ROHM 2SD2537 Schematic [ru]
2SD2537
1
2
Transistors
Medium Power Transistor (25V, 1.2A)
2SD2537
zFeatures
1) High DC current gain.
2) High emitter-base voltage. (V
EBO
=12V)
3) Low saturation voltage.
(Max. V
CE(sat)
=0.3V at IC/IB=500mA/10mA)
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Parameter Symbol
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse Pw=100ms ∗2 When mounted on a 40×40×0.7mm ceramic board.
V
V
V
P
Tstg
Limits
CBO
CEO
EBO
I
C
C
Tj
30
25
12
1.2
2
0.5 W
2
150
−55 to +150
zPackaging specifications and h
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
2SD2537
MPT3
V
DV
T100
1000
FE
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
BV
BV
BV
V
V
I
I
CE(sat)
BE(sat)
DC current transfer ratio
Transition frequency
Output capacitance
∗Measured using pulse current.
Cob
A (Pulse)
CBO
CEO
EBO
CBO
EBO
FE
h
f
T
Unit
V
V
V
A (DC)
W
°C
°C
zDimensions (Unit : mm)
2SD2537
ROHM : MPT3
EIAJ : SC-62
∗
∗
30
−
−
25
−
−
12
−
−
200
20
−
−
−
−
0.3
0.3
0.3
1.2 V
1800
−
−
−
−
−
−−
820
−
−
4.5
1.6
(3)(2)(1)
0.5
0.40.4
1.51.5
3.0
C
=10µA
V
I
C
=1mA
I
V
E
=10µA
I
V
V
CB
V
I
C
V
=30V
EB
=12V
/IB=500mA/10mA
µA
µA
IC/IB=0.5A/10mA
V
CE/IC
−
MHz
pF
=5V/0.5A
VCE=10V, IE=−50mA, f=100MHz
CB
=10V, IE=0A, f=1MHz
V
0.5
2.5
1.0
4.0
1.5
0.4
(1) Base
(2) Collector
(3) Emitter
∗
∗
Rev.C 1/3
Transistors
)
5
)
s
4
)
0
)
0
)
e
0
0
0
)
e
0
zElectrical characteristics curves
2.0
Ta=25
°C
(mA)
1.6
C
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
0.1 0.2 0.3 0.4 0.
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Ground emitter output characteristics(
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
2 5 10 20 50
COLLECTOR CURRENT : I
Fig.4 DC current gain vs. collector current (
1000
(mV
500
BE(sat)
200
100
50
20
10
5
Ta=100
°C
25
°C
−25
2.0µA
1.8µA
1.6µA
1.4µA
1.2µA
1.0µA
0.8µA
0.6µA
0.4µA
0.2µA
100 200 500 1000 200
°C
VCE=10V
C
(mA)
IB=0
Ta=25
Pulsed
1V
IC/IB=50
Pulsed
CE
(V)
°C
5V
3V
2.0
(A)
C
1.6
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
3.5mA
3.0mA
2.5mA
4.0mA
4.5mA
5.0mA
0.1 0.2 0.3 0.4 0.50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
IB=0
2.0mA
1.5mA
1.0mA
0.5mA
Ta=25°C
Pulsed
Fig.2 Ground emitter output characteristics (
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
Ta=100
°C
25
°C
−25
°C
2 5 10 20 50
COLLECTOR CURRENT : I
100 200 500 1000 200
Fig.5 DC current gain vs. collector current (
C
V
Pulsed
(mA)
CE
=5V
10000
5000
(mV)
BE(sat)
2000
1000
500
200
100
IC/IB=10
50
100
50
Ta=25
Pulsed
2000
1000
500
(mA)
C
200
100
50
20
10
5
COLLECTOR CURRENT : I
2
0
BASE TO EMITTER VOLTAGE : V
Fig.3 Ground emitter propagation characteristic
1000
(mV
500
BE(sat)
200
100
50
IC/IB=100
20
50
10
10
5
2
1
COLLECTOR SATURATION VOLTAGE : V
2 5 10 20 50
COLLECTOR CURRENT : I
Fig.6 Collector-emitter saturation voltag
vs. collector current ( )
°C
10000
5000
(mV)
BE(sat)
2000
1000
500
200
100
50
2SD2537
°C
°C
°C
100
−25
25
=
Ta
0.6 0.4 0.2 1.0 0.8 1.2 1.
100 200 500 1000 200
Ta
= −
25
°C
50
100
C
(mA)
V
CE
Pulsed
BE
Ta=25
Pulsed
IC/IB=50
Pulsed
=
5V
(V)
°C
2
1
COLLECTOR SATURATION VOLTAGE : V
2 5 10 20 50
COLLECTOR CURRENT : I
100 200 500 1000 200
C
(mA)
Fig.7 Collector-emitter saturation voltag
vs. collector current ( )
Rev.C 2/3
20
BASE SATURATION VOLTAGE : V
10
2 5 10 20 50
COLLECTOR CURRENT : I
100 200 500 1000 200
C
(mA)
Fig.8 Base-emitter saturation voltage
vs. collector current ( )
20
BASE SATURATION VOLTAGE : V
10
2 5 10 20 50
COLLECTOR CURRENT : I
100 200 500 1000 200
C
(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( )
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