Datasheet 2SB0938, 2SB0938A Datasheet (Panasonic)

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Page 1

Po wer Transistors

Note) The part numbers in the parenthesis show conventional part number.

2SB0938, 2SB0938A (2SB938, 2SB938A)

Silicon PNP epitaxial planar type Darlington

Unit: mm

For power amplification and switching Complementary to 2SD1261 and 2SD1261A

Features

■

●

High foward current transfer ratio h

●

High-speed switching

●

N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage Collector to emitter voltage

2SB0938 2SB0938A 2SB0938

2SB0938A Emitter to base voltage Peak collector current Collector current Collector power dissipation

=25°C

Ta=25°C

Junction temperature Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency Turn-on time Storage time Fall time

Rank classification

FE2

Rank Q P

FE2

2000 to 5000

Symbol

2SB0938 2SB0938A 2SB0938 2SB0938A

2SB0938 2SB0938A

4000 to 10000

V I

stg

CBO

CEO

EBO

=25˚C)

Ratings

–60 –80 –60 –80

–5 –8 –4 40

1.3

150

–55 to +150

=25˚C)

Symbol

CBO

CEO

EBO

CEO

FE1

FE2

CE(sat)

stg

Internal Connection

VCB = –60V, IE = 0 VCB = –80V, IE = 0 VCE = –30V, IB = 0 VCE = –40V, IB = 0 VEB = –5V, IC = 0

IC = –30mA, IB = 0

VCE = –3V, IC = – 0.5A VCE = –3V, IC = –3A VCE = –3V, IC = –3A IC = –3A, IB = –12mA IC = –5A, IB = –20mA VCE = –10V, IC = – 0.5A, f = 1MHz

IC = –3A, IB1 = –12mA, IB2 = 12mA

Unit

V A A

˚C ˚C

Conditions

8.5±0.2

6.0±0.5

10.0±0.310.5min.

1.5max.

2.0 1.5±0.1

10.0±0.3

2.0

4.4±0.5

5.08±0.5 213

8.5±0.2

6.0±0.3

5.08±0.5

123

min

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

typ

–0.4

1.5

–60

–80 1000 2000

0.3

0.5

3.4±0.3

1:Base 2:Collector 3:Emitter N Type Package

3.4±0.3

1.0±0.1

R0.5 R0.5

0 to 0.4

1.1 max.

1:Base 2:Collector 3:Emitter N Type Package (DS)

max

–200 –200 –500 –500

–2

10000

–2.5

–2 –4

1.0±0.1

1.1max.

0.5max.

Unit: mm

–0.2

+0.4

3.0

14.7±0.5

4.4±0.5

Unit

µA

MHz

µs µs µs

Page 2

Power Transistor 2SB0938, 2SB0938A

PC—Ta IC—V

) W

(

(1)

(2)

Collector power dissipation P

(3)

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

–100

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.01

(1) TC=Ta (2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

=1.3W)

CE(sat)—IC

IC/IB=250

TC=100˚C

25˚C

– 0.1 –1 –10

– 0.03

– 0.3 –3

Collector current IC (A

)

–25˚C

)

–6

–5

) A

(

–4

–3

–2

TC=25˚C

IB=–3.0mA

–2.5mA

–2.0mA

–1.5mA

Collector current I

–1

0–5–4–1 –3–2

Collector to emitter voltage VCE (V

hFE—I

VCE=–3V

TC=100˚C

–25˚C

Forward current transfer ratio h

– 0.01

– 0.1 –1 –10

– 0.03

– 0.3 –3

Collector current IC (A

–1.0mA

– 0.5mA

– 0.4mA

– 0.3mA – 0.2mA

25˚C

)

IC—V

–10

–8

) A

(

Collector current I

)

–6

–4

–2

0 –3.2– 0.8 –2.4–1.6

TC=100˚C –25˚C

Base to emitter voltage VBE (V

Cob—V

10000

) pF

3000

(

1000

300

100

Collector output capacitance C

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector to base voltage VCB (V

25˚C

VCE=–3V

IE=0 f=1MHz T

=25˚C

)

Area of safe operation (ASO) R

–100

–30

)

–10

(

–3

–1

– 0.3

– 0.1

Collector current I

– 0.03

– 0.01

–1 –10 –100 –1000–3 –30 –300

Non repetitive pulse

=25˚C

t=1ms

300ms

2SB0938

10ms

2SB0938A

Collector to emitter voltage VCE (V

)

˚C/W

( (t)

–1

Thermal resistance R

–2

–4

–3

—t

th(t)

(1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

Time t (s

1010

110

)

Page 3

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2001 MAR