C

Ta=25 C

1

0.1

BASE SATURATION VOLTAGE : V

0.001 0.01 0.1 1 10

Ta=125 C

COLLECTOR CURRENT : IC (A)

Fig.4 Base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1 10

EMITTER CURRENT : IE (A)

Fig.5 Gain bandwidth product
vs. emitter current

Ta=25 C

CE

=−2V

V
f= 100MHz

1000

Cob

100

IC=0A
f=1MHz

Ta=25 C

Cib

10

0.001 0.01 0.1 1 10 100

EMITTER INPUT CAPACITANCE : Cib (pF)

COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EB

(V)

Fig.6 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.A 2/2