Transistors
Small signal low frequency amplifier
(50V, 100mA)
2SC61 14
zApplications
Small signal low frequency amplifier
zFeatu res
1) Low Cob.
Cob=2.0pF (Typ.)
2) Complements the 2SA2199.
zStructure
NPN silicon epitaxial
planar transistor
zDimensions (Unit : mm)
zAbsolute maximum (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
VMN3
(1) Base
(2) Emitter
(3) Collector
0.22
0.1
0.8
1.0
0.1
(1) (2)
0.17
0.35
0.6
Abbreviated symbol : N
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
CP
P
Tj
Tstg
C
∗1
∗2
D
50 V
50
5
100I
200
150
150
−55 to +150
0.16
(3)
0.37
V
V
mA
mW
°C
°C
2SC6114
1/3
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
FE RANK
h
Rank Q R
FE
h
zElectrical characterristic curves
100
mA)
10
120 to 270 180 to 390
Ta=125˚C
25˚C
−40˚C
VCE= −6V
BV
BV
BV
I
I
V
CE(sat)
Cob
CBO
EBO
h
f
CEO
CBO
EBO
FE
T
1000
FE
Min.
50
50
5
−
−
−
120
−
−
Ta=25˚C
Typ. Max. Unit Conditions
130
1.0
−
−
−
−
−
−
−
0.1
−
0.1
−
0.3
−
390
MHz
−
−
VCE= 6V
2V
C
=1mA
VI
V
C
=50µA
I
V
I
E
=50µA
µA
µA
pF
CB
V
VEB=5V
V
C/IB
I
CE
−
V
CE
V
CE
V
=50V
=25mA/2.5mA
=6V, IC=2mA
=10V, IE=−1mA, f=100MHz
=10V, IE=0A, f=1MHz
1000
Ta=125˚C
25˚C
FE
−40˚C
2SC6114
VCE=6V
1
COLLECTOR CURRENT : Ic (
0.1
0.1 1 10
BASE TO EMITTER VOLTAGE : V
BE
Fig.1 Grounded emitter propagation
characteristics
1
Ta=125˚C
V)
0.1
(
CE(sat)
COLLECTOR EMITTER SATURATION
VOLTAGE : V
0.01
25˚C
−40˚C
0.1 1 10 100
COLLECTOR CURRENT : I
Ic/Ib=10/1
C
(
mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
DC CURRENT GAIN : h
(
V)
100
10
0.1 1 10 100
COLLECTOR CURRENT : IC (
mA)
Fig.2 DC current gain vs.
collector current (Ι)
10
pF)
1
0.01 0.1 1 10 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
Fig.5 Collector output capacitance
Ta=25˚C
f=1MHz
I
E
=
0A
100
DC CURRENT GAIN : h
10
0.1 1 10 100
COLLECTOR CURRENT : IC (
mA)
Fig.3 DC current gain vs.
collector current (ΙΙ)
50
Ta=25˚C
mA)
40
(
C
30
20
10
COLLECTOR CURRENT : I
0 12345678910
COLLECTOR TO EMITTER VOLTAGE : VCE (
IB=200uA
IB=150uA
IB=100uA
IB=50uA
Fig.6 Typical output characteristics
V)
2/3
Transistors
10
V)
(
Ta=125˚C
BE(sat)
BASE-EMITTER SATURATION
VOLTAGE : V
0.1
25˚C
−40˚C
1
0.1 1 10 100
COLLECTOR CURRENT : I
Fig.7 Base-emitter saturation
voltage vs. collector current
Ic/Ib=10/1
C
(
mA)
1000
Ta=25°C
=10V
V
CE
f=100MHz
100
TRANSITION FREQUENCY : FT (MHZ)
10
0.1 1 10 100
EMITTER CURRENT : I
Fig.8 Transition frequency
2SC6114
E (mA)
3/3
Appendix
Notes
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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Appendix1-Rev2.0
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