ROHM 2SD2391 Schematic [ru]
Transistors
Medium Power Transistor (60V, 2A)
2SD2391
zFeatures
1) Low saturation voltage , typically
V
CE (sat) =0.13V at IC / IB =1A /50mA.
2) Collector-emitter voltage =60V
3) Pc = 2W (on 40×40×0.7mm ceramic board).
4) Complements the 2SB1561.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40 40 0.7mm ceramic board.
+
+
CBO
V
VCEO
VEBO
IC
PC
Tj
Tstg
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
BV
BV
BV
I
I
V
CE(sat)
Cob
CBO
EBO
h
h
f
CBO
CEO
EBO
FE1
FE2
T
Limits
60
60
6
2
6
0.5
2
150
−55 to +150
60
60
6
−
−
−
120
45
−
−
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
(3)(2)(1)
0.5
1.51.5
(1)Base
(2)Collector
(3)Emitter
3.0
Unit
V
V
V
A
∗
1
A
W
∗
2
°C
°C
I
V
V
V
µA
µA
V
−
−
MHz
pF
C
=50µA
C
=1mA
I
I
E
=50µA
V
CB
=50V
EB
=5V
V
I
C/IB
=1A/50mA
CE/IC
V
CE/IC
V
CE
=2V, IE=−0.5A, f=100MHz
V
V
CB
=10V, IE=0A, f=1MHz
0.13
210
21
−
−
−
−
−
−
−
−
0.1
0.1
0.35
270
−
−
−
−
−
0.5
2.5
4.0
1.0
0.40.4
=−2V/−0.5A
=−2V/−1.5A
1.5
2SD2391
0.4
∗
∗
Rev.A 1/3
Transistors
zPackaging specifications and h
Type 2SD2391
16mA
I
B
=0mA
MPT3
DT
T100
1000
Ta=
VCE=5V
Q
14mA
12mA
2V
1V
∗
10mA
8mA
6mA
4mA
2mA
Ta=25
25
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes h
∗
FE
z Electrical characteristic curves
2.0
(A)
C
1.6
1.2
CURRENT : l
0.8
0.4
20mA
18mA
COLLECTOR
0.0
045
COLLECTOR TO EMITTER VOLTAGE
231
Fig.1 Grounded emitter output
characteristics
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
10m 20m 50m 100m 200m 500m
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( ΙΙ )
FE
5
2
1
(A)
C
500m
200m
100m
50m
20m
10m
5m
COLLECTOR CURRENT : I
°C
: VCE (V)
C
°
10512
2m
1m
0.40.2 0.80.6 1.2 1.41.0 1.60
BASE TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter propagation
characteristics
1000
(mV)
500
CE(sat)
200
100
50
20
10
5
2
1
5m 10m 20m 50m 100m 200m 500m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation
voltage vs. collector current ( Ι )
C
°
100
25°C
=
Ta
Ta=100°C
−40°C
2SD2391
VCE=2V
C
−40°
BE
(V)
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
10m 20m 50m 100m200m 500m
100
Ta=
COLLECTOR CURRENT : IC (A)
°C
25
°C
°C
40
−
12 510
Fig.3 DC current gain vs.
collector current ( Ι )
1000
(mV)
500
CE(sat)
200
100
50
20
10
5
2
512
1
5m 10m 20m 50m100m 200m 500m
COLLECTOR SATURATION VOLTAGE : V
=50
B
/I
C
I
20
10
COLLECTOR CURRENT : IC (A)
25°C
20
=
B
/I
C
I
Fig.6 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
VCE=2V
Ta=25°C
512
Rev.A 2/3
Loading...