ROHM 2SD2672 Technical data

Transistors

Low frequency amplifier

2SD2672

zApplicat ion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large. (4A)

2) V

CE(sat)

≦ 250mV

C

= 2A / IB = 40mA

At I

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1 Single pulse, PW=1ms
∗2 Mounted on a 25

t

×25×

0.8mm Ceramic substrate

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

Limits

15
12

6
4
8

500

∗2

1W

150

−55 to +150

BV
BV
BV

I
I

CE(sat)

V

CBO
EBO

h

f

CBO
CEO
EBO

FE

T

15
12

270 − 680

Cob − 60 −

zExternal dimensions (Unit : mm)

TSMT3

(1) Base
(2) Emitter
(3) Collector

zPackaging specifications

Unit

V

Type

V
V
A
A

mW

∗1

2SD2672

°C
°C

−−

−−

6

−−

−−

− 70

−

−−

250

V
V

V
100
100

nA VCB=15V
nA VEB=6V

250 mV

− V

MHz

−

pF

2SD2672

2.9

0.4

(3)

(2)

(1)

0.950.95

1.9

Package
Code
Basic ordering unit (pieces)

C

=10µA

I
IC=1mA

E

=10µA

I

IC=2A, IB=40mA

CE

VCE=2V, IE=−200mA, f=100MHz
V

CB

1.0MAX

0.85

0.7

2.8

1.6

0

~

0.1

0.6

~

0.3

0.16

Each lead has same dimensions

=2V, IC=200mA

∗

=10V, IE=0A, f=1MHz

Taping

TL

3000

∗

Rev.C 1/2

Transistors

0

e

0

)

e

0

n

2

)

0

0

0

zElectrical characteristic curves

1000

FE

Ta=25°C

Ta=−40°C

100

Ta=125°C

2SD2672

1

(V)

BE (sat)

(V)

CE (sat)

0.1

Ta=125°C

Ta=25°C

IC/IB=20/1

IC/IB=20

Pulsed

Pulsed

1

(V

CE(sat)

Ta=25°C

0.1

Ta=−40°C

Ta=125°C

IC/IB=20/1
Pulsed

DC CURRENT GAIN : h

VCE=2V
Pulsed

10

0.001 0.01 0.1 1 1

COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

10

VBE=2V
Pulsed

(A)

C

1

Ta=125°C

0.1

0.01

COLLECTOR CURRENT : I

0.001
01

BASE TO EMITTER CURRENT : V

Ta=25°C

Ta=−40°C

Fig.4 Grounded emitter propagatio

characteristics

10000

tdon

1000

tstg

100

tf

C

(A)

BE

(V)

Ta=25°C

VCE=−5V
f=100MHz

0.01

0.001

0.001 0.01 0.1 1

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Ta=−40°C

Fig.2 Collector-emitter saturation voltag

base-emitter saturation voltage
vs. collector current

1000

Cib

Cob

100

10

1

0.001 0.10.01

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF

COLLECTOR TO BASE VOLTAGE : V

11010

Fig.5 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

1

C

(A)

Ta

I

C

=

f=1MHz

0.01

0.001 0.01 0.1 1 1

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

C

(A)

Fig.3 Collector-emitter saturation voltag

vs. collector current

1000

(MHz)

T

100

=

25

°C

0A

EB

V)

(

CB

TRANSITION FREQUENCY : f

10

0.01 0.1 1 1

V)

(

EMITTER CURRENT : I

Ta=25°C
V
f=100MHz

E

(A)

CE

=−2V

Fig.6 Gain bandwidth product

vs. emitter current

SWITCHING TIME : (ns)

10

1

0.01 10.1 1

COLLECTOR CURRENT : I

Fig.7 Switching time

tr

C

(A)

Rev.C 2/2