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General purpose small signal amplifier
(50V, 0.15A)
2SA1576UB
zApplications zDimensions (Unit : mm)
General purpose small signal amplifier.
zFeatures
1) Excellent h
FE linearity.
2) Complements the 2SA1576A.
zStructure
PNP silicon epitaxial planar transistor.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
Symbol Limits Unit
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
CBO
V
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
−60 V
−50
−6
−150
∗1
−200
∗2
200
150
−
55 to +150
Typ. Max. Unit Conditions
Min.
−50
−60
−6
82
−
−
−
−
−
−
−
−
−100
−
−
−100
−
−
−0.5
−
560
−
140
−
4.0
−
5.0
(1) Base
(2) Emitter
(3) Collector
∗ = Denotes h
V
V
mA
mA
mW
˚C
˚C
V
VI
V
nA
nA
V
−
MHz
pF
UMT3F
0.4250.425
2.1
1.25
FE
C
= −1mA
I
C
= −50µA
I
E
= −50µA
CB
= −60V
V
V
EB
= −6V
I
C/IB
= −50mA/−5mA
CE
= −6V, IC= −1mA
V
CE
= −12V, IE=2mA, f=100MHz
V
V
CB
= −12V, IE=0A, f=1MHz
2.0
0.32
(3)
(1) (2)
0.65 0.65
1.3
Abbreviated symbol : F
0.9
0.530.53
0.13
Each lead has same dimensions
∗
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.B
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voltage vs. collector current (II)
h
FE rank categories
Rank Q R S
FE 120 to 270
h
zElectrical characteristic curves
−50
Ta=100˚C
−20
−10
−5
−2
−1
−0.5
COLLECTOR CURRENT : Ic (
−0.2
−0.1
−0.2
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (
Fig.1 Grounded emitter propagation
characteristics
Ta=25˚C
FE
200
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
COLLECTOR CURRENT : IC (
Fig.4 DC current gain vs.
−1
V)
(
CE(sat)
−0.5
−0.2
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (
Fig.7 Collector-emitter saturation
P
82 to 180 180 to 390 270 to 560
25˚C
−40˚C
VCE= −5V
−3V
−1V
collector current (I)
Ta=100˚C
25˚C
−40˚C
VCE= −6V
mA)
lC/lB=10
mA)
Data Sheet 2SA1576UB
−10
Ta=25˚C
−8
mA)
(
C
−6
−4
−2
COLLECTOR CURRENT : I
−0.4
−0.8 −1.6 −2
V
COLLECTOR TO MITTER VOLTAGE : VCE (
Fig.2 Grounded emitter output
Ta=100˚C
25˚C
FE
200
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
COLLECTOR CURRENT : IC (
−40˚C
Fig.5 DC current gain vs.
collector current (II)
500
MHz)
(
T
200
100
50
TRANSITION FREQUENCY : f
0.5 20
12 510
EMITTER CURRENT : I
Fig.8 Gain bandwidth product vs.
emitter current
−35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−3.5µA
B
=0
−1.20
I
V
−100
Ta=25˚C
)
−500
mA
(
−450
−80
C
−400
−350
−300
−60
−40
−20
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : VCE (
−3 −4−2−1
−250
−200
−150
−100
−50µA
IB=0
−
V
Fig.3 Grounded emitter output
characteristics (II)
−1
IC/IB=
50
20
10
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
COLLECTOR CURRENT : IC (
Ta=25˚C
mA)
VCE= −6V
mA)
V
(
CE(sat)
−0.5
−0.2
−0.1
−0.05
COLLECTOR SATURATION VOLTAGE : V
Fig.6 Collector-emitter saturation
voltage vs. collector current (
pF)
pF)
10
5
2
COLLECTOR TO BASE VOLTAGE : VCB (V
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
EMITTER TO BASE VOLTAGE : VEB (V)
Cib
Cob
−0.5 −20
−1 −2 −5 −10
Ta=25˚C
f=1MHz
I
E
I
C
=0A
=0A
Ta=25˚C
V
E
(
mA)
CE
= −12V
50 10
Fig.9 Collector output capacitance vs
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.B