ROHM 2SD2142K Technical data

2SD2142K

Transistors

High-gain Amplifier Transistor (30V, 0.3A)

2SD2142K

zFeatures

1) Darlington connection for a high h
(DC current gain = 5000 (Min.) at V

2) High input impedance.

z

Inner circuit

E

: Emitter

C

: Collector

B

: Base

C

B

E

z

Absolute maximum ratings

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation

Junction temperature
Storage temperature

Parameter Symbol

(T a=25°C)

V
V
V

Tstg

FE.

CE = 3V , IC = 10mA)

CBO
CER
EBO

I

C

P

C

Tj

Limits

30
30
10

0.3

0.2

150

−55 to +150

z

Dimensions

SMT3

(1)Emitter
(2)Base
(3)Collector

Unit

V
V
V
A

W

°C
°C

(Unit : mm)

2.9

(3)

(2)

0.95 0.95

1.9

0.4

1.1

0.8

1.6

2.8

(1)

0.15

Each lead has same dimensions

0.3Min.

z

Electrical characteristics

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

DC current
Collector-emitter saturation voltage

Transition frequency

Output capacitance

∗

Transition frequency of the device.

Parameter Symbol Min. Typ. Max. Unit Conditions

transfer ratio

(T a=25°C)

BV

CBO

BV

CES

BV

EBO

I

CBO

I

EBO

FE1

h
h

FE2

V

CE(sat)

V

BE(on)

f

T

Cob

30

−

−

V

I

C

30

−

5.4

−

−

−

0.1

−

−

0.1

−

−

−

−

10

−

−

5000 −−−

10000

−−1.5 V IC/IB=100mA/0.1mA

−−2VVCE/IC=5V/100mABase-emitter voltage

−

200

−

V
V

µA
µA

−

MHz

pF

=10µA

C

=100mA

I

E

=10µA

I
VCB=30V

EB

=10V

V
V

CE/IC

=5V/10mA

V

CE/IC

=5V/100mA

CE

=5V , IE=−10mA , f=100MHz

V
V

CB

=10V , IE=0A , f=1MHz

∗

z

Packaging specifications and h

Type 2SD2142K

Package

h

FE

Basic ordering unit (pieces)

Code

SMT3

5k~
T146
3000

FE

Rev.B 1/2

2SD2142K

Transistors

z

Electrical characteristics curves

500

Ta=25

°C

400

300

200

100

COLLECTOR CURRENT : Ic (mA)

0

0 1.0
COLLECTOR - EMITTER VOLTAGE : V

18

16

Fig.1 Typical output characteristics ( Ι )

100k

50k

FE

20k

10k

5k

DC CURRENT GAIN : h

2k

1k

0.1 5.0 10 20 50 100 200 500 10000.2 0.5 1.0 2.0
COLLECTOR CURRENT : IC (mA)

VCE=10V

Fig.4 DC current gain vs. collector current ( Ι )

(V)

Ta=25

°C

2.2
IC/IB=1000

BE(sat)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1 2 51020 50

BASE EMITTER SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (mA)

Fig.7 Base emitter saturation voltage
vs. collector current

100 200 500

20

14
12

10

8.0

6.0

4.0

2.0

IB=0µA

CE

Ta=25°C

5V

3V

2.0

(V)

100

Ta=25

°C

2.4

80

60

40

20

COLLECTOR CURRENT : Ic (mA)

0

0 1.0
COLLECTOR - EMITTER VOLTAGE : V

2.0

2.0 3.0 4.0 5.0

Fig.2 Typical output characteristics ( ΙΙ )

100k

Ta=25

°C

VCE=5V

50k

FE

20k

10k

5k

DC CURRENT GAIN : h

2k

1k

0.1 5.0 10 20 50 100 200 500 10000.2 0.5 1.0 2.0

Ta=25

°C

Ta=−55

°C

COLLECTOR CURRENT : IC (mA)

Fig.5 DC current gain vs. collector current ( ΙΙ )

1000

Ta=25

°C

VCE=5V

500

200

100

50

20

1000

10

1.0 10 20 50 100 200 500 10005.02.0

CURRENT GAIN-BANDWIDTH PRODUCT (MHz)

COLLECTOR CURRENT : IC (mA)

Fig.8 Current gain-bandwidth product
vs. collector current

1.8

1.6

1.2

0.8

0.4

0.2
IB=0µA

2.2

Ta=25

(V)

BE(on)

BASE EMITTER VOLTAGE : V

CE

(V)

(V)

CE(sat)

COLLECTOR EMITTER SATURATION VOLTAGE : V

Fig.6 Collector emitter saturation voltage
vs. collector current

100

CAPACITANCE (pF)

°C

VCE=5V

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1.0 2.0 5.0 10 20 50
COLLECTOR CURRENT : IC (mA)

Fig.3 Base emitter 'ON' voltage
vs. collector current

1.8

Ta=25

°C

IC/IB=1000

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

1.0 2.0 5.0 10 20 50
COLLECTOR CURRENT : IC (mA)

Ta=25

°C

f=1MHz

50

20

10

5

2

1

0.5

Cib

Cob

12 51020 50

REVERSE BIAS VOLTAGE (V)

100 200 500

100 200 500

1000

1000

Fig.9 Capacitance vs. reverse bias voltage

Rev.B 2/2

Appendix

Notes

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Application circuit diagrams and circuit constants contained herein are shown as examples of standard
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Appendix1-Rev2.0