ROHM 2SD2398, 2SD2195, 2SD1980, 2SD1867 Datasheet

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398

Transistors

Power Transistor (100V , 2A)

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398

Features

!

1) Darlington connection for high DC current gain.

2) Built-in resistor between base and emitter.

3) Built-in damper diode.

4) Complements the 2SB1580 / 2SB1316 / 2SB1567.

Absolute maximum ratings

!

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector
power
dissipation

Junction temperature

Storage temperature

∗

1 Single pulse Pw=100ms

∗

2 When mounted on a 40 x 40 x 0.7 mm ceramic board.

∗

3

Packaging specifications and h

!

Basic ordering unit (pieces)

∗

Denotes h

2SD2195
2SD1980
2SD1867
2SD2398

Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.

Type 2SD2195

Package

FE

Marking

FE

h

Code

1k ∼ 10k

MPT3

DP
T100
1000

(Ta = 25°C)

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj

Tstg

2SD1980

CPT3

1k ∼ 10k

−

∗

TL

2500

Limits

100
100

6
2
3
2
1

10

1
2

20

150

−55 ∼ +150

FE

2SD1867

ATV

1k ∼ 10k

−

TV2
2500

W(Tc=25°C)

W(Tc=25°C)

2SD2398

TO-220FN

1k ∼ 10k

−

−

500

Unit

A(DC)

W

W

°C
°C

V
V
V

External dimensions

!

2SD2195

ROHM : MPT3
EIAJ : SC-62

0.4

1.5

3.0

1.5

0.4

(Units : mm)

4.0

1.0

2.5

(1)

(2)

0.5

(3)

0.4

0.5

1.6

4.5

(1) Base(Gate)
(2) Collector(Drain)

1.5

(3) Emitter(Source)

2SD1980

1.5

1A(Pulse)

∗

2

∗

∗

3

ROHM : CPT3
EIAJ : SC-63

2SD1867

0.65Max.

ROHM : ATV

5.5

0.75

0.9

)
1

(
)

2.3

2

(
)

3

(

2.3

0.65

0.8Min.

1.5

1.0

0.5

2.5

6.8

(2)

(3)

(1)

2.54

2.54

5.1

0.9

C0.5

0.5

9.5

4.4

0.9

1.0

14.5

0.5

Taping specifications

6.5

(1) Base(Gate)
(2) Collector(Drain)

2.5

0.451.05

(3) Emitter(Source)

(1) Emitter
(2) Collector
(3) Base

2.3

Circuit schematic

!

C

B

R1R

2

R
R

Electrical characteristics

!

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Output capacitance

Measured using pulse current.

∗

E

1

3.5kΩ

B

: Base

C

: Collector

2

300Ω

E

: Emitter

Parameter Symbol Min. Typ. Max. Unit Conditions

transfer ratio

(Ta = 25°C)

BV

CBO

100

BV

CEO

100

I

CBO

−

I

EBO

V

−

CE(sat)

−−1.5 V I

FE

1000 − 10000 − V

h

Cob

−

2SD2398

10.0

15.0

12.0

8.0

1.2

5.0

14.0

2.54

(1)

(2)

(3)

(1)

(2)

(3)

4.5

2.8

3.2

φ

1.3

0.8

0.75

2.54

2.6

)

(1) Base(Gate
(2) Collector(Drain

(3) Emitter(Source

)
)

ROHM : TO-220FN

C

=

−

−

−

−

−

10

−

3

25

−

50µA

V

I

C

=

5mA

I

V

V

CB

=

µA

mA

pF

100V

EB

=

5V

V

C

=

1A , I

B

=

1mA

CE

=

2V , I

C

=

=

10V , I

1A

E

=

0A , f = 1MHz

V

CB

∗
∗