ROHM 2SA1576UB Schematic [ru]

(50V, 0.15A)
2SA1576UB
zApplications zDimensions (Unit : mm) General purpose small signal amplifier.
zFeatures
1) Excellent h
FE linearity.
2) Complements the 2SA1576A.
zStructure PNP silicon epitaxial planar transistor.
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Power dissipation Junction temperature Range of storage temperature
1 Pw=1ms Single pulse2 Each terminal mounted on a recommended land
Symbol Limits Unit
zElectrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
CBO
V VCEO VEBO
IC ICP PD
Tj
Tstg
60 V
50
6
150
1
200
2
200 150
55 to +150
Typ. Max. Unit Conditions
Min.
50
60
6
82
100
100
0.5
560
140
4.0
5.0
(1) Base (2) Emitter (3) Collector
∗ = Denotes h
V
V mA mA
mW
˚C ˚C
V VI
V nA nA
V
MHz
pF
UMT3F
0.4250.425
2.1
1.25
FE
C
= −1mA
I
C
= −50µA
I
E
= −50µA
CB
= −60V
V V
EB
= −6V
I
C/IB
= −50mA/5mA
CE
= −6V, IC= −1mA
V
CE
= −12V, IE=2mA, f=100MHz
V V
CB
= −12V, IE=0A, f=1MHz
2.0
0.32 (3)
(1) (2)
0.65 0.65
1.3
Abbreviated symbol : F
0.9
0.530.53
0.13
Each lead has same dimensions
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2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.B
mA)
)
characteristics (I)
.0
)
5
)
500
0
DC CURRENT GAIN : h
500
0
DC CURRENT GAIN : h
I)
0
)
voltage vs. collector current (II)
0
0
1000
.
)
20
h
FE rank categories
Rank Q R S
FE 120 to 270
h
zElectrical characteristic curves
50 Ta=100˚C
20
10
5
2
1
0.5
COLLECTOR CURRENT : Ic (
0.2
0.1
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (
Fig.1 Grounded emitter propagation
characteristics
Ta=25˚C
FE
200
100
50
0.2 0.5 1 2 5 10 20 50 10 COLLECTOR CURRENT : IC (
Fig.4 DC current gain vs.
1
V)
(
CE(sat)
0.5
0.2
0.1
0.05
0.2 0.5 1 2 5 10 20 50 10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (
Fig.7 Collector-emitter saturation
P
82 to 180 180 to 390 270 to 560
25˚C
40˚C
VCE= 5V
3V
1V
collector current (I)
Ta=100˚C
25˚C
40˚C
VCE= 6V
mA)
lC/lB=10
mA)
Data Sheet 2SA1576UB
10 Ta=25˚C
8
mA)
(
C
6
4
2
COLLECTOR CURRENT : I
0.4
0.8 1.6 2
V
COLLECTOR TO MITTER VOLTAGE : VCE (
Fig.2 Grounded emitter output
Ta=100˚C
25˚C
FE
200
100
50
0.2 0.5 1 2 5 10 20 50 10 COLLECTOR CURRENT : IC (
40˚C
Fig.5 DC current gain vs.
collector current (II)
500
MHz)
(
T
200
100
50
TRANSITION FREQUENCY : f
0.5 20
12 510
EMITTER CURRENT : I
Fig.8 Gain bandwidth product vs.
emitter current
35.0
31.5
28.0
24.5
21.0
17.5
14.0
10.5
7.0
3.5µA
B
=0
1.20
I
V
100 Ta=25˚C
)
500
mA
(
450
80
C
400
350
300
60
40
20
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : VCE (
3 421
250
200
150
100
50µA
IB=0
V
Fig.3 Grounded emitter output
characteristics (II)
1
IC/IB=
50
20 10
0.2 0.5 1 2 5 10 20 50 10 COLLECTOR CURRENT : IC (
Ta=25˚C
mA)
VCE= 6V
mA)
V
(
CE(sat)
0.5
0.2
0.1
0.05
COLLECTOR SATURATION VOLTAGE : V
Fig.6 Collector-emitter saturation
voltage vs. collector current (
pF)
pF)
10
5
2
COLLECTOR TO BASE VOLTAGE : VCB (V
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
EMITTER TO BASE VOLTAGE : VEB (V)
Cib
Cob
0.5 20
1 2 5 10
Ta=25˚C
f=1MHz
I
E
I
C
=0A =0A
Ta=25˚C
V
E
(
mA)
CE
= 12V
50 10
Fig.9 Collector output capacitance vs
collector-base voltage Emitter inputcapacitance vs. emitter-base voltage
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2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.B
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