Transistors
Medium Power Transistor
+
20
(Motor, Relay drive) (90 , 2A)
2SD2170
−
10
2SD2170
Features
!
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
"L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
Absolute maximum ratings
!!!!
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 Single pulse Pw = 10ms , Duty = 1 / 2
*
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
*
Packaging specifications and h
!
Type 2SD2170
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
V
V
V
Tstg
MPT3
1k~10k
DM
T100
1000
(Ta=25°C)
Limits
+20
CBO
CES
EBO
I
C
P
C
Tj
90
−10
+20
90
−10
6
2
3
2
150
−55~+150
FE
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
External dimensions
!!!!
ROHM : MPT3
EIAJ : SC-62
1
*
2
*
(Units : mm)
4.0
1.0
2.5
(1)
0.4
1.5
(2)
3.0
0.5
(3)
1.5
0.4
0.4
Circuit diagram
!
B
E
: Emitter
B
: Base
C
: Collector
0.5
1.6
4.5
(1) Base(Gate)
R
2R1
3.5kΩ
300 Ω
C
E
(2) Collector(Drain)
(3) Emitter(Source)
1.5
R
1
2
R
Electrical characteristics
!!!!
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
*
Parameter Symbol Min. Typ. Max. Unit Conditions
1 Measured using pulse current.
(Ta=25°C)
80
CBO
BV
BV
V
2 Transition frequency of the device.
*
I
I
CE(sat)
Cob
80
CEO
-
CBO
-
EBO
- - 1.5 V IC/IB = 1A/1mA
1000
h
FE
-
f
T
-
110
-
10
-
3
-
10000
-
-
80
-
25
I
C
= 50µA
V
I
C
= 1mA
µA
V
CB
= 70V
mA
V
EB
= 5V
-
V
CE
= 2V , IC = 1A
V
CE
= 5V , IE = −0.1A , f = 30MHz
MHz
V
pF
CB
= 10V , IE = 0A , f = 1MHz
1
*
1
*
2
*
V
110