ROHM 2SD2143 Technical data
Medium Power Transistor
(Motor, Relay drive) (6010V, 2A)
2SD2143
Features Dimensions (Unit : mm)
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse Pw=100ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
±
10
60
60
±
10
6
2
∗1
3 A (Pulse)
1
10
150
−55 to
+
150
Packaging specifications and h
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
FE
2SD2143
CPT3
1k to 10k
−
TL
2500
Inner circuit
C
Unit
V
V
V
A (DC)
W
W (Tc=25
°C
°C
°C)
)
1
(
2.3
)
2
(
)
3
(
2.3
0.8Min.
1.0
0.5
ROHM : CPT3
EIAJ : SC-63
5.5
0.75
0.9
0.9
0.65
1.5
2.5
9.5
1.5
6.5
5.1
C0.5
0.5
2.3
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
B
R
2
R
E :
B :
C :
Emitter
Base
Collector
1
E
R
1
3.5kΩ
2
300Ω
R
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
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○c 2012 ROHM Co., Ltd. All rights reserved.
Symbol Min. Typ. Max. Unit Conditions
I
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
f
Cob
CBO
CEO
FE
T
50
50
−
−
−
1000
−−
−
−
−
−
−
−
−
80
25
70
70
1.0
3
1.5
10000
−
V
V
μA
mA
V
−
MHz
pF
I
V
V
I
V
V
V
C
C
CB
EB
C/IB
CE
CE
CB
=
50μA
=
5mA
=
40V
=
5V
=
1A/1mA
=
2V, IC=
=
5V, IE= −0.
=
10V, IE=
1A
1A, f=30MHz
0A, f=1MHz
2012.01 - Rev.C
∗
2SD2143
Electrical characteristics curves
2.0
500μA
450μA
1.8
400μA
1.6
(A)
C
1.4
1.2
1.0
0.8
0.6
0.4
COLLECTOR CURRENT : I
0.2
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
300μA
Fig.1 Groundede emitter output
characteristics ( Ι )
10000
5000
FE
2000
1000
500
200
100
DC CURRENT GAIN : h
50
20
10
0.001 0.01 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( Ι )
100
(V)
50
CE(sat)
20
10
5
2
1
0.5
COLLECTOR SATURATION
VOLTAGE : V
0.2
0.01 0.1 0.2
COLLECTOR CURRENT : IC (A)
Ta=
Fig.7 Collector-emitter saturation
voltage vs. collector current
250μA
=200μA
B
I
−25°C
100°C
25°C
0.5
12 510
Ta=25°C
52341
Ta=25°C
VCE=4V
VCE=2V
IC/IB=1000
2.0
500μA
450μA
1.8
400μA
350μA
1.6
(A)
C
1.4
1.2
1.0
0.8
0.6
0.4
COLLECTOR CURRENT : I
0.2
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
300μA
250μA
=200μA
B
I
246810
Ta=25°C
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
10000
5000
FE
2000
1000
500
200
100
DC CURRENT GAIN : h
50
20
10
0.001 10
0.01 0.1 0.2 0.5 1 2 5
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain
vs. collector current ( ΙΙ )
200
(pF)
ob
100
50
20
COLLECTOR OUTPUT
CAPACITANCE : C
0.05 0.1 0.250.51012 5102050
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
25°C
Ta=100°C
−25°C
VCE=2V
Ta=25°C
I
E
=0A
f=1MHz
Data Sheet
5
VCE=2V
2
1
0.5
0.2
0.1
0.05
0.01
COLLECTOR CURRENT : Ic (A)
0.001
0.5 1 1.5 2
BASE TO EMITTER VOLTAGE : VBE (V)
Ta=100˚C
Fig.3 Grounded emitter propagation
characteristics
100
(V)
50
CE(sat)
20
10
0.5
COLLECTOR SATURATION
VOLTAGE : V
0.2
0.01 0.1 0.2
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
10
5
Ic max (pulse)
2
DC
1
500m
200m
100m
50m
20m
10m
Ta=25°C
5m
COLLECTOR CURRENT : Ic (A)
Single
Nonrepetitive
2m
Pulse
1m
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (A. S. O)
2SD2143 (CPT)
25˚C
IC/IB=1000
Pw=100mS
C
−25˚
0.5
11225510
Pw=1mS
Pw=10mS
Ta=25°C
500
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○c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.C
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