1
2
Medium Power Transistor (60V, 1A)
2SD1834
Features Dimensions (Unit : mm)
1) Darlington connection for high DC current gain
(typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A)
2) High input impedance.
Inner circuit
C
B
MPT3
(1)Base
(2)Collector
(3)Emitter
4.5
1.6
(3)(2)(1)
0.5
1.51.5
3.0
1.5
0.5
2.5
4.0
0.4
1.0
0.40.4
B
: Base
C
: Collector
E
: Emitter
E
Absolute maximum ratings (Ta=25C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
1
∗
2
∗
3
Parameter Symbol
Single pulse Pw=100ms
RBE=0Ω
Mounted on a 40×40×t0.7mm ceramic substrate
V
V
V
Tstg
CBO
CES
EBO
I
P
Tj
C
C
Limits
60
60
7
1
2 A(Pulse)
0.5
2
∗3
150
−55 to +150
Electrical characteristics (Ta=25C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Measured using pulse current.
∗
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
BV
BV
V
I
CBO
I
EBO
h
CE(sat)
f
Cob
CBO
CEO
EBO
FE
T
Unit
V
∗
V
V
A(DC)
∗
W
°C
°C
60
−
−
60
−
7
−
−
−
−
2000 −− −V
−
−
0.9
−
−
1.5
150
7
V
−
V
−
V
1
μA
1
μA
V
−
MHz
−
pF
C
=50μA
I
I
C
=100μA , RBE=0Ω
E
=50μA
I
CB
=60V
V
VEB=6V
CE/IC
=3V/500mA
C/IB
=500mA/500μA
I
VCE=5V , IE= −10mA , f=100MHz
V
CE
=10V , IE=0A , f=1MHz
∗
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2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.B
V)
s
n
nt
2
V)
e
0
)
V)
Data Sheet 2SD1834
Packaging specifications and h
Type 2SD1834
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
∗
Denotes h
FE
MPT3
2k~
DE∗
T100
1000
Electrical characteristics curves
0.5
(A)
C
COLLECTOR CURRENT : I
P
C
0.4
0.3
0.2
0.1
0
COLLECTOR TO EMITTER VOLTAGE : VCE (
=0.5W
123450
Fig.1 Ground emitter output characteristic
Ta=25
10μA
9μA
I
B
8μA
7μA
6μA
5μA
4μA
3μA
2μA
1μA
=0μA
°C
10
(
5
CE(sat)
2
I
1
0.5
0.2
0.1
COLLECTOR SATURATION VOLTAGE : V
0.01 0.02 0.05 0.1 0.2 0.5 1.0
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltag
vs. collector current
C/IB
Ta=25°C
=1000
500
FE
1
0.5
(A)
C
0.2
0.1
0.05
COLLECTOR CURRENT : I
0.02
0.01
0.4 0.8 1.2 1.6 2.0 2.4 2.80
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagatio
characteristics
50
20
10
5
2
1
0.5
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
0.5
12 5 1020 5010
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.5 Collector output capacitance
vs. collector-base voltage
Ta=25
V
CE
=3V
Ta=25°C
f=1MHz
I
E
=0A
°C
500k
200k
100k
FE
50k
20k
10k
5k
DC CURRENT GAIN : h
2k
1k
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
COLLECTOR CURRENT : IC (A)
Ta=25
VCE=5V
3V
°C
Fig.3 DC current gain vs. collector curre
Ic Max Pulse
2
Ic Max
1
(A)
C
0.5
DC
0.2
0.1
Ta=25°C
∗Single
0.05
COLLECTOR CURRENT : I
nonrepetitive
pulse
0.5
1 2 5 10 20 50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (
Pw=10ms
Pw=100ms
Fig.6 Safe operating area
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2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.B
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R1010
A
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