2SD2675
Transistors
General purpose amplification (30V, 1A)
2SD2675
zApplicat ion
Low frequency amplifier
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
: max.350mV
At I
C
= 500mA / IB = 25mA
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, PW=1ms
∗
1
Mounted on a 25
∗
2
t
×25×
0.8mm Ceramic substrate
V
V
V
I
P
Tstg
CBO
CEO
EBO
I
CP
Tj
C
C
−55 to +150 °C
Limits
30
30
6
1
2
500
150
∗
2
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
BV
BV
BV
V
CEO
EBO
I
CBO
I
EBO
CE(sat)
FE
h
T
f
Cob
V
V
V
A
∗
1
A
mW
W1
°C
30
−−
30
−−
6
−−
−−
−−
120 350 mV
−
270
−
320
−
7
−
zExternal dimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
(2)
(1)
0.950.95
(1) Base
(2) Emitter
(3) Collector
1.9
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SD2675
V
C
=10µA
I
V
C
=1mA
I
V
E
=10µA
I
100 nA
100 nA
680
−
−
VCB=30V
EB
=6V
V
IC/IB=500mA/25mA
− V
CE/IC
=2V/100mA
MHz
VCE=2V, IE=−100mA, f=100MHz
pF
VCB=10V, IE=0A, f=1MHz
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
Taping
∗
∗
TL
3000
Rev.B 1/2
2SD2675
1
1
)
e
1
)
e
.5
n
1
1
0
)
)
Transistors
zElectrical characteristic curves
1000
FE
Ta=25°C
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
Ta=100°C
Ta=−40°C
VCE=2V
Pulsed
C
(A)
(A)
C
0.01
1
0.1
Ta=100°C
Ta=25°C
Ta=−40°C
VCE=2V
Pulsed
10
(V
(V)
CE (sat)
BE (sat)
1
0.1
0.01
0.001 0.01 0.1
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
V
Ta=−40°C
Ta=25°C
Ta=100°C
V
COLLECTOR CURRENT : I
BE(sat)
CE(sat)
Fig.2 Collector-emitter saturation voltag
base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
Ta=100°C
IC/IB=20/1
IC/IB=20
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
C
10
(V
CE(sat)
1
0.1
0.01
0.001
(A)
0.001 0.01 0.1
COLLECTOR SATURATION VOLTAGE : V
IC/IB=50/1
IC/IB=20/1
IC/IB=10/1
COLLECTOR CURRENT : I
Ta=25°C
V
CE
=2V
C
(A)
Fig.3 Collector-emitter saturation voltag
vs. collector current
1000
tdon
100
tr
10
tf
tstg
COLLECTOR CURRENT : I
0.001
0
0.5
BASE TO EMITTER VOLTAGE : V
1.0
Fig.4 Grounded emitter propagatio
characteristics
VCE=2V
TRANSITION FREQUENCY : f
1
BE
(V)
10
0.01 0.1
EMITTER CURRENT : I
Ta=25°C
f=100MHz
E
(A)
Fig.5 Gain bandwidth product
vs. emitter current
SWITCHING TIME : (ns)
Ta=25°C
V
CE
=5V
C/IB
=20/1
I
1
0.01 0.1
COLLECTOR CURRENT : I
Fig.6 Switching time
C
(A)
100
Cib
Cob
10
1
0.01 0.1 1 10 10
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
IC=0A
f=1MHz
Ta=25°C
EB
CB
(V)
(V
Rev.B 2/2
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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