ROHM 2SD2167 Datasheet

Transistors

Power Transistor (31±4V, 2A)

2SD2167

2SD2167

Features

!

1) Built-in zener diode between collector and base.

2) Zener diode has low voltage dispersion.

3) Strong protection against reverse power surges due
to low loads.

C

4) P

2 W (on 40×40×0.7mm ceramic board)

=

Absolute maximum ratings

!

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation
Junction temperature

Storage temperature

∗

1 Pw=20ms , duty=1 / 2

∗

2 When mounted on a 40 × 40 × 0.7 mm ceramic board.

(Ta = 25°C)

CBO

V
V

CEO

V

EBO

I

C

P

C

Tj

Tstg

Limits

31±4
31±4

5
2
3

0.5
2

150

−55 ∼ +150

A(DC)

Unit

External dimensions

!

ROHM : MPT3
EIAJ : SC-62

V
V
V

1A(Pulse)

∗

W
W

2

∗

°C
°C

1.0

0.4

1.5

3.0

0.5

1.5

0.4

0.4

(Units : mm)

4.0

2.5

0.5

(1)

(2)

1.6

(3)

4.5

1.5

(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)

Packaging specifications and h

!

Type 2SD2167

Package

FE

h

Marking

Code

Basic ordering unit (pieces)

∗

Denotes h

FE

Electrical characteristics

!

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

Collector-emitter saturation voltage
DC current transfer ratio

Transition frequency
Output capacitance

∗

Measured using pulse current.

Parameter Symbol Min. Typ. Max. Unit Conditions

MPT3

NPQ

DL
T100
1000

(Ta = 25°C)

FE

∗

I

270

V

35
35

−

1
1
1

−

−

µA
µA

MHz

pF

C

= 50µA

V

I

C

= 1mA

V

I

E

= 50µA

V

CB

= 20V

V

EB

= 5V

V

I

C/IB

= 2A/0.2A

C/IB

= 1A/50mA

−

V

CE/IC

= 3V/0.5A

V

CE

= 3V , IE = −0.5A , f= 30MHz

V

CB

= 10V , IE = 0A , f = 1MHz

∗

∗

∗

BV
BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

Cob

−

27

−

5

−

−

−

−

−

−

− 0.25 0.5 V I

56

−

−

100

−

25

−

27

CBO