ROHM 2SD2653K Technical data

Transistors

Low frequency amplifier

2SD2653K

2SD2653K

!!!!Application

Low frequency amplifier
Driver

!!!!Features

1) A collector current is large.

2) V

≤ 180mV

CE(sat)

At I

= 1A / IB = 50mA

C

!!!!Absolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗Single pulse, PW=1ms

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

Limits

15
12

6
2

4
200
150

−55~+150

!!!!External dimensions (Units : mm)

0.4

0.3Min.

Abbreviated symbol

Unit

V
V
V
A
A

mW

°C
°C

∗

ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346

0.15

)

1

(

1.9

)

2

)

(

3

(

0.95 0.95

1.6

2.8

1.1

0.8

0~0.1

Each lead has same dimensions

: FW

2.9

(1) Emitter
(2) Base
(3) Collector

!!!!

Electrical characteristics

(Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

!!!!Packaging specifications

Package

Code
Type
2SD2653K

Basic ordering unit (pieces)

BV
BV
BV

I
I

CE(sat)

V

CBO
EBO

h

f

CBO
CEO
EBO

FE

T

15
12

6

−−

−−

−−

−−

−−

− 90

270 − 680

360

−

Cob − 20 −

Taping

T146

3000

V
V

V
100
100

nA VCB=15V
nA VEB=6V

180 mV

− V

MHz

−

pF

C

=10µA

I
I

C

=1mA

I

E

=10µA

IC=1A, IB=50mA

CE

=2V, IC=200mA

∗

VCE=2V, IE=−200mA, f=100MHz

CB

=10V, IE=0A, f=1MHz

V

∗

Transistors

!!!!Electrical characteristic curves

1000

FE

Ta=100°C

Ta=25°C

Ta=−40°C

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

VCE=2V
Pulsed

C

(A)

(V)

CE(sat)

1

0.1

0.01

COLLECTOR TO EMITTER

SATURATION VOLTAGE : V

0.001

0.001 0.01 0.1 1 10

Fig.2 Base-emitter saturation voltage

IC/IB=20/1
V

CE

=2V

Pulsed

Ta=100°C

COLLECTOR CURRENT : I

vs. collector current

Ta=25°C

Ta=−40°C

C

(A)

2SD2653K

1

(V)

Ta=25°C

Pulsed

CE(sat)

0.1

IC/IB=50/1

0.01

IC/IB=20/1

IC/IB=10/1

0.001

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

COLLECTOR SATURATION VOLTAGE : V

Fig.3 Collector-emitter saturation voltage

vs. collector current

C

(A)

10

(A)

C

1

Ta=100°C

0.1

Ta=25°C

Ta=−40°C

VCE=2V
Pulsed

0.01

COLLECTOR CURRENT : I

0.001
0 0.5 1 1.5

BE

BASE TO EMITTER CURRENT : V

(V)

Fig.4 Grounded emitter propagation

characteristics

1000

100

Cib

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

1 10 1000.1

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Cob

Ta=25˚C

I

C

=

0A

f=1MHz

EB

(

CB

V)

V)

(

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.001 0.01 0.1 1 10
EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

10

(A)

C

1

DC Operation

0.1

COLLECTOR CURRENT : I

0.01

0.01 0.1 1 10 100
COLLECTOR TO EMITTER VOLTAGE : V

Fig.8 Safe Operating Area

10ms

PW=100ms

Ta=25°C
V

CE

=2V

f=100MHz

E

(A)

Ta=25°C
Single Pulsed

1ms

CE

(V)

1000

100

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 10
COLLECTOR CURRENT : I

Ta=25°C

VCE=5V
f=100MHz

tstg

tdon
tf

tr

C

(A)

Fig.6 Switching time