ROHM 2SD2707, 2SD2654, 2SD2351, 2SD2226K, 2SD2227S Technical data
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
General Purpose Transistor (50V, 0.15A)
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
zFeatures
1) High DC current gain.
2) High emitter-base voltage. (V
CBO=12V)
3) Low saturation voltage.
(Typ. V
CE(sat)=0.3V at IC/IB=50mA/5mA)
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Parameter Symbol
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD2654, 2SD2707
2SD2351, 2SD2226K
2SD2227S
Junction temperature
Storage temperature
∗Single
pulse Pw=100ms
V
V
V
P
Tstg
CBO
CEO
EBO
I
Tj
C
C
Limits
60
50
12
0.15
0.2
0.15
0.2
0.3
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
zPackaging specifications and h
Type
package
h
FE
Marking
Code
Basic ordering unit (pleces)
Denotes
h
FE
∗
2SD2707
VMT3
VW
BJ
∗
T2L
8000
2SD2654
EMT3
VW
BJ
TL
3000
FE
2SD2351
∗
UMT3
VW
BJ
T106
3000
∗
2SD2226K
SMT3
VW
BJ
∗
T146
3000
2SD2227S
Rev.A 1/3
zExternal dimensions (Unit : mm)
2SD2707
ROHM : EMT3
2SD2654
∗
ROHM : EMT3
EIAJ : SC-75A
0.3
0.15
0.1Min.
2SD2351
0.3
SPT
VW
TP
5000
−
ROHM : UMT3
EIAJ : SC-70
2SD2226K
ROHM : SMT3
EIAJ : SC-59
2SD2227S
ROHM : SPT
EIAJ : SC-72
Each lead has same dimensions
0.4
Each lead has same dimensions
1.2
0.80.2 0.2
(2)
1.2
0.32
(3)
(1)
0.22
0.5
0.13
0.2
(1)
(2)
(3)
0.8
0.2
1.6
0.55
0~0.1
)
1
(
)
2
)
(
3
(
1.25
2.1
0.15
0.1Min.
0.15
0.3Min.
3
)
15Min.
(
(1) (2) (3)
Taping specifications
0.2
0~0.1
)
1
(
)
2
)
(
3
(
1.6
2.8
0~0.1
42
3Min.
0.45
2.5
0.5
5
0.8
0.40.4
(1) Base
(2) Emitter
(3) Collector
1.6
1.0
0.50.5
0.7
(1) Emitter
(2) Base
(3) Collector
0.65
2.0
1.3
0.65
0.9
0.7
0.95 0.95
0.8
0.45
1.9
2.9
1.1
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Collector
(3) Base
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
zElectrical characteristics (Ta = 25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
zElectrical characteristics curves
2.0
Ta=25°C
1.6
(mA)
2.0µA
C
1.8µA
1.6µA
1.4µA
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter output
characteristics ( Ι )
Parameter Symbol Min. Typ. Max. Unit Conditions
1.2µA
1.0µA
0.8µA
0.6µA
0.4µA
0.2µA
0.20.1 0.3 0.4
IB=0
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
FE
h
f
T
Cob
0.5
CE
(V)
60
−
50
12
−
−
−
820
−
−
200
500µA
450µA
160
(mA)
400µA
C
350µA
300µA
120
80
40
COLLECTOR CURRENT : I
0
020
COLLECTOR TO EMITTER VOLTAGE : V
−
−
−
−
−
0.3
−
0.3
−
0.3
−
2700
−
250
−
3.5
−
Ta=25°C
Measured
using pulse current
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
C
=10µA
V
I
C
=1mA
I
V
E
=10µA
I
V
CB
=50V
V
µA
EB
=12V
V
µA
C
/IB=50mA/5mA
I
V
−
CE/IC
=5V/1mA
V
VCE=5V, IE=−10mA, f=100MHz
MHz
CB
=5V, IE=0A, f=1MHz
V
pF
A
250µ
µA
200
A
µ
150
A
100µ
50µA
841216
IB=0
CE
(V)
200
VCE=5V
100
50
(mA)
C
20
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0 0.40.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
∗
∗
∗
C
°
C
25°
25
−
Ta=100
0.6 0.8 1.0
°C
1.41.2
10000
5000
2000
FE
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
0.2 1 2 50.5 10 20 50100
COLLECTOR CURRENT : I
Ta=25°C
Measured
using pulse current
Fig.4 DC current gain vs.
collector current ( Ι )
C
(mA)
VCE=10V
5V
3V
200
10000
5000
2000
FE
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
0.2 1 2 50.5 10 20 50100
Ta=100
C
°
25
−25
COLLECTOR CURRENT : I
Measured
using pulse current
C
°
C
°
VCE=5V
Fig.5 DC current gain vs.
collector current ( ΙΙ )
C
(mA)
1000
(mV)
500
CE(sat)
200
100
COLLECTOR SATURATION VOLTAGE : V
200
IC / IB=50
50
20
10
5
2
1
0.2 200
20
10
12 50.5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
Ta=25
°C
Rev.A 2/3
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