ROHM 2SD2657K Technical data

2SD2657K

Transistors

Low frequency amplifier

2SD2657K

!!!!Application

Low frequency amplifier
Driver

!!!!Features

1) A collector current is large.

2) V

CE(sat) ≤ 350mV

At I

C = 1A / IB = 50mA

!!!!Absolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗Single pulse, PW=1ms

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

!!!!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

Limits

30
30

6

1.5
3

200
150

−55~+150

BV
BV
BV

I
I

CE(sat)

V

CBO
EBO

h

f

CBO
CEO
EBO

FE
T

30
30

270 − 680

Cob − 11 −

!!!!External dimensions (Units : mm)

0.4

0.3Min.

ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346

!!!!Packaging specifications

Unit

V
V
V
A

∗

A

mW

°C
°C

6

−−

−−

− 160

−

Type
2SD2657K

−−

−−

−−

100
100
350 mV

330

−

V
V

V
nA VCB=30V
nA VEB=6V

− V

MHz

pF

)

1

(

1.9

2.9

)

2

)

(

3

(

0.15

Abbreviated symbol : FZ

0.95 0.95

1.6

2.8

1.1

0.8

0~0.1

Each lead has same dimensions

(1) Emitter
(2) Base
(3) Collector

Package
Code
Basic ordering unit (pieces)

I

C

=10µA

C

=1mA

I
I

E

=10µA

IC=1A, IB=50mA

CE

=2V, IC=100mA

∗

VCE=2V, IE=−100mA, f=100MHz

CB

=10V, IE=0A, f=1MHz

V

Taping

T146
3000

∗

1/2

2SD2657K

Transistors

!!!!Electrical characteristic curves

1000

FE

Ta=25°C

Ta=100°C

Ta=−40°C

VCE=2V
Pulsed

10

(V)

BE (sat)

(V)

CE (sat)

Ta=−40°C

BE(sat)

Ta=25°C

Ta=100°C

V

1

IC/IB=20/1

IC/IB=20
Pulsed

Pulsed

1

Ta=25°C

(V)

Pulsed

CE(sat)

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

C

Fig.1 DC current gain

vs. collector current

1

VCE=2V
Pulsed

(A)

C

COLLECTOR CURRENT : I

0.001

Ta=100°C

0.1

0.01

0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

Ta=25°C

Ta=−40°C

Fig.4 Grounded emitter propagation

characteristics

1000

100

10

Cib

Cob

(A)

BE

Ta=25°C

I

f=1MHz

0.1

0.1
V

CE(sat)

0.01

0.001 0.01 0.1 101

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Ta=100°C

Ta=−40°C

Ta=25°C

C

(A)

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage

IC/IB=50/1

IC/IB=20/1

0.01

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

IC/IB=10/1

C

(A)

Fig.3 Collector-emitter saturation voltage

vs. collector current

vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1 10

(V)

EMITTER CURRENT : I

Ta=25°C

CE

=2V

V
f=100MHz

E

(A)

Fig.5 Gain bandwidth product

1000

100

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.6 Switching time

tstg

Ta=25°C

VCE=5V
f=100MHz

tf

tdon

tr

C

(A)

vs. emitter current

(A)

C

0.01

10

P

W

=100ms

1ms

10ms

1

0.1

DC Operation

C

=

0A

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

1 10 1000.1

EB

V)

(

CB

V)

(

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Ta=25°C

COLLECTOR CURRENT : I

Single Pulse

0.001

0.1 1 10 100

COLLECTOR TO EMITTER VOLTAGE : V

Fig.8 Safe Operating Area

CE

(V)

2/2