ROHM 2SD2662 Technical data

2SD2662

Transistors

Low frequency amplifier

2SD2662

zApplication

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

CE(sat) ≦ 350mV

C = 1A / IB = 50mA

At I

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1 Single pulse, PW=1ms
∗2 Mounted on a 40

Parameter Symbol

t

×40×

0.7mm Ceramic substrate

V
V
V

tstg

CBO
CEO
EBO

I

C

I

CP

P

C

tj

Limits

30
30

6

1.5
3

500

∗2

2W

150

−55 to +150

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut off current
Emitter cut off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

Unit

V
V
V
A

∗1

A

mW

°C
°C

CBO

BV

CEO

BV

EBO

BV

CBO

I

EBO

I

V

CE(sat)

FE

h

T

f

Cob − 11 −

30
30

270 − 680

zDimensions (Unit : mm)

ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89

zPackaging specifications

Type

2SD2662

−−

−−

6

−−

−−

− 160

−

−−

100
100
350 mV

330

Abbreviated symbol : FZ

Package
Code
Basic ordering unit (pieces)

V

I

C

=10µA

V

I

C

=1mA

V

I

E

=10µA
nA VCB=30V
nA VEB=6V

IC=1A, IB=50mA

CE

− V

MHz

−

pF

=2V, IC=100mA
VCE=2V, IE=−100mA, f=100MHz
V

CB

=10V, IE=0A, f=1MHz

(1)Base
(2)Collector
(3)Emitter

Taping

T100
1000

∗

∗

Rev.B 1/2

2SD2662

Transistors

zElectrical characteristic curves

1

VCE=2V
Pulsed

(A)

C

Ta=100°C

0.1

Ta=25°C

Ta=−40°C

1000

Ta=100°C

FE

Ta=25°C

Ta=−40°C

100

VCE=2V
Pulsed

1

Ta=25°C

(V)

Pulsed

CE(sat)

0.1

0.01

COLLECTOR CURRENT : I

0.001
0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

Fig.1 Grounded emitter propagation

characteristics

10

(V)

(V)

CE (sat)

V

BE (sat)

1

0.1
V

0.01

0.001 0.01 0.1 101

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

Ta=−40°C

Ta=25°C

BE(sat)

Ta=100°C

Ta=100°C

CE(sat)

COLLECTOR CURRENT : I

Ta=−40°C

Fig.4 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

1000

tstg

Ta=25°C

VCE=5V
f=100MHz

BE

IC/IB=20/1

IC/IB=20
Pulsed

Pulsed

Ta=25°C

C

IC/IB=50/1

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10

C

(V)

COLLECTOR CURRENT : I

(A)

Fig.2 DC current gain

vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1 10

(A)

EMITTER CURRENT : I

Ta=25°C
V
f=100MHz

E

(A)

CE

=2V

EMITTER INPUT CAPACITANCE : Cib (pF)

Fig.5 Gain bandwidth product

vs. emitter current

IC/IB=20/1

0.01

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

IC/IB=10/1

C

(A)

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

100

10

1

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

Cib

1 10 1000.1

Cob

Ta=25°C

I

f=1MHz

C

=

0A

EB

V)

(

CB

V)

(

Fig.6 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

100

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 10
COLLECTOR CURRENT : I

tf

tdon

tr

C

(A)

Fig.7 Switching time

Rev.B 2/2