ROHM 2SD2150 Schematic [ru]

Transistors

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z

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Low Frequency Transistor (20V, 3A)

2SD2150

Features

1) Low V

CE(sat).

V

CE(sat) =0.2V(T yp.)

IC / IB= 2A / 0.1A

2) Excellent current gain characteristics.

3) Complements the 2SB1424.

Structure

Epitaxial planar type
NPN silicon transistor

External dimensions (Unit : mm)

2SD2150

0.5±0.1

−0.1

+0.2

2.5

4.0±0.3

0.4±0.1

1.5±0.1

1.0±0.2

ROHM : MPT3
EIAJ : SC-62

+0.2

4.5

−0.1

1.6±0.1

(3)(2)(1)

0.5±0.1

0.4±0.1

1.5±0.1

3.0±0.2

Abbreviated symbol:

+0.2

1.5

−0.1

0.4

(1) Base
(2) Collector
(3) Emitter

CF

∗

+0.1

−0.05

2SD2150

z

Absolute maximum ratings (Ta=25qC)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature
Storage temperature

1 Single pulse Pw=10ms

∗

2 Mounted on a 40×40×0.7mm Ceramic substrate.

∗

Symbol Limits Unit

CBO

V
V

CEO

V

EBO

I

C

P

C

Tj

Tstg

Denotes h

∗

40 V
20

6
3

0.5
2

150

−55 to +150

FE

A (DC)

A (Pulse)5

W
W

°C
°C

V
V

1

∗

2

∗

Rev.A 1/3

Transistors

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Electrical characteristics (T a=25qC)

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

Measured using pulse current.

∗

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Packaging specifications and hFE

Package
Code T100
Basic ordering

FE

h

Type
2SD2150

unit (pieces)

RS

BV
BV
BV

I

CBO

I

EBO

V

CE(sat)

h

f

Cob

Taping

CBO

CEO

EBO

FE

T

1000

Min.

Typ. Max. Unit Conditions
40
20

6

−

−

−

120

−

−

−

−

−

−

−

0.2

−

290

25

−

−

−

0.1

0.1

0.5

560

−

−

MHz

C

=50μA

VI

C

=1mA

V

I

E

=50μA

I

V

CB

μ

A

V

EB

μ

A

V

V

I

C/IB

V

−

CE

V

CE

CE

V

pF

2SD2150

=30V
=5V

=2A/0.1A

=2V, IC=0.1A
=2V, IE= −0.5A, f=100MHz
=10V, IE=0A, f=1MHz

∗

hFE values are classified as follows :

Item

FE

h

z

Electrical characteristic curves

10

5
2

(A)

C

1

0.5

0.2

0.1

0.05

0.02

0.01
5m

COLLECTOR CURRENT : I

2m
1m

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

BASE TO EMITTER VOLTAGE : VBE

Fig.1 Grounded emitter propagation

characteristics

R

180 to 390S270 to 560

Ta=100°C

25°C

−40°C

VCE

=2V

(V)

2

20mA
18mA
16mA
14mA

(A)

1.6

C

1.2

0.8

0.4

COLLECTOR CURRENT : I

0

0 0.2 0.4 0.6 0.8 1.0

COLLECTOR TO EMITTER VOLTAGE : V

12mA

10mA

Fig.2 Grounded emitter output

characteristics ( )

Ta=25°C

8mA

6mA

4mA

2mA

B

=

I

5

50mA
45mA
40mA

(A)

4

C

3

2

1

COLLECTOR CURRENT : I

0A

CE

0

012345

COLLECTOR TO EMITTER VOLTAGE : V

(V)

Fig.3 Grounded emitter output

35mA

30mA

characteristics ( )

Ta=25°C

25mA

20mA
15mA

10mA

5mA

I

B

=0A

CE

(V)

Rev.A 2/3