ROHM 2SD2661 Technical data

2SD2661

Transistors

Low frequency amplifier transistor(12V, 2A)

2SD2661

zFeatures

Low V

CE(sat) ≤ 180mV

(I

C / IB = 1A / 50mA)

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

CBO

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector Power dissipation
Junction temperature

Storage temperature

∗1 PW=1ms Single Pulse
∗2 Mounted on a 40 40 0.7mm ceramic substrcte

+

+

V
VCEO
VEBO

IC

PC

Tj

Tstg

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance

Limits

15
12

6
2
4

500

2

150

−55 to +150

CBO

BV

CEO

BV

EBO

BV

I

CBO
EBO

I

h

FE

CE(sat)

V

f

T

Unit

V
V
V

A(DC)

A(Pulse)

mW

∗

2

W

°C
°C

15
12

6

−−

−−

270

−

−

Cob − 20 −

zExternal dimensions (Unit : mm)

1.0

0.4

1.5

3.0

1.5

ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89

(1)

(2)

0.5

(3)

0.4

0.4

Abbreviated symbol : FW

zPackaging specifications

Package

∗

1

Type

2SD2661

Code
Basic ordering unit (pieces)

−

V

I

C

=10µA

V

I

C

=1mA

V

IE=10µA
nA VCB=15V
nA VEB=6V

− V

CE

=2V, IC=200mA

mV

IC / IB=1A / 50mA

MHz

VCE=2V, IE=−200mA, f=100MHz

V

CB

pF

=10V, IE=0A, f=1MHz

−−

−−

−−

100
100
680

−

90

180

360

4.0

2.5

0.5

4.5

1.6

1.5

(1)Base
(2)Collector
(3)Emitter

Taping

T100
1000

Rev.A 1/2

Transistors

zElectrical characteristic curves

10

(A)

C

1

Ta=100°C

0.1

0.01

COLLECTOR CURRENT : I

0.001
0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

Fig.1 Grounded emitter propagation

characteristics

Ta=25°C

Ta=−40°C

VCE=2V
Pulsed

BE

1

IC/IB=20
Pulsed

(V)

CE(sat)

0.1

Ta=100°C

0.01

COLLECTOR TO EMITTER

SATURATION VOLTAGE : V

0.001

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.4 Base-emitter saturation voltage

vs. collector current

Ta=25°C

Ta=−40°C

C

(A)

2SD2661

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10

(V)

Ta=100°C

Ta=25°C

Ta=−40°C

COLLECTOR CURRENT : I

C

VCE=2V
Pulsed

(A)

Fig.2 DC current gain

vs. collector current

1000

(MHz)

100

TRANSITION FREQUENCY : fT

10

−0.001 −0.01 −0.1 −1 −10
EMITTER CURRENT : I

Ta=25°C

CE

=2V

V
f=100MHz

E

(A)

Fig.5 Gain bandwidth product

vs. emitter current

1

(V)

Ta=25°C

Pulsed

CE(sat)

0.1

IC/IB=50

0.01

IC/IB=20

IC/IB=10

0.001

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

COLLECTOR SATURATION VOLTAGE : V

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

100

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

Cib

Cob

1 10 1000.1

Fig.6 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

C

(A)

Ta=25˚C

I

E

=

0A

f=1MHz

EB

(

CB

V)

V)

(

Rev.A 2/2