ROHM 2SD2678 Schematic [ru]

2SD2678

Transistors

3A / 12V Bipolar transistor

2SD2678

zApplications zDimensions (Unit : mm)
Low frequency amplification, driver

zFeatures

1) Collector current is high.

2) Low collector-emitter saturation voltage.
(V

CE(sat) ≤ 250mV at IC = 1.5A, IB = 30mA)

zStructure

NPN epitaxial planar si licon transistor

zAbsolute maximum ratings (Ta=25°C) zPackaging specifications

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

DC

Pulse
Power dissipation
Junction temperature

Storage temperature

∗1 Pw=1ms, Pulsed.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.

Symbol

CBO

V
V

CEO

V

EBO

I

C

CP

I

C

P

tj

tstg

Limits

15
12

6
3

∗1

6

0.5

∗2
∗3

2

150

−55 to +150

Unit

V
V
V

A

W

°C
°C

zElectrical characteristics (T a=25°C)

Parameter Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Symbol

BV

CEO
CBO

BV
BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

Cob

Min.

Typ.

Max.

12

−

−

15

−

−

6

−

−

−

−

100

−

−

100

−

120

250

∗

270

∗

−

−

−

360

20

680

−

−

Part No.
2SD2678

Unit

V

nA

mV

−

MHz

pF

MPT3

(1)Base
(2)Collector
(3)Emitter

Abbreviated symbol : XX

Package MPT3
Packaging type
Code
Basic ordering unit (pieces)

C

=1mA

I

C

=10µA

I
I

E

=10µA

CB

=15V

V
V

EB

=6V

I

C/IB

=1.5A/30mA

CE

=2V, IC=500mA

V

CE

=2V, IE= −500mA , f=100MHz

V

CB

=10V , IE=0mA , f=1MHz

V

Taping

T100
1000

Rev.A 1/2

Transistors

zElectrical characteristics curves

10

(A)

C

Ta=100 C

1

Ta=25 C

Ta=−45 C

0.1

0.01

COLLECTOR CURRENT :I

0.001

0.1 1 10

BASE TO EMITTER CURRENT : VBE (V)

Fig.1 Grounded emitter propagation
characteristics

10

(V)

BE(sat)

IC/IB=20/1
Pulsed

Ta=25 C
Pulsed

1000

Ta=100 C

FE

Ta=25 C

VCE=−2V
Pulsed

Ta=40 C

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

Fig.2 DC current gain
vs. collector current

1000

Ta=25 C
V
f= 100MHz

CE=−2V

2SD2678

10

IC/IB=20/1

CE

=2V

V

(V)

Pulsed

CE(sat)

1

Ta=100 C

0.1

COLLECTOR TO EMITTER

SATURATION VOLTAGE : V

0.01

0.001 0.01 0.1 1

COLLECTOR CURRENT : IC (A)

Fig.3 Collector-emitter saturation voltage
vs. collector current

1000

Cib

Ta=25 C

Ta=−45 C

IC=0A
f=1MHz
Ta=

25 C

10

IC/IB=50/1

1

IC/IB=20/1

BASE SATURATION VOLTAGE : V

0.1

0.001 0.01 0.1 1 10

IC/IB=10/1

COLLECTOR CURRENT : IC (A)

Fig.4 Base-emitter saturation voltage
vs.collector current

100

TRANSITION FREQUENCY : fT (MHz)

10

0.01 0.1 1 10

EMITTER CURRENT : IE (A)

Fig.5 Gain bandwidth product

vs. emitter current

100

Cob

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER INPUT CAPACITANCE : Cib (pF)

10

0.001 0.01 0.1 1 10 100

EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : V

CB

(V)

Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.A 2/2