ROHM 2SD2670 Technical data

Transistors

Low frequency amplifier

2SD2670

zApplication

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

At lc=1.5A / l

: max.250mV

CE(sat)

=30mA

B

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power siddipation
Junction temperature

Range of storage temperature

Single pulse, Pw=1ms

∗1

Mounted on a 25

∗2

t

×25×

0.8mm Ceramic substrate

Symbol

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulse

zExternal dimensions (Unit : mm)

TSMT3

(1) Base
(2) Emitter
(3) Collector

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

Limits

15
12

6

C

3
6

C

500

∗2

1W

150

−55 to +150

CBO

BV

CEO

BV

EBO

BV

CBO

I

EBO

I

V

CE(sat)

FE

h

T

f

Cob − 30 −

Unit

V
V
V
A
A

mW

°C
°C

15
12

6

−−

−−

− 120

270 − 680

−

2.9

0.4

(3)

(2)

(1)

0.950.95

1.9

∗1

−−

−−

−−

360

1.0MAX

0.85

0.7

2.8

1.6

0

~

0.16

Each lead has same dimensions

100
100
250 mV

MHz

−

0.1

0.6

~

0.3

V

I

C

=10µA

V

I

C

=1mA

V

I

E

=10µA
nA VCB=15V
nA VEB=6V

IC=1.5A, IB=30mA

− V

CE

=2V, IC=500mA
VCE=2V, IE=−500mA, f=100MHz
V

CB

pF

=10V, IE=0A, f=1MHz

2SD2670

∗

∗

Rev.C 1/2

Transistors

zPackaging specifications

package

Type

2SD2670

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

Code
Basic ordering unit (pieces)

Ta=100 C

Ta=25 C

Ta=40 C

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain
vs. collector current

Taping

TL

3000

VCE=−2V
Pulsed

10

IC/IB=20/1

CE

=2V

V

(V)

Pulsed

CE(sat)

1

Ta=100 C

0.1

COLLECTOR TO EMITTER

SATURATION VOLTAGE : V

0.01

0.001 0.01 0.1 1

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltage
vs. collector current

Ta=25 C

Ta= −45 C

2SD2670

10

(V)

BE(sat)

IC/IB=50/1

1

IC/IB=20/1

BASE SATURATION VOLTAGE : V

0.1

10

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

Fig.3 Base-emitter saturation voltage
vs.collector current

IC/IB=10/1

Ta=25 C
Pulsed

10

(A)

C

1

0.1

0.01

Ta=100 C

Ta=25 C

Ta= −45 C

COLLECTOR CURRENT :I

0.001

0.1 1 10

BASE TO EMITTER CURRENT : VBE (V)

Fig.4 Grounded emitter propagation
characteristics

IC/IB=20/1
Pulsed

1000

100

TRANSITION FREQUENCY : fT (MHz)

10

0.01 0.1 1 10

EMITTER CURRENT : IE (A)

Fig.5 Gain bandwidth product

vs. emitter current

Ta=25 C
VCE=−2V
f= 100MHz

1000

Cib

100

Cob

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER INPUT CAPACITANCE : Cib (pF)

10

0.001 0.01 0.1 1 10 100

EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : V

Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

IC=0A
f=1MHz

25 C

Ta=

CB

(V)

Rev.C 2/2