ROHM 2SD2675 Technical data
2SD2675
Transistors
General purpose amplification (30V, 1A)
2SD2675
zApplicat ion
Low frequency amplifier
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
: max.350mV
At I
C
= 500mA / IB = 25mA
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, PW=1ms
∗
1
Mounted on a 25
∗
2
t
×25×
0.8mm Ceramic substrate
V
V
V
I
P
Tstg
CBO
CEO
EBO
I
CP
Tj
C
C
−55 to +150 °C
Limits
30
30
6
1
2
500
150
∗
2
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
BV
BV
BV
V
CEO
EBO
I
CBO
I
EBO
CE(sat)
FE
h
T
f
Cob
V
V
V
A
∗
1
A
mW
W1
°C
30
−−
30
−−
6
−−
−−
−−
120 350 mV
−
270
−
320
−
7
−
zExternal dimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
(2)
(1)
0.950.95
(1) Base
(2) Emitter
(3) Collector
1.9
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SD2675
V
C
=10µA
I
V
C
=1mA
I
V
E
=10µA
I
100 nA
100 nA
680
−
−
VCB=30V
EB
=6V
V
IC/IB=500mA/25mA
− V
CE/IC
=2V/100mA
MHz
VCE=2V, IE=−100mA, f=100MHz
pF
VCB=10V, IE=0A, f=1MHz
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
Taping
∗
∗
TL
3000
Rev.B 1/2
2SD2675
1
1
)
e
1
)
e
.5
n
1
1
0
)
)
Transistors
zElectrical characteristic curves
1000
FE
Ta=25°C
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
Ta=100°C
Ta=−40°C
VCE=2V
Pulsed
C
(A)
(A)
C
0.01
1
0.1
Ta=100°C
Ta=25°C
Ta=−40°C
VCE=2V
Pulsed
10
(V
(V)
CE (sat)
BE (sat)
1
0.1
0.01
0.001 0.01 0.1
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
V
Ta=−40°C
Ta=25°C
Ta=100°C
V
COLLECTOR CURRENT : I
BE(sat)
CE(sat)
Fig.2 Collector-emitter saturation voltag
base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
Ta=100°C
IC/IB=20/1
IC/IB=20
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
C
10
(V
CE(sat)
1
0.1
0.01
0.001
(A)
0.001 0.01 0.1
COLLECTOR SATURATION VOLTAGE : V
IC/IB=50/1
IC/IB=20/1
IC/IB=10/1
COLLECTOR CURRENT : I
Ta=25°C
V
CE
=2V
C
(A)
Fig.3 Collector-emitter saturation voltag
vs. collector current
1000
tdon
100
tr
10
tf
tstg
COLLECTOR CURRENT : I
0.001
0
0.5
BASE TO EMITTER VOLTAGE : V
1.0
Fig.4 Grounded emitter propagatio
characteristics
VCE=2V
TRANSITION FREQUENCY : f
1
BE
(V)
10
0.01 0.1
EMITTER CURRENT : I
Ta=25°C
f=100MHz
E
(A)
Fig.5 Gain bandwidth product
vs. emitter current
SWITCHING TIME : (ns)
Ta=25°C
V
CE
=5V
C/IB
=20/1
I
1
0.01 0.1
COLLECTOR CURRENT : I
Fig.6 Switching time
C
(A)
100
Cib
Cob
10
1
0.01 0.1 1 10 10
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
IC=0A
f=1MHz
Ta=25°C
EB
CB
(V)
(V
Rev.B 2/2
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