ROHM 2SA1862 Schematic [ru]
Transistors
z
z
z
z
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High-voltage Switching Transistor
(400V, 2A)
2SA1862
Features
1) High breakdown voltage. (BV
CEO
= 400V)
2) Low saturation voltage.
(Max.V
CE (sat)
= 0.5V at IC / IB = 500mA / 100mA)
3) High switching speed, typically tf = 0.4 Ps at I
4) Wide SOA (safe operating area).
Absolute maximum ratings (Ta=25qC)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
Single pulse, Pw=10ms
V
VCEO
VEBO
Tstg
CBO
IC
PC
Tj
Limits
−400
−400
−7
−2
−4
1
10
150
−55 to +150
C
= 1A.
Unit
A (DC)
A (Pulse)
W (Tc=25
V
V
V
∗
W
°C)
°C
°C
External dimensions (Unit : mm)
CPT3
(1)Base (Gate)
(2)Collector (Drain)
(3)Emitter (Source)
6.5
5.1
0.75
0.9
2.3
(1)
(2)
Abbreviated symbol : A1862
0.9
(3)
0.65
2SA1862
2.3
0.5
1.5
5.5
2.3
1.5
2.5
0.8Min.
0.5
1.0
9.5
z
Packaging specifications and h
Type 2SA1862
Package
h
FE
Code
Basic ordering unit (pieces)
Electrical characteristics (T a=25qC)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Parameter Symbol Min. Typ. Max. Unit Conditions
CPT3
P
TL
2500
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
ton − 0.2 −μsI
tstg − 1.8 −μsI
tf − 0.4 −μs
FE
I
V
−
−
−400
−400
−7
−
−
−
−−−1.2 V IC/IB= −0.5A/ −0.1A
82
−
−
−
−
−
−
−10
−
−10
−
−0.5
−
180
−
−
18
−
30
MHz
V
V
μA
μA
V
−
pF
C
= −50μA
C
= −1mA
I
I
E
= −50μA
V
CB
V
EB
I
C/IB
V
CE
V
CB
V
CE
C
=−1A, RL=150Ω
B1
V
CC
= −400V
= −5V
= −0.5A/ −0.1A
= −5V, IC= −0.1A
= −10V, IE=0.1A, f=5MHz
= −10V, IE=0A, f=1MHz
=−IB2= −0.2A
−
150V
Rev.B 1/2
Transistors
z
! !
Electrical characteristic curves
2SA1862
−0.5
Ta=25°C
(A)
C
−0.4
−0.3
−0.2
−0.1
COLLECTOR CURRENT : I
0
−20 −4 −6 −8 −10
I
B
= −
5.0mA
−
−4.5mA
−4.0mA
−3.5mA
−3.0mA
−2.5mA
−2.0mA
−1.5mA
1.0mA
−
0.5mA
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
(V)
(V)
−10
Ta=
25
CE(sat)
BE(sat)
BASE SAURATION VLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
Fig.4 Collector-emitter saturation voltage vs.
collector current
Base-emitter saturation voltage vs.
°C
−5
IC/IB=5
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−0.001 −0.002 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10−0.005
COLLECTOR CURRENT : IC (A)
V
BE(sat)
V
CE(sat)
collector current
−10
−5
(mA)
−2
C
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−0.005
COLLECTOR CURRENT : I
−0.002
−0.001
-0.20 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Ta=
V
25
°C
CE
= −
5V
Fig.2 Grounded emitter propagation characteristics
1000
500
(MHz)
T
200
100
50
20
10
5
TRANSITION FREQUENCY : f
2
1
0.001 0.002 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 100.005
EMITTER CURRENT : IE (A)
Ta
25
°C
=
10V
V
CE
=−
Fig.5 Gain bandwidth product vs. emitter current
1000
500
EF
200
100
50
20
10
DC CURRENT GAIN : h
5
2
1
−0.001 −0.002 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10−0.005
COLLECTOR CURRENT : IC (A)
Ta=
V
25
°C
CE
= −
5V
Fig.3 DC current gain vs. collector current
10000
(pF)
(pF)
ib
ob
5000
2000
1000
500
200
100
50
20
10
EMITTER INPUT CAPACITANCE : C
COLLECTOR OUTPUT SATURATION : C
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.6
Collector output capacitance vs. collector-bass voltage
C
C
Ta=
25
°C
f=1MHz
I
E
=0A
ib
ob
Emitter input capacitance vs. emitter-base voltage
−10
−5
(A)
C
−2
−1
−0.5
−0.2
−0.1
−0.05
COLLECTOR CURRENT : I
−0.02
−0.01
−1 −2 −5 −10 −20 −50 −100 −200 −500 −1000
ulse)∗
(P
I
C Max.
DC
Tc=
25
°C
∗Single
nonrepetitive
pulse
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
10ms∗
=
Pw
100ms∗
Fig.7 Safe operating area
10000
1000
(1)Using infinite heat sink
(2)Unmounted
100
10
1
0.1
0.01
0.001 0.01 0.1 1 10 100 1000
TRANSIENT THERMAL RESISTENCE : Rth (°C/W)
TIME : t (s)
Fig.8 Transient thermal resistance
!
(2)
(1)
Rev.B 2/2
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