ROHM 2SAR554R User Manual

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©2010 ROHM Co., Ltd. All rights reserved.

Midium Power Transistors (-80V / -1.5A)

(

(2)

(3)

2SAR554R

 Features  Dimensions (Unit : mm)

1) Low saturation voltage, typically
V

= -0.4V (Max.) (IC / IB= -500mA / -25mA)

CE (sat)

2) High speed switching

 Structure

PNP Silicon epitaxial planar transistor

TSMT3

(3)

(1) (2)

 Applications

Driver

 Packaging specifications

Package TSMT3

Type

Code TL
Basic ordering unit (pieces) 3000

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage

Collector current

DC I

Pulsed I

V

Power dissipation

Junction temperature T

Range of storage temperature T

*1 Pw=10ms, Single Pulse

*2 Mounted on a recommended land.

*3 Mounted on a 40 x 40 x 0.7[mm] ceramic substrate.

CBO

CEO

EBO

CP

P

P

C

D

D

j

stg

-80 V

-80 V

-1.5 A

*1

*2

0.5 W

*3

1.0 W

150 C

-55 to 150 C

-6 V

-3 A

 Inner circuit

(1) Base
(2) Emitter
(3) Collector

Abbreviated symbol : MH

(2)

1)

(3)

1/5

2010.07 - Rev.A

Data Sheet

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2SAR554R

_

 Electrical characteristic (Ta = 25C)

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter staturation voltage

DC current gain

Transition frequency

Turn-on time

Storage time

Fall time

*1 See switching time test circuit

Symbol Min. Typ. Max. Unit

BV

BV

BV

I

I

V

CE(sat)

CBO

EBO

h

f

C

t

t

stg

t

CEO

CBO

EBO

FE

T

ob

on

-80 - - V

-80 - - V

-6 - - V

---1

---1

- -200 -400 mV

120 - 390 -

-

-15Collector output capacitance

-50-ns

*1

- 300 - ns

*1

-50-ns

*1

f

A

A

MHz340 -

-

pF

ConditionsParameter

= -1mA

I

C

= -100μA

I

C

= -100μA

I

E

= -80V

V

CB

= -4V

V

EB

= -500mA, IB= -25mA

I

C

= -3V, IC= -100mA

V

CE

= -10V

V

CE

I

=200mA, f=100MHz

E

= -10V, IE=0A

V

CB

f=1MHz

I

= -0.7A, IB1= -70mA,

C

I

=70mA, V

B2

CC

~

-10V

2/5

2010.07 - Rev.A

2SAR554R

O

 Electrical characteristic curves (Ta = 25C)

Data Sheet

A]

COLLECTOR CURRENT :I

C[

-0.50

-0.40

-0.30

-0.20

-0.10

N :hFE

DC CURRENT GAI

0.00

1000

100

Fig.1 Typical Output Characteristics

-5.0mA

-2.5mA

-4.0mA

COLECTOR TO EMITTER VOL TAGE:VCE[V]

Fig.3 DC Current Gain vs. Collector Current(Ⅱ)

VCE=-3V

Ta=125℃

75℃
25℃

-40℃

-2.0mA

-1.5mA

-1.0mA

-0.5mA

Fig.2 DC Current Gain vs. Collector Current (Ⅰ)

1000

Ta=25℃

100

DC CURRENT GAIN :hFE

10

-2.0 -1.5 -1.0 -0.5 0.0

-1 -10 -100 -1000 -10000

VCE=-5V

-3V

COLLECTOR CURRENT :IC[mA]

Fig.4 Collector-Emitter Saturation Voltage

vs. Collector Current(Ⅰ)

-1

Ta=25℃

(sat)[V]

CE

LTAGE :V

-0.1

IC/IB=50

20
10

10

-1 -10 -100 -1000 -10000

COLLECTOR CURRENT :IC[mA]

Fig.5 Collector-Emitter Saturation Voltage vs.Collector Current ( Ⅱ)

-1
IC/IB=20

(sat)[V]

CE

-0.1

Ta=125℃

75℃
25℃

COLLECTOR SATURATION VOLTAGE :V

-0.01

-1 -10 -100 -1000 -10000

COLLECTOR CURRENT :IC[mA]

-40℃

COLLECTOR SATURATION V

-0.01

-1 -10 -100 -1000 -10000

COLLECTOR CURRENT :IC[mA]

Fig.6 Ground Emitter Propagation Characteristi cs

-10000
VCE=-3V

-1000

[mA]

C

-100

-10

COLLECTOR CURRENT :I

Ta=125℃

75℃
25℃

-40℃

-1

BASE TO EMITTER VOLTAGE :VBE[V]

-1.4-0.9-0.4

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3/5

2010.07 - Rev.A

2SAR554R

Data Sheet

Fig.7 Emitter input capacitance vs. Emitter-Base Voltage
Collector output capacitance vs.Collector-Base Voltage

1000

Ta=25℃
f=1MHz
IE=0A
IC=0A

100

10

EMITTER INPUT CAPACITANCE : Cib(pF)

COLLECTOR OUTPUT CAPACITANCE : Cob(pF )

1

-0.1 -1 -10 -100
COLLECTOR - BASE VOLTAGE : VCB(V)

EMITTER - BASE VOLTAGE : VEB(V)

Cib

Cob

Fig8. Gain Bandwidth Product vs. Emitter Current

1000

Ta=25℃
VCE=-10V

[MHz]

T

100

TRANSITION FREQUENCY :f

10

10 100 1000

EMITTER CURRENT :IE[mA]

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4/5

2010.07 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

2SAR554R

_~_

 Switching time test circuit

V

IN

Pw

Pw 50μs

DUTY CYCLE≦1%

RL=15Ω

I

B1

I

C

VCC -10V

~

I

B2

I

B2

BASE CURENT WAVEFORM

COLLECTOR CURRENT WAVEFORM

90%

10%

I

B1

t

on

t

t

stg

f

I

C

5/5

2010.07 - Rev.A

Notes

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Examples of application circuits, circuit constants and any other information contained herein
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A