Datasheet 2SA1515S, 2SB1132, 2SB1237 Datasheet (ROHM)

2SB1132 / 2SA1515S / 2SB1237

Transistors

Medium Power Transistor (−32V,−1A)

2SB1 132 / 2SA1515S / 2SB1237

zFeatures

1) Low V

CE(sat).

V

CE(sat) = −0.2V(T yp.)

(I

C / IB = −500mA / −50mA)

2) Compliments 2SD1664 / 2SD1858

zStructure

Epitaxial planar type PNP silicon transistor

zExternal dimensions (Unit : mm)

2SB1132

+

−

0.5 0.1

+

−

0.3

−0.1

+0.2

2.5

4.0

0.4 0.1

+

−

1.5 0.1

1.0 0.2

ROHM : MPT3 EIAJ : SC-62

Abbreviated symbol: BA

2SB1237

0.65Max.

(1)

Denotes h

∗

+

−

+

−

+

6.8 0.2

−

(2)

(3)

2.54

ROHM :

FE

+0.2

4.5

−0.1

+

1.6 0.1

−

+

0.5 0.1

−

+

3.0 0.2

−

0.5 0.1

ATV

(3)(2)(1)

0.4 0.1

1.5 0.1

(1) Base (2) Collector (3) Emitter

0.9

1.0

+

−

1.5

+

−

∗

+

−

4.4 0.2

+

−

14.5 0.5

1.05

(1) Emitter (2) Collector (3) Base

+0.2

−0.1

+

2.5 0.2

−

0.4

+

0.45 0.1

−

+0.1

−0.05

2SA1515S

+

4 0.2 2 0.2

−

+

−

3 0.2(15Min.)

3Min.

+0.15

0.45

−0.05

+0.4

2.5

5

(1)

ROHM : SPT EIAJ : SC-72

−0.1

(2) (3)

0.5

(1) Emitter (2) Collector (3) Base

+

−

+0.15

0.45

−0.05

Rev.B 1/4

Transistors

zAbsolute maximum ratings (Ta=25°C)

Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage

Collector current

2SB1132

Collector power dissipation

2SA1515S

2SB1237 Junction temperature Storage temperature

1 Single pulse, Pw=100ms

∗

2 When mounted on a 40 40 0.7 mm ceramic board.

∗

3 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2 or larger.

∗

+

zElectrical characteristics (Ta=25°C)

Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage

DC current transfer ratio

2SB1132, 2SB1237

2SA1515S − 390 − Transition frequency Output capacitance

Measured using pulse current.

∗

zPackaging specifications and h

Symbol Limits Unit

CBO

V V

CEO

V

EBO

C

I

−40 V

−32

−5

−1

0.5

P

C

2

0.3 1

Tj

Tstg

+

150

−55 to +150

Min.

CBO

FE

BV BV BV

V

I I

CE(sat)

h

Cob

CBO

EBO

f

CEO

EBO

FE

T

−40

−32

−5

−

82

120

−

2SB1132 / 2SA1515S / 2SB1237

V V

A(DC)

W

C C

1

∗

2

∗

3

∗

VI

I

V

I

V

µA

V

µA

I

V

−

V

MHz

V

pF

C

E

= −

CB

EB

C/IB

CE

CB

= − = −

50µA 1mA 50µA

= −

= − = −

20V 4V

500mA/−50mA

3V, I

C

= −

0.1A

5V, I

E

=

50mA, f=30MHz

10V, I

E

=

0A, f=1MHz

A(Pulse)−2

Typ. Max. Unit Conditions

−

−0.5

−

−0.5

−

−0.5

−0.2

390

−

150

20

−

30

∗ ∗

Type 2SB1132 2SA1515S 2SB1237

Package Code

FE

h

Basic ordering unit (pieces) PQR QR PQR

T100 TP 1000 5000

Taping

−

−−

TU2

2500

−−

−

h

FE values are classified as follows :

Item P Q R

FE

h

82 to 180 120 to 270 180 to 390

Rev.B 2/4

Transistors

zElectrical characteristics curves

-500

-200

(mA)

