ROHM 2SD1834 Technical data

1

2

Medium Power Transistor (60V, 1A)

2SD1834

Features Dimensions (Unit : mm)

1) Darlington connection for high DC current gain
(typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A)

2) High input impedance.

Inner circuit

C

B

MPT3

(1)Base
(2)Collector
(3)Emitter

4.5

1.6

(3)(2)(1)

0.5

1.51.5

3.0

1.5

0.5

2.5

4.0

0.4

1.0

0.40.4

B

: Base

C

: Collector

E

: Emitter

E

Absolute maximum ratings (Ta=25C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation
Junction temperature

Storage temperature

∗

1

∗

2

∗

3

Parameter Symbol

Single pulse Pw=100ms
RBE=0Ω
Mounted on a 40×40×t0.7mm ceramic substrate

V
V
V

Tstg

CBO
CES
EBO

I

P

Tj

C

C

Limits

60
60

7
1
2 A(Pulse)

0.5
2

∗3

150

−55 to +150

Electrical characteristics (Ta=25C)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance

Measured using pulse current.

∗

Parameter Symbol Min. Typ. Max. Unit Conditions

BV
BV
BV

V

I

CBO

I

EBO

h

CE(sat)

f

Cob

CBO
CEO
EBO

FE

T

Unit

V

∗

V
V

A(DC)

∗

W

°C
°C

60

−

−

60

−

7

−

−

−

−

2000 −− −V

−

−

0.9

−

−

1.5

150

7

V

−

V

−

V

1

μA

1

μA

V

−

MHz

−

pF

C

=50μA

I
I

C

=100μA , RBE=0Ω

E

=50μA

I

CB

=60V

V
VEB=6V

CE/IC

=3V/500mA

C/IB

=500mA/500μA

I
VCE=5V , IE= −10mA , f=100MHz
V

CE

=10V , IE=0A , f=1MHz

∗

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2010.02 - Rev.B

V)

s

n

nt

2

V)

e

0

)

V)

Data Sheet 2SD1834

 Packaging specifications and h

Type 2SD1834

Package

h

FE

Marking

Code

Basic ordering unit (pieces)

∗

Denotes h

FE

MPT3

2k~

DE∗

T100

1000

Electrical characteristics curves

0.5

(A)

C

COLLECTOR CURRENT : I

P

C

0.4

0.3

0.2

0.1

0

COLLECTOR TO EMITTER VOLTAGE : VCE (

=0.5W

123450

Fig.1 Ground emitter output characteristic

Ta=25

10μA

9μA

I

B

8μA
7μA

6μA
5μA

4μA
3μA

2μA
1μA

=0μA

°C

10

(

5

CE(sat)

2

I

1

0.5

0.2

0.1

COLLECTOR SATURATION VOLTAGE : V

0.01 0.02 0.05 0.1 0.2 0.5 1.0
COLLECTOR CURRENT : IC (A)

Fig.4 Collector-emitter saturation voltag
vs. collector current

C/IB

Ta=25°C

=1000

500

FE

1

0.5

(A)

C

0.2

0.1

0.05

COLLECTOR CURRENT : I

0.02

0.01

0.4 0.8 1.2 1.6 2.0 2.4 2.80

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Ground emitter propagatio

characteristics

50

20
10

5

2
1

0.5

COLLECTOR OUTPUT CAPACITANCE : Cob (pF

0.5

12 5 1020 5010

COLLECTOR TO BASE VOLTAGE : VCB(V)

Fig.5 Collector output capacitance

vs. collector-base voltage

Ta=25
V

CE

=3V

Ta=25°C
f=1MHz
I

E

=0A

°C

500k

200k
100k

FE

50k

20k
10k

5k

DC CURRENT GAIN : h

2k
1k

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
COLLECTOR CURRENT : IC (A)

Ta=25

VCE=5V

3V

°C

Fig.3 DC current gain vs. collector curre

Ic Max Pulse

2

Ic Max

1

(A)

C

0.5

DC

0.2

0.1

Ta=25°C
∗Single

0.05

COLLECTOR CURRENT : I

nonrepetitive
pulse

0.5

1 2 5 10 20 50 100

COLLECTOR TO EMITTER VOLTAGE : VCE (

Pw=10ms

Pw=100ms

Fig.6 Safe operating area

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2010 ROHM Co., Ltd. All rights reserved.

2010.02 - Rev.B