ROHM 2SD1867, 2SD1980, 2SD2195 Schematic [ru]
2SD2195 / 2SD1980 / 2SD1867
Transistors
Power Transistor (100V, 2A)
2SD2195 / 2SD1980 / 2SD1867
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1580 / 2SB1316.
zEquivalent circuit
C
B
R1R
2
E
1
2
3.5kΩ
300Ω
: Base
B
: Collector
C
: Emitter
E
R
R
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
∗
1 Single pulse Pw=100ms
∗
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
∗
3
Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.
2SD2195
2SD1980
2SD1867
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
100
6
2
∗1
3 A(Pulse)
0.5
∗2
2
1
10
∗3
1
150
−55 to +150
W(Tc=25°C)
Unit
V
V
V
A(DC)
W
W
°C
°C
zExternal dimensions (Unit : mm)
2SD2195
ROHM : MPT3
EIAJ : SC-62
2SD1980
ROHM : CPT3
EIAJ : SC-63
2SD1867
0.65Max.
ROHM : ATV
0.75
4.5
1.6
(1)
(3)(2)
0.5
1.51.5
3.0
6.5
5.1
0.9
(2)
2.54
0.65
2.3
2.3
(3)
(2)
6.8
0.5
(3)
2.54
0.9
(1)
(1)
1.5
0.5
2.5
4.0
1.0
0.40.4
1.5
5.5
4.4
0.9
1.0
14.5
Taping specifications
2.3
0.5
1.5
2.5
0.8Min.
0.5
1.0
0.4
(1) Base
(2) Collector
(3) Emitter
9.5
(1) Base
(2) Collector
(3) Emitter
2.5
0.451.05
(1) Emitter
(2) Collector
(3) Base
Rev.B 1/3
Transistors
)
n
nt
nt
e
)
e
)
2SD2195 / 2SD1980 / 2SD1867
FE
zPackaging specifications and h
Type
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
Denotes h
FE
∗
2SD2195 2SD1980 2SD1867
MPT3 CPT3 ATV
1k to 10k 1k to 10k 1k to 10k
DP
T100
1000 2500 2500
−−
TL TV2
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltag
Base-Emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
BV
BV
BV
V
V
I
CBO
I
EBO
CE(sat)
BE(sat)
h
f
Cob
CBO
CBO
EBO
FE
T
100
−
100
−
6
−−
−
−
−
−
−−
−−
1000
−
80
−
25
−
−
−
10
3
1.5 V
2.0 V
10000
−
−
V
V
V
µA
mA
− V
MHz
pF
I
C
=
50µA
I
C
=
5mA
E
=
5mA
I
CB
=
100V
V
EB
=
5V
V
C
= 1A ,
I
C/IB
=
1A/1mA
I
CE
= 2V ,
CE
= 5V ,
V
CB
=
10V , IE = 0A , f =
V
IB =
IC =
IE =
1mA
1A
−0.1A , f
=
30MHz
1MHz
∗
∗
zElectrical characteristic curves
2.0
Ta=25°C
(A)
1.6
C
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
1mA
23410
Fig.1 Grounded emitter output
characteristics
=0.3mA
B
I
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
CE
10
5
A)
(
2
C
1
0.5
0.2
0.1
0.05
COLLECTOR CURRENT : I
0.02
0.01
5
(V
BASE TO EMITTER VOLTAGE : V
C
°
Ta=100
Fig.2 Grounded emitter propagatio
characteristics
V)
10000
Ta=25°C
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
COLLECTOR CURRENT : I
VCE=4V
2V
0.10.010.001
C
(A)
VCE=2V
C
C
°
25°
−25
2.6 3.01.41.0 1.8 2.20.60.2
BE
(
101
Fig.3 DC current gain vs. collector curre
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
0.001 0.002 0.005 0.01 0.02 0.05
COLLECTOR CURRENT : I
C
°
Ta=100
0.1 0.2 0.5 1 2 5 10
VCE=2V
25°C
°C
−25
C
(A)
100
(V
50
CE(sat)
20
10
5
2
1
0.5
0.2
0.1
COLLECTOR SATURATION VOLTAGE : V
0.0.1
0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
IC/IB=1000
500
Ta=25
100
(V
°C
50
CE(sat)
20
10
5
2
1
0.5
0.2
0.1
COLLECTOR SATURATION VOLTAGE : V
0.0.1
0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
IC/IB=1000
Ta=−25
°C
25
°C
100
°C
Fig.4 DC current gain vs. collector curre
Fig.5 Collector-emitter saturation voltag
vs.collector current
Fig.6 Collector-emitter saturation voltag
vs.collector current
Rev.B 2/3
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