ROHM 2SAR554R User Manual
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©2010 ROHM Co., Ltd. All rights reserved.
Midium Power Transistors (-80V / -1.5A)
(
(2)
(3)
2SAR554R
Features Dimensions (Unit : mm)
1) Low saturation voltage, typically
V
= -0.4V (Max.) (IC / IB= -500mA / -25mA)
CE (sat)
2) High speed switching
Structure
PNP Silicon epitaxial planar transistor
TSMT3
(3)
(1) (2)
Applications
Driver
Packaging specifications
Package TSMT3
Type
Code TL
Basic ordering unit (pieces) 3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I
Pulsed I
V
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 40 x 40 x 0.7[mm] ceramic substrate.
CBO
CEO
EBO
CP
P
P
C
D
D
j
stg
-80 V
-80 V
-1.5 A
*1
*2
0.5 W
*3
1.0 W
150 C
-55 to 150 C
-6 V
-3 A
Inner circuit
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : MH
(2)
1)
(3)
1/5
2010.07 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
2SAR554R
_
Electrical characteristic (Ta = 25C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
*1 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
t
stg
t
CEO
CBO
EBO
FE
T
ob
on
-80 - - V
-80 - - V
-6 - - V
---1
---1
- -200 -400 mV
120 - 390 -
-
-15Collector output capacitance
-50-ns
*1
- 300 - ns
*1
-50-ns
*1
f
A
A
MHz340 -
-
pF
ConditionsParameter
= -1mA
I
C
= -100μA
I
C
= -100μA
I
E
= -80V
V
CB
= -4V
V
EB
= -500mA, IB= -25mA
I
C
= -3V, IC= -100mA
V
CE
= -10V
V
CE
I
=200mA, f=100MHz
E
= -10V, IE=0A
V
CB
f=1MHz
I
= -0.7A, IB1= -70mA,
C
I
=70mA, V
B2
CC
~
-10V
2/5
2010.07 - Rev.A
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