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2SD2657
Transistors
Low frequency amplifier
2SD2657
zApplicat ion
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) V
CE(sat)
: max.350mV
At I
C
= 1A / IB = 50mA
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, PW=1ms
∗2 Mounted on a 25
t
×25×
0.8mm Ceramic substrate
CBO
V
V
CEO
V
EBO
I
I
CP
P
Tj
Tstg
C
C
Limits
30
30
6
1.5
3
500
∗2
1W
150
−55 to +150
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
CBO
BV
CEO
BV
EBO
BV
I
CBO
EBO
I
CE(sat)
V
FE
h
f
T
Cob − 11 −
30
30
270 − 680
Rev.B 1/2
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
zPackaging specifications
Unit
V
V
V
A
A
mW
∗1
Type
2SD2657
°C
°C
−−
−−
6
−−
−−
−−
− 140
300
−
100
100
350 mV
V
V
V
nA VCB=30V
nA VEB=6V
− VCE=2V, IC=100mA
MHz
−
pF
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
Package
Code
Basic ordering unit (pieces)
C
=10µA
I
C
=1mA
I
E
=10µA
I
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
IC=1A, IB=50mA
∗
VCE=2V, IE=−100mA, f=100MHz
V
CB
=10V, IE=0A, f=1MHz
Taping
TL
3000
∗
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2SD2657
Transistors
zElectrical characteristic curves
1000
FE
Ta=25°C
Ta=100°C
Ta=−40°C
VCE=2V
Pulsed
10
(V)
BE (sat)
(V
CE (sat)
Ta=−40°C
BE(sat)
Ta=25°C
Ta=100°C
V
1
IC/IB=20/1
IC/IB=20
Pulsed
Pulsed
1
Ta=25°C
(V
Pulsed
CE(sat)
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 1
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
1
VCE=2V
Pulsed
(A)
C
COLLECTOR CURRENT : I
0.001
Ta=100°C
0.1
0.01
0 0.5 1 1
BASE TO EMITTER CURRENT : V
Ta=25°C
Ta=−40°C
Fig.4 Grounded emitter propagatio
characteristics
1000
100
Cib
C
(A)
BE
(V)
Ta=25°C
I
C
=
0A
f=1MHz
0.1
V
CE(sat)
0.01
0.001 0.01 0.1 1
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Ta=100°C
Ta=−40°C
Fig.2 Collector-emitter saturation voltag
base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
TRANSITION FREQUENCY : f
10
0.01 0.1 1 1
EMITTER CURRENT : I
Fig.5 Gain bandwidth product
vs. emitter current
Ta=25°C
1
C
(A)
Ta=25°C
CE
=2V
V
f=100MHz
E
(A)
0.1
IC/IB=50/1
IC/IB=20/1
0.01
0.001 0.01 0.1 1 1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
IC/IB=10/1
Fig.3 Collector-emitter saturation voltag
vs. collector current
1000
tstg
100
10
SWITCHING TIME : (ns)
1
0.01 0.1 1 1
COLLECTOR CURRENT : I
Fig.6 Switching time
C
Ta=25°C
VCE=5V
f=100MHz
tf
tdon
tr
C
(A)
(A)
10
1
0.1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
Cob
11010
EB
V)
(
CB
V)
(
vs. emitter-base voltage
Rev.B 2/2