ROHM 2SD2652 Technical data

2SD2652

Transistors

General purpose amplification (12V, 1.5A)

2SD2652

!!!!Application

Low frequency amplifier

!!!!Features

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE(sat) ≤ 200mV

At I

C = 500mA / IB = 25mA

!!!!Absolute maximum ratings (Ta=25°C)

Parameter Symbol Unit

CBO

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗Single pulse, PW=1ms

V

CEO

V
V

EBO

I

CP

I
P

Tj

Tstg

C

C

Limits

15
12

6

1.5
3

200
150

mW

°C

−55~+150 °C

!!!!External dimensions (Units : mm)

)

3

(

0.3

1.25

2.1

0.15

0.1Min.

0~0.1

ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323

Abbreviated symbol : EW

!!!!Packaging specifications

Package

V
V
V
A
A

Type
2SD2652

∗

Code
Basic ordering unit (pieces)

)

1

(

0.65

)

2

2.0

1.3

(

0.65

0.2

0.9

0.7

Each lead has same dimensions

(1) Emitter
(2) Base
(3) Collector

Taping

T106
3000

!!!!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗1 Pulsed

BV
BV
BV

I
I

V

Cob

CBO

CEO

EBO

CBO

EBO

CE(sat)

FE

h

T

f

15

−−

12

−−

6

−−

−−

−−

80 200 mV

−

270

−

400

−

12

−

100 nA
100 nA

680

MHz

−

pF

−

V

C

=10µA

I

V

I

C

=1mA

V

I

E

=10µA

VCB=15V

EB

=6V

V

IC/IB=500mA/25mA

− V

CE/IC

=2V/200mA
VCE=2V, IE=−200mA, f=100MHz
VCB=10V, IE=0A, f=1MHz

1

∗

1

∗

Transistors

!!!!Electrical characteristic curves

1000

FE

Ta=25°C

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.1 DC current gain

Ta=100°C

Ta=−40°C

VCE=2V
Pulsed

C

(A)

vs. collector current

10

(V)

(V)

BE (sat)

BASE SATURATION VOLTAGE : V

Ta=−40°C

CE (sat)

COLLECTOR SATURATION VOLTAGE : V

Ta=25°C

V

Ta=100°C

1

0.1

V

0.01

0.001

0.001 0.01 0.1 1 10

BE(sat)

Ta=100°C

CE(sat)

COLLECTOR CURRENT : I

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

IC/IB=20/1

IC/IB=20
Pulsed

Pulsed

Ta=25°C

Ta=−40°C

C

(A)

2SD2652

1

(V)

CE(sat)

0.1

IC/IB=50/1

0.01

IC/IB=20/1

IC/IB=10/1

0.001

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.3 Collector-emitter saturation voltage

vs. collector current

Ta=25°C
V

CE

=2V

C

(A)

(A)

C

0.01

10

1

Ta=100°C

0.1

Ta=25°C

Ta=−40°C

VCE=2V
Pulsed

COLLECTOR CURRENT : I

0.001
0

BASE TO EMITTER VOLTAGE : V

Fig.4 Grounded emitter propagation

characteristics

100

Cib

Cob

10

BE

(V)

IE=0A
f=1MHz
Ta=25°C

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

1.51.00.5

−0.001 −0.01 −0.1 −1 −10
EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

10

(A)

C

1

0.1

P

W

=100ms

DC Operation

E

10ms

(A)

VCE=2V
Ta=25°C
Pulsed

1ms

1000

100

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.6 Switching time

tdon

tstg

tf

Ta=25°C
V

CE

=2V

f=100MHz

tr

C

(A)

1

0.1 1 10 100

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Ta=25°C

COLLECTOR CURRENT : I

Single Pulse

0.01

EB

(V)

CB

(V)

0.01 0.1 1 10 100
COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.8 Safe Operating Area