ROHM 2SD2142K Technical data
2SD2142K
Transistors
High-gain Amplifier Transistor (30V, 0.3A)
2SD2142K
zFeatures
1) Darlington connection for a high h
(DC current gain = 5000 (Min.) at V
2) High input impedance.
z
Inner circuit
E
: Emitter
C
: Collector
B
: Base
C
B
E
z
Absolute maximum ratings
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Parameter Symbol
(T a=25°C)
V
V
V
Tstg
FE.
CE = 3V , IC = 10mA)
CBO
CER
EBO
I
C
P
C
Tj
Limits
30
30
10
0.3
0.2
150
−55 to +150
z
Dimensions
SMT3
(1)Emitter
(2)Base
(3)Collector
Unit
V
V
V
A
W
°C
°C
(Unit : mm)
2.9
(3)
(2)
0.95 0.95
1.9
0.4
1.1
0.8
1.6
2.8
(1)
0.15
Each lead has same dimensions
0.3Min.
z
Electrical characteristics
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗
Transition frequency of the device.
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
(T a=25°C)
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
FE1
h
h
FE2
V
CE(sat)
V
BE(on)
f
T
Cob
30
−
−
V
I
C
30
−
5.4
−
−
−
0.1
−
−
0.1
−
−
−
−
10
−
−
5000 −−−
10000
−−1.5 V IC/IB=100mA/0.1mA
−−2VVCE/IC=5V/100mABase-emitter voltage
−
200
−
V
V
µA
µA
−
MHz
pF
=10µA
C
=100mA
I
E
=10µA
I
VCB=30V
EB
=10V
V
V
CE/IC
=5V/10mA
V
CE/IC
=5V/100mA
CE
=5V , IE=−10mA , f=100MHz
V
V
CB
=10V , IE=0A , f=1MHz
∗
z
Packaging specifications and h
Type 2SD2142K
Package
h
FE
Basic ordering unit (pieces)
Code
SMT3
5k~
T146
3000
FE
Rev.B 1/2
2SD2142K
Transistors
z
Electrical characteristics curves
500
Ta=25
°C
400
300
200
100
COLLECTOR CURRENT : Ic (mA)
0
0 1.0
COLLECTOR - EMITTER VOLTAGE : V
18
16
Fig.1 Typical output characteristics ( Ι )
100k
50k
FE
20k
10k
5k
DC CURRENT GAIN : h
2k
1k
0.1 5.0 10 20 50 100 200 500 10000.2 0.5 1.0 2.0
COLLECTOR CURRENT : IC (mA)
VCE=10V
Fig.4 DC current gain vs. collector current ( Ι )
(V)
Ta=25
°C
2.2
IC/IB=1000
BE(sat)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1 2 51020 50
BASE EMITTER SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (mA)
Fig.7 Base emitter saturation voltage
vs. collector current
100 200 500
20
14
12
10
8.0
6.0
4.0
2.0
IB=0µA
CE
Ta=25°C
5V
3V
2.0
(V)
100
Ta=25
°C
2.4
80
60
40
20
COLLECTOR CURRENT : Ic (mA)
0
0 1.0
COLLECTOR - EMITTER VOLTAGE : V
2.0
2.0 3.0 4.0 5.0
Fig.2 Typical output characteristics ( ΙΙ )
100k
Ta=25
°C
VCE=5V
50k
FE
20k
10k
5k
DC CURRENT GAIN : h
2k
1k
0.1 5.0 10 20 50 100 200 500 10000.2 0.5 1.0 2.0
Ta=25
°C
Ta=−55
°C
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current ( ΙΙ )
1000
Ta=25
°C
VCE=5V
500
200
100
50
20
1000
10
1.0 10 20 50 100 200 500 10005.02.0
CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
COLLECTOR CURRENT : IC (mA)
Fig.8 Current gain-bandwidth product
vs. collector current
1.8
1.6
1.2
0.8
0.4
0.2
IB=0µA
2.2
Ta=25
(V)
BE(on)
BASE EMITTER VOLTAGE : V
CE
(V)
(V)
CE(sat)
COLLECTOR EMITTER SATURATION VOLTAGE : V
Fig.6 Collector emitter saturation voltage
vs. collector current
100
CAPACITANCE (pF)
°C
VCE=5V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.0 2.0 5.0 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.3 Base emitter 'ON' voltage
vs. collector current
1.8
Ta=25
°C
IC/IB=1000
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0 2.0 5.0 10 20 50
COLLECTOR CURRENT : IC (mA)
Ta=25
°C
f=1MHz
50
20
10
5
2
1
0.5
Cib
Cob
12 51020 50
REVERSE BIAS VOLTAGE (V)
100 200 500
100 200 500
1000
1000
Fig.9 Capacitance vs. reverse bias voltage
Rev.B 2/2
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