Datasheet 2SA1862 Datasheet (ROHM) [ru]

Transistors

z

z

z

z

z

High-voltage Switching Transistor
(400V, 2A)

2SA1862

Features

1) High breakdown voltage. (BV

CEO

= 400V)

2) Low saturation voltage.
(Max.V

CE (sat)

= 0.5V at IC / IB = 500mA / 100mA)

3) High switching speed, typically tf = 0.4 Ps at I

4) Wide SOA (safe operating area).

Absolute maximum ratings (Ta=25qC)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation
Junction temperature

Storage temperature

∗

Single pulse, Pw=10ms

V
VCEO
VEBO

Tstg

CBO

IC

PC

Tj

Limits

−400

−400

−7

−2

−4

1

10

150

−55 to +150

C

= 1A.

Unit

A (DC)

A (Pulse)

W (Tc=25

V
V
V

∗

W

°C)
°C
°C

External dimensions (Unit : mm)

CPT3

(1)Base (Gate)
(2)Collector (Drain)
(3)Emitter (Source)

6.5

5.1

0.75

0.9

2.3

(1)

(2)

Abbreviated symbol : A1862

0.9

(3)

0.65

2SA1862

2.3

0.5

1.5

5.5

2.3

1.5

2.5

0.8Min.

0.5

1.0

9.5

z

Packaging specifications and h

Type 2SA1862

Package

h

FE

Code

Basic ordering unit (pieces)

Electrical characteristics (T a=25qC)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time

Parameter Symbol Min. Typ. Max. Unit Conditions

CPT3

P

TL

2500

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

Cob

ton − 0.2 −μsI

tstg − 1.8 −μsI

tf − 0.4 −μs

FE

I

V

−

−

−400

−400

−7

−

−

−

−−−1.2 V IC/IB= −0.5A/ −0.1A

82

−

−

−

−

−

−

−10

−

−10

−

−0.5

−

180

−

−

18

−

30

MHz

V
V

μA
μA

V

−

pF

C

= −50μA

C

= −1mA

I
I

E

= −50μA

V

CB

V

EB

I

C/IB

V

CE

V

CB

V

CE

C

=−1A, RL=150Ω

B1

V

CC

= −400V
= −5V

= −0.5A/ −0.1A

= −5V, IC= −0.1A
= −10V, IE=0.1A, f=5MHz
= −10V, IE=0A, f=1MHz

=−IB2= −0.2A

−

150V

Rev.B 1/2

Transistors

z

! !

Electrical characteristic curves

2SA1862

−0.5
Ta=25°C

(A)

C

−0.4

−0.3

−0.2

−0.1

COLLECTOR CURRENT : I

0

−20 −4 −6 −8 −10

I

B

= −

5.0mA

−

−4.5mA

−4.0mA

−3.5mA

−3.0mA

−2.5mA

−2.0mA

−1.5mA

1.0mA

−

0.5mA

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Ground emitter output characteristics

(V)

(V)

−10

Ta=

25

CE(sat)

BE(sat)

BASE SAURATION VLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

Fig.4 Collector-emitter saturation voltage vs.
collector current
Base-emitter saturation voltage vs.

°C

−5

IC/IB=5

−2

−1

−0.5

−0.2

−0.1

−0.05

−0.02

−0.01

−0.001 −0.002 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10−0.005

COLLECTOR CURRENT : IC (A)

V

BE(sat)

V

CE(sat)

collector current

−10

−5

(mA)

−2

C

−1

−0.5

−0.2

−0.1

−0.05

−0.02

−0.01

−0.005

COLLECTOR CURRENT : I

−0.002

−0.001

-0.20 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4

BASE TO EMITTER VOLTAGE : VBE (V)

Ta=
V

25

°C

CE

= −

5V

Fig.2 Grounded emitter propagation characteristics

1000

500

(MHz)

T

200
100

50

20
10

5

TRANSITION FREQUENCY : f

2
1

0.001 0.002 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 100.005

EMITTER CURRENT : IE (A)

Ta

25

°C

=

10V

V

CE

=−

Fig.5 Gain bandwidth product vs. emitter current

1000

500

EF

200
100

50

20
10

DC CURRENT GAIN : h

5

2
1

−0.001 −0.002 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10−0.005

COLLECTOR CURRENT : IC (A)

Ta=
V

25

°C

CE

= −

5V

Fig.3 DC current gain vs. collector current

10000

(pF)

(pF)

ib

ob

5000

2000
1000

500

200
100

50

20
10

EMITTER INPUT CAPACITANCE : C

COLLECTOR OUTPUT SATURATION : C

−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)

Fig.6

Collector output capacitance vs. collector-bass voltage

C

C

Ta=

25

°C

f=1MHz
I

E

=0A

ib

ob

Emitter input capacitance vs. emitter-base voltage

−10

−5

(A)

C

−2

−1

−0.5

−0.2

−0.1

−0.05

COLLECTOR CURRENT : I

−0.02

−0.01

−1 −2 −5 −10 −20 −50 −100 −200 −500 −1000

ulse)∗

(P

I

C Max.

DC

Tc=

25

°C

∗Single

nonrepetitive
pulse

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

10ms∗

=

Pw

100ms∗

Fig.7 Safe operating area

10000

1000

(1)Using infinite heat sink
(2)Unmounted

100

10

1

0.1

0.01

0.001 0.01 0.1 1 10 100 1000

TRANSIENT THERMAL RESISTENCE : Rth (°C/W)

TIME : t (s)

Fig.8 Transient thermal resistance

!

(2)

(1)

Rev.B 2/2

Appendix

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

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(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safetydevices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1