ROHM 2SD2653 Technical data
2SD2653
Transistors
Low frequency amplifier
2SD2653
zApplicat ion
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) V
CE(sat)
≦ 180mV
C
= 1A / IB = 50mA
at I
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, PW=1ms
∗2 Mounted on a 25
t
×25×
0.8mm Ceramic substrate
CBO
V
V
CEO
V
EBO
I
I
CP
P
Tj
Tstg
C
C
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
zPackaging specifications
Package
Code
Type
Basic ordering unit (pieces)
2SD2653
Limits
15
12
6
2
4
500
∗2
1W
150
−55 to +150
BV
BV
BV
I
I
CE(sat)
V
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
15
12
270 − 680
Cob − 20 −
Taping
TL
3000
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
Unit
V
V
V
A
∗1
A
mW
°C
°C
−−
−−
6
−−
−−
−−
− 90
360
−
100
100
180 mV
V
V
V
nA VCB=15V
nA VEB=6V
− VCE=2V, IC=200mA
MHz
−
pF
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
I
C
=10µA
C
=1mA
I
I
E
=10µA
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
IC=1A, IB=50mA
∗
VCE=2V, IE=−200mA, f=100MHz
CB
=10V, IE=0A, f=1MHz
V
∗
Rev.B 1/2
2SD2653
0
0
0
e
.5
0
0
0
)
Transistors
zElectrical characteristic curves
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 1
Ta=100°C
Ta=25°C
Ta=−40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
10
(A)
C
1
Ta=100°C
0.1
Ta=25°C
VCE=2V
Pulsed
C
(A)
VCE=2V
Pulsed
1
IC/IB=20/1
V
CE
=2V
(V)
Pulsed
CE(sat)
0.1
Ta=100°C
0.01
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
0.001
0.001 0.01 0.1 1 1
COLLECTOR CURRENT : I
Fig.2 Base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
Ta=25°C
Ta=−40°C
C
(A)
Ta=25°C
CE
=2V
V
f=100MHz
1
(V)
Ta=25°C
Pulsed
CE(sat)
0.1
IC/IB=50/1
0.01
IC/IB=20/1
IC/IB=10/1
0.001
0.001 0.01 0.1 1 1
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
Fig.3 Collector-emitter saturation voltag
vs. collector current
1000
100
C
(A)
Ta=25°C
VCE=5V
f=100MHz
tstg
Ta=−40°C
0.01
COLLECTOR CURRENT : I
0.001
0 0.5 1 1
BASE TO EMITTER CURRENT : V
BE
Fig.4 Grounded emitter propagation
characteristics
TRANSITION FREQUENCY : f
10
0.001 0.01 0.1 1 1
(V)
EMITTER CURRENT : I
E
(A)
Fig.5 Gain bandwidth product
vs. emitter current
10
SWITCHING TIME : (ns)
1
0.01 0.1 1 1
COLLECTOR CURRENT : I
C
Fig.6 Switching time
tdon
tf
tr
(A)
1000
100
10
1
0.1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
Cib
11010
Cob
Ta=25˚C
I
f=1MHz
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
C
=
0A
EB
V)
(
CB
V)
(
Rev.B 2/2
Loading...