C

Ta=100 C

-100

COLLECTOR CURRENT : I

25 C

−

55 C

-50

-20

-10

-5

-2

-1 0

-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6

BASE TO EMITTER VOLTAGE : V

Fig.1 Grounded emitter

propagation characteristics

1000

FE

500

Ta=100 C

200

100

DC CURRENT GAIN : h

50

−1 −2 −5 −10 −20 −50 −100 −200 −500−1000 COLLECTOR CURRENT : I

25 C

−55 C

Fig.4 DC current gain vs.

collector current

(MHz)

T

200

100

50

TRANSITION FREQUENCY : f

20

−1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : I

Fig.7 Gain bandwidth product vs. emitter current

E

C

(mA)

V

CE

= −

BE

V

= −

CE

(mA)

(ΙΙ)

Ta=25 C

V

= −

CE

6V

(V)

3V

5V

2SB1132 / 2SA1515S / 2SB1237

−

500

−3.0

−3.5

−4.0

(mA)

−4.5

−

400

C

−5.0

−

300

−

200

−

100

COLLECTOR CURRENT : I

0

−

0.4−0.8−1.2−1.6

COLLECTOR TO EMITTER VOLTAGE : V

Fig.2 Grounded emitter output

characteristics

−

1

(V)

Ta=25 C

=10

I

C/IB

CE(sat )

−

0.5

−

0.2

−

0.1

−

0.05

−

0.02

−

0.01

−1 −2 −

5

COLLECTOR SATURATION VOLTAGE : V

−10 −20 −50 −100 −200 −500 −1000

COLLECTOR CURRENT : I

Fig.5 Collector-emitter saturation

voltage vs. collector current

100

(pF)

50

20

10

COLLECTOR OUTPUT CAPACITANCE : Cob

−0.5 −1 −2 −5 −10 −20

COLLECTOR TO BASE VOLTAGE : VCB

Fig.8 Collector output capacitance vs.collector-base voltage

−2.5

Ta=25 C

I

=

B

C

(mA)

Ta=25 C

f=1MHz

I

E

−2.0

−1.5

−1.0

−0.5

0mA

=0A

Ta=25 C

1000

FE

500

VCE= −3V

200

100

DC CURRENT GAIN : h

50

−1

−

2.0

(V)

CE

−2 −5 −10 −20 COLLECTOR CURRENT : I

−1V

−50

−100 −200 −500

C

−1000

(mA)

Fig.3 DC current gain vs.

collector current

−1.0

(V)

CE

−0.8

−0.6

−0.4

−0.2

lC= −300mA

COLLECTOR TO EMITTER VOLTAGE : V

−2000

0

−1 −2 −5 −10 −20 −50 −100 BASE CURRENT : I

lC= −500mA

B

(mA)

(Ι)

Ta=25 C

Fig.6 Collector-emitter saturation

−

5

−

2

(A)

C

−

1

−

0.5

−

0.2

−

0.1

−

0.05

COLLECTOR CURRENT : I

−

0.02

−

0.01 0

(V)

COLLECTOR TO EMITTER VOLTAGE : V

voltage vs. base current

P

w

=100ms

DC

Ta=25 C

∗Single pulse

−0.2 −0.5 −1 −2 −5 −10 −20 −50

=

10ms

∗

(V)

CE

Fig.9 Safe operation area

(2SB1132)

Rev.B 3/4

Transistors

1000

( C/W)

th

100

10

1

0.1

0.001

0.01

0.1

TRANSIENT THERMAL RESISTANCE : R

Fig.10 Transient thermal resistance

(2SB1132)

TIME : t

10 100 1000

1

(s)

Ta=25 C

2SB1132 / 2SA1515S / 2SB1237

−5

∗

I

C Max

−2

(A)

C

−1

−

0.5

0.2

−

0.1

−

0.05

COLLECTOR CURRENT : I

−

0.02

−

0.01

0.1

−50

−

COLLECTOR TO EMITTER VOLTAGE : V

.

∗

PW =10ms P

=

100

ms

W

DC

−

0.2

−

0.5

−1 −2 −5 −10 −20

Fig.11 Safe operation area

(2SB1237)

Ta=25 C

∗

Single pulse

∗

( C/W)

th

TRANSIENT THERMAL

RESISTANCE : R

(V)

CE

Fig.12 Transient thermal resistance

200

100

50

20

10

5

2

0.1

(2SB1237)

Ta=25 C

1 10 100

TIME : t

(s)

10000.01

Rev.B 4/4

Appendix

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1