ROHM 2SD2674 Technical data
2SD2674
Transistors
General purpose amplification (12V, 1.5A)
2SD2674
zApplicat ion
Low frequency amplifier
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
<
CE(sat)
200mV
V
=
C
at I
= 500mA / I
B
= 25mA
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, PW=1ms
∗2 Mounted on a 25
t
×25×
0.8mm Ceramic substrate
CBO
CEO
V
V
EBO
I
CP
I
P
Tj
Tstg
C
Limits
C
−55 to +150 °C
15
12
6
1.5
3
500
∗2
150
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
BV
BV
BV
I
I
V
Cob
CEO
EBO
CBO
EBO
CE(sat)
FE
h
f
T
V
V
V
A
∗1
A
mW
W1
°C
15
−−
12
−−
6
−−
−−
−−
85 200 mV
−
270
−
400
−
12
−
zExternal dimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
(2)
(1)
0.950.95
(1) Base
(2) Emitter
(3) Collector
1.9
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SD2674
V
I
C
=10µA
V
C
=1mA
I
V
E
=10µA
I
100 nA
100 nA
680
−
−
VCB=15V
EB
=6V
V
IC/IB=500mA/25mA
− V
CE/IC
=2V/200mA
MHz
VCE=2V, IE=−200mA, f=100MHz
pF
VCB=10V, IE=0A, f=1MHz
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
Taping
∗
∗
TL
3000
Rev.B 1/2
2SD2674
0
0
)
0
e
n
.5
0
0
0
)
Transistors
zElectrical characteristic curves
1000
FE
Ta=25°C
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 1
COLLECTOR CURRENT : I
Ta=100°C
Ta=−40°C
Fig.1 DC current gain
vs. collector current
10
(A)
C
1
Ta=100°C
0.1
Ta=25°C
VCE=2V
Pulsed
C
(A)
VCE=2V
Pulsed
10
(V
(V)
BE (sat)
BASE SATURATION VOLTAGE : V
Ta=−40°C
CE (sat)
COLLECTOR SATURATION VOLTAGE : V
Ta=25°C
V
Ta=100°C
1
0.1
V
0.01
0.001
0.001 0.01 0.1 1 1
COLLECTOR CURRENT : I
BE(sat)
Ta=100°C
CE(sat)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
IC/IB=20/1
IC/IB=20
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
C
(A)
1
(V)
CE(sat)
0.1
IC/IB=50/1
0.01
IC/IB=20/1
IC/IB=10/1
0.001
0.001 0.01 0.1 1 1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.3 Collector-emitter saturation voltag
vs. collector current
1000
100
tstg
Ta=25°C
V
CE
=2V
C
(A)
Ta=25°C
V
CE
=2V
f=100MHz
0.01
COLLECTOR CURRENT : I
0.001
0
0.5
BASE TO EMITTER VOLTAGE : V
Ta=−40°C
1.0
Fig.4 Grounded emitter propagatio
characteristics
VCE=2V
E
(A)
Ta=25°C
Pulsed
TRANSITION FREQUENCY : f
10
1
−0.001 −0.01 −0.1 −1 −1
BE
(V)
EMITTER CURRENT : I
Fig.5 Gain bandwidth product
vs. emitter current
10
SWITCHING TIME : (ns)
1
0.01 0.1 1 1
COLLECTOR CURRENT : I
tdon
tf
tr
Fig.6 Switching time
C
(A)
100
Cib
Cob
10
1
0.1 1 10 10
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
vs. collector-base voltage
IE=0A
f=1MHz
Ta=25°C
Emitter input capacitance
vs. emitter-base voltage
CB
(V)
Rev.B 2/2
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