ROHM 2SD2657 Technical data

2SD2657

Transistors

Low frequency amplifier

2SD2657

zApplicat ion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

CE(sat)

: max.350mV

At I

C

= 1A / IB = 50mA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1 Single pulse, PW=1ms
∗2 Mounted on a 25

t

×25×

0.8mm Ceramic substrate

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

Limits

30
30

6

1.5
3

500

∗2

1W

150

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

CBO

BV

CEO

BV

EBO

BV

I

CBO
EBO

I

CE(sat)

V

FE

h

f

T

Cob − 11 −

30
30

270 − 680

Rev.B 1/2

zExternal dimensions (Unit : mm)

TSMT3

(1) Base
(2) Emitter
(3) Collector

zPackaging specifications

Unit

V
V
V
A
A

mW

∗1

Type
2SD2657

°C
°C

−−

−−

6

−−

−−

−−

− 140

300

−

100
100
350 mV

V
V

V
nA VCB=30V
nA VEB=6V

− VCE=2V, IC=100mA

MHz

−

pF

2.9

0.4

(3)

(2)

(1)

0.950.95

1.9

Package
Code
Basic ordering unit (pieces)

C

=10µA

I

C

=1mA

I

E

=10µA

I

1.0MAX

0.85

0.7

2.8

1.6

0

~

0.1

0.6

~

0.3

0.16

Each lead has same dimensions

IC=1A, IB=50mA

∗

VCE=2V, IE=−100mA, f=100MHz
V

CB

=10V, IE=0A, f=1MHz

Taping

TL

3000

∗

2SD2657

0

0

)

e

0

)

e

.5

n

0

0

0

)

Transistors

zElectrical characteristic curves

1000

FE

Ta=25°C

Ta=100°C

Ta=−40°C

VCE=2V
Pulsed

10

(V)

BE (sat)

(V

CE (sat)

Ta=−40°C

BE(sat)

Ta=25°C

Ta=100°C

V

1

IC/IB=20/1

IC/IB=20

Pulsed

Pulsed

1

Ta=25°C

(V

Pulsed

CE(sat)

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 1
COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

1

VCE=2V
Pulsed

(A)

C

COLLECTOR CURRENT : I

0.001

Ta=100°C

0.1

0.01

0 0.5 1 1

BASE TO EMITTER CURRENT : V

Ta=25°C

Ta=−40°C

Fig.4 Grounded emitter propagatio

characteristics

1000

100

Cib

C

(A)

BE

(V)

Ta=25°C

I

C

=

0A

f=1MHz

0.1

V

CE(sat)

0.01

0.001 0.01 0.1 1

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Ta=100°C

Ta=−40°C

Fig.2 Collector-emitter saturation voltag

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1 1
EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

Ta=25°C

1

C

(A)

Ta=25°C

CE

=2V

V
f=100MHz

E

(A)

0.1

IC/IB=50/1

IC/IB=20/1

0.01

0.001 0.01 0.1 1 1

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

IC/IB=10/1

Fig.3 Collector-emitter saturation voltag

vs. collector current

1000

tstg

100

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 1
COLLECTOR CURRENT : I

Fig.6 Switching time

C

Ta=25°C

VCE=5V
f=100MHz

tf

tdon

tr

C

(A)

(A)

10

1

0.1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF

COLLECTOR TO BASE VOLTAGE : V

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance

Cob

11010

EB

V)

(

CB

V)

(

vs. emitter-base voltage

Rev.B 2/2