ROHM 2SD2170 Datasheet

Transistors
Medium Power Transistor
+
20
(Motor, Relay drive) (90 , 2A)
2SD2170
10
2SD2170
Features
!
1) Built-in zener diode between collector and base.
3) Strong protection against reverse power surges due to "L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
Absolute maximum ratings
!!!!
Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current Collector power dissipation
Junction temperature Storage temperature
1 Single pulse Pw = 10ms , Duty = 1 / 2
*
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
*
Packaging specifications and h
!
Type 2SD2170
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
V V V
Tstg
MPT3
1k~10k
DM T100 1000
(Ta=25°C)
Limits
+20
CBO CES EBO
I
C
P
C
Tj
90
10 +20
90
10
6 2 3 2
150
55~+150
FE
Unit
V V V
A (DC)
A (Pulse)
W
°C °C
External dimensions
!!!!
ROHM : MPT3 EIAJ : SC-62
1
*
2
*
(Units : mm)
4.0
1.0
2.5
(1)
0.4
1.5
(2)
3.0
0.5
(3)
1.5
0.4
0.4
Circuit diagram
!
B
E
: Emitter
B
: Base
C
: Collector
0.5
1.6
4.5
(1) Base(Gate)
R
2R1
3.5k 300
C
E
(2) Collector(Drain) (3) Emitter(Source)
1.5
R
1 2
R
Electrical characteristics
!!!!
Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
*
Parameter Symbol Min. Typ. Max. Unit Conditions
1 Measured using pulse current.
(Ta=25°C)
80
CBO
BV BV
V
2 Transition frequency of the device.
*
I I
CE(sat)
Cob
80
CEO
-
CBO
-
EBO
- - 1.5 V IC/IB = 1A/1mA
1000
h
FE
-
f
T
-
­110
-
10
-
3
-
10000
-
-
80
-
25
I
C
= 50µA
V
I
C
= 1mA
µA
V
CB
= 70V
mA
V
EB
= 5V
-
V
CE
= 2V , IC = 1A
V
CE
= 5V , IE = 0.1A , f = 30MHz
MHz
V
pF
CB
= 10V , IE = 0A , f = 1MHz
1
*
1
*
2
*
V
110
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