ROHM 2SD2153 Datasheet
2SD2153
Transistors
High gain amplifier transistor (25V, 2A)
2SD2153
!!!!Features
1) Low saturation voltage,
typically V
= 0.12V at IC = IB = 1A / 20mA
CE(sat)
2) Excellent DC current gain characteristics.
!!!!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
Single pulse, Pw=10ms
V
V
V
Tstg
CBO
CEO
EBO
I
C
P
Tj
!!!!Packaging specifications and h
Type 2SD2153
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
∗
Denotes hFE
MPT3
UVW
DN
T100
1000
Limits
30
25
6
2
C
3 A(Pulse)
0.5
150
−55 ∼ +150
FE
∗
Unit
A(DC)
W
°C
°C
!!!!External dimensions (Units : mm)
4.0
1.0
2.5
0.5
(1)
0.4
1.5
(2)
1.6
3.0
0.5
(3)
1.5
0.4
ROHM : MPT3
EIAJ : SC-62
V
V
V
∗
0.4
4.5
(1) Base
1.5
(2) Collector
(3) Emitter
!!!!
Electrical characteristics
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
Parameter Symbol Min. Typ. Max. Unit Conditions
(Ta=25°C)
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
560
h
FE
f
T
Cob
30
−
25
−
6
−
−
−
−
− 0.12 0.5 V I
−
110
−
22
−
0.5
0.5
2700
V
−
V
−
µA
µA
−
MHz
−
pF
−
V
−
−
I
C
= 50µA
I
C
= 1mA
I
E
= 50µA
V
CB
= 20V
V
EB
= 5V
C/IB
= 1A/20mA
V
CE/IC
= 6V/0.5A
V
CE
= 10V , IE = −10mA , f= 100MHz
V
CB
= 10V , IE = 0A , f = 1MHz
∗
Loading...