ROHM 2SD2656 Technical data

2SD2656

Transistors

General purpose amplification (30V, 1A)

2SD2656

!!!!Application

)

Low frequency amplifier

!!!!Features

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE(sat) ≤ 350mV

At I

C = 500mA / IB = 25mA

!!!!External dimensions (Units : mm)

!!!!Absolute maximum ratings (Ta=25°C)

Parameter Symbol Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗Single pulse, PW=1ms

V
V
V

I
P

Tstg

CBO
CEO
EBO

I

CP

Tj

C

C

Limits

30
30

6
1

2
200
150

−55~+150 °C

!!!!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

BV
BV
BV

V

CBO

CEO

EBO

I

CBO

EBO

I

CE(sat)

FE

h

T

f

Cob

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗1 Pulsed

V
V
V
A

∗

A

mW

°C

30

−−

30

−−

6

−−

−−

−−

140 350 mV

−

270

−

400

−

5

−

100 nA
100 nA

680

MHz

−

pF

−

0.3

0.15

0.1Min.

ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323

Abbreviated symbol : EU

!!!!Packaging specifications

Package
Code

Type

Basic ordering unit (pieces)

2SD2656

V

I

C

=10µA

V

C

=1mA

I

V

E

=10µA

I
VCB=30V

EB

=6V

V

IC/IB=500mA/25mA

− V

CE/IC

=2V/100mA
VCE=2V, IE=−100mA, f=100MHz
VCB=10V, IE=0A, f=1MHz

1

(

0.65

)

2

)

3

(

1.25

2.1

Each lead has same dimensions

0~0.1

1.3

(

0.65

0.2

0.9

0.7

2.0

(1) Emitter
(2) Base
(3) Collector

1

∗

1

∗

Taping

T106
3000

1/2

2SD2656

Transistors

!!!!Electrical characteristic curves

1000

FE

Ta=25°C

Ta=100°C

Ta=−40°C

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1
COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

1

(A)

C

0.1

Ta=100°C

0.01

Ta=25°C

Ta=−40°C

VCE=2V
Pulsed

C

(A)

VCE=2V
Pulsed

10

(V)

(V)

BE (sat)

CE (sat)

Ta=−40°C
Ta=100°C

1

Ta=25°C

V

BE(sat)

0.1

V

CE(sat)

0.01

0.001 0.01 0.1 1

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

Ta=100°C

IC/IB=20/1

IC/IB=20
Pulsed

Pulsed

Ta=25°C

Ta=−40°C

C

10

(V)

CE(sat)

Ta=25°C
V

CE

=2V

1

0.1

IC/IB=50/1

IC/IB=20/1

0.01

0.001

(A)

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

IC/IB=10/1

COLLECTOR CURRENT : I

C

(A)

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

tdon

100

tr

10

tf

tstg

COLLECTOR CURRENT : I

0.001
0

BASE TO EMITTER VOLTAGE : V

Fig.4 Grounded emitter propagation

characteristics

100

Cib

Cob

10

1

0.01 0.1 1 10 100

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

1.51.00.5

BE

(V)

IC=0A
f=1MHz
Ta=25°C

EB

CB

TRANSITION FREQUENCY : f

10

0.01 0.1 1

10

(A)

C

0.1

0.01

COLLECTOR CURRENT : I

0.001

(V)

(V)

VCE=2V
Ta=25°C
f=100MHz

EMITTER CURRENT : I

E

(A)

Fig.5 Gain bandwidth product

vs. emitter current

P

W

=100ms

1ms

10ms

CE

1

DC Operation

Ta=25°C
Single Pulse

0.1 1 10 100

COLLECTOR TO EMITTER VOLTAGE : V

Fig.8 Safe Operating Area

SWITCHING TIME : (ns)

Ta=25°C
V

CE

=5V

C/IB

=20/1

I

1

0.01 0.1 1
COLLECTOR CURRENT : I

Fig.6 Switching time

(V)

C

(A)

2/2