ROHM 2SAR542D User Manual
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©2010 ROHM Co., Ltd. All rights reserved.
Midium Power Transistors (-30V / -5A)
(
(2)
(3)
2SAR542D
Structure Dimensions (Unit : mm)
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage
V
= -0.4V (Max.) (IC / IB= -2A / -100mA)
CE (sat)
2) High speed switching
Applications
Driver
CPT3
(S C-63)
<SO T-428>
(1) Base
(2) Collector
(3) Emitter
6.5
5.1
0.75
0.9
0.9
2.3
(1)
(3)
(2)
2.3
0.5
1.5
5.5
0.65
2.3
1.5
2.5
0.8Min.
0.5
1.0
9.5
Packaging specifications
Package CPT3
Type
Code TL
Basic ordering unit (pieces) 2500
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I
Pulsed I
V
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Mounted on a substrate
=25°C
*3 T
C
CBO
CEO
EBO
CP
P
P
C
D
D
j
stg
-30 V
-30 V
*1
-10 A
*2
*3
150 °C
-55 to 150 °C
-6 V
-5 A
1W
10 W
Inner circuit (Unit : mm)
1)
(1) Base
(2) Collector
(3) Emitter
1/5
2010.12 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2SAR542D
_
Electrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
t
stg
t
CEO
CBO
EBO
FE
T
ob
on
-30 - - V
-30 - - V
-6 - - V
---1
---1
*1
- -200 -400 mV
200 - 500 -
*1
-
-pF40Collector output capacitance
-45-ns
*2
- 200 - ns
*2
-25-ns
*2
f
A
A
MHz240 -Transition frequency
-
Conditions
= -1mA
I
C
= -100μA
I
C
= -100μA
I
E
= -30V
V
CB
= -4V
V
EB
= -2A, IB= -100mA
I
C
= -2V, IC= -500mA
V
CE
VCE= -10V
I
=100mA, f=100MHz
E
V
= -10V, IE=0A
CB
f=1MHz
I
= -2.5A, IB1= -250mA,
C
I
=250mA, V
B2
CC
-10V
~
2/5
2010.12 - Rev.A
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