ROHM 2SD2153 Schematic [ru]
2SD2153
Transistors
High gain amplifier transistor (25V, 2A)
2SD2153
zFeatures
1) Low saturation voltage,
typically V
CE(sat) = 0.12V at IC = IB = 1A / 20mA
2) Excellent DC current gain characteristics.
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1
Single pulse, Pw=10ms
∗2
Mounted on a 40 40
Parameter Symbol
t
+
+
0.7mm Ceramic substrate
V
V
V
P
Tstg
CBO
CEO
EBO
I
Tj
C
C
zPackaging specifications and h
Type 2SD2153
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
∗
Denotes h
FE
MPT3
UVW
DN
T100
1000
FE
∗
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
f
T
Cob
FE
Limits
30
25
6
2
3 A(Pulse)
0.5
∗2
2
150
−55 to +150
30
−
25
−
6
−
−
−
−
−
0.12 0.5 V
−
560
−
110
−
22
−
zExternal dimensions (Unit : mm)
1.0
(1)
0.4
1.5
(2)
3.0
0.5
(3)
1.5
0.4
0.4
Unit
V
V
V
A(DC)
W
°C
°C
ROHM : MPT3
EIAJ : SC-62
∗1
V
C
=
50µA
I
V
I
C
=
1mA
V
E
=
50µA
I
V
CB
=
V
I
V
V
V
EB
C/IB
CE/IC
CE
CB
20V
=
5V
=
1A/20mA
=
=
10V , I
=
10V , I
6V/0.5A
E
=
−10mA , f= 100MHz
E
=
0A , f = 1MHz
µA
µA
−
pF
0.5
0.5
2700
−
−
−
MHz
−
−
4.0
2.5
0.5
1.6
4.5
(1) Base
1.5
(2) Collector
(3) Emitter
∗
Rev.A 1/2
Transistors
zElectrical characteristics curves
2
10mA 7mA
9mA
8mA
(A)
C
1
COLLECTOR CURRENT : I
0
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output
characteristics
500m
200m
(V)
100m
(sat)
CE
50m
20m
IC/IB=50
10m
VOLTAGE : V
COLLECTOR SATURATION
1m1m2m2m5m5m10m
Fig.4
20m
COLLECTOR CURRENT : I
Collector-emitter saturation voltage
vs. collector current
1000
500
200
100
10
0.2200.5501
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
COLLECTOR TO BASE VOLTAGE : V
Fig.7
2
Collector output capacitance
vs. collector-base voltage
1
50m
5
4mA
100m
10
40
30
10
20 50 1000.1
3mA
200m
6mA
5mA
2mA
=1mA
B
1
500m
1125
C
(A)
Ta=25°C
f=1MHz
Ic=0A
CB
2
(V)
10
(A)
C
500m
200m
100m
50m
20m
10m
5m
COLLECTOR CURRENT : I
2m
1m
∗ This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
5
2
Ta=100 C
1
25 C
−25 C
1 1.5500m0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation
characteristics
IC/IB=10
500m
200m
(V)
100m
(sat)
CE
50m
20m
10m
VOLTAGE : V
COLLECTOR SATURATION
1m
Ta=100 C
25 C
−25 C
∗ This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
2m2m5m5m10m
20m
50m
100m
200m
500m
COLLECTOR CURRENT : IC (A)
11251m
Fig.5 Collector-emitter saturation voltage
vs. collector current
Ta=25°C
f=1MHz
Ic=0A
1000
500
200
100
EMITTER INPUT CAPACITANCE : Cib(pF)
10
0.2200.5501
2
5
0.1
EMITTER TO BASE VOLTAGE : V
Fig.8 Emitter input capacitance
vs. emitter-base voltage
10
EB
(V)
2SD2153
10k
VCE=6V
5k
FE
2k
1k
500
200
100
DC CURRENT GAIN : h
50
1m
10000
500
(MHz)
T
200
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1
2 5 10 20 50 100 200 500 1000
1
Fig.6 Gain bandwith product
vs. emitter current
10
Ic max (Pulse)
1
0.1
0.01
COLLECTOR CURRENT : Ic (A)
Ta=25°C
Single non repetitive pulse
0.001
COLLECTOR TO EMITTER VOLTAGE : V
Fig.9 Safe operating area
Ta=100 C
−40 C
10m 100m 1 10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain
∗ This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
EMITTER CURRENT : I
PW=100ms
DC
1
10
25 C
VCE=6V
Ta=25 C
E
(mA)
PW=10ms
1000.1
CE
(V)
Rev.A 2/2
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