High-voltage Amplifier Transistor (120V, 50mA)
2SA1579 / 2SA1514K
Features Dimensions (Units : mm)
1) High breakdown voltage. (BVCEO = 120V)
2) Complements the 2SC4102 / 2SC3906K
Absolute maximum ratings (Ta=25C)
Parameter Symbol
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Packaging specifications and hFE
Type 2SA1514K
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes h
∗
FE
2SA1579
UMT3
RS
R
∗
T106
3000
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BV
BV
BV
V
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
Cob
Limits
−120
−120
−55 to +150
SMT3
RS
R
∗
T146
3000
−120
−120
−5
−
−
−
180
−
−
−5
−50
0.2
150
−
−
−
−
−
−
−
140
3.2
Unit
V
V
V
mA
W
°C
°C
−
−
−
−0.5
−0.5
−0.5
560
−
−
μA
μA
MHz
pF
V
V
V
V
−
2SA1579
)
3
(
0.3
1.25
2.1
0.15
0.1Min.
0~0.1
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SA1514K
)
3
(
0.4
0.15
0.3Min.
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
I
C
= −50μA
I
C
= −1mA
E
= −50μA
I
CB
= −100V
V
V
EB
= −4V
C/IB
= −10mA/−1mA
I
V
CE
= −6V, IC= −2mA
V
CE
= −12V, IE=2mA, f=100MHz
V
CB
= −12V, IE=0A, f=1MHz
)
1
(
0.65
)
2
2.0
1.3
(
0.65
0.2
0.9
0.7
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
)
1
(
1.9
2.9
)
2
(
0.95 0.95
1.6
2.8
1.1
0.8
Each lead has same dimensions
0 to 0.1
(1) Emitter
(2) Base
(3) Collector
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○c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.B
2SA1579 / 2SA1514K
Data Sheet
Electrical characteristics curves
−10
Ta=25°C
(mA)
−8
C
−6
−4
−2
COLLECTOR CURRENT : I
0 −20−16−12−8−4
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Ground emitter output characteristics
Ta=25°C
(V)
CE(sat)
−0.5
−0.2
IC/IB=50/1
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.4 Collector-Emitter saturation voltage
vs. collector current
20
Cib
10
20/1
10/1
−25.0
−22.5
−20.0
−17.5
−15.0
−12.5
−10.0
−7.5
−5.0
−2.5μA
IB=0
C
(mA)
Ta=25
f=1MHZ
IC=0A
(V)
CE
°C
−50
−20
(mA)
C
−10
−5
−2
−1
−0.5
−0.2
COLLECTOR CURRENT : I
−0.1
0 −1.6−1.4−1.2−1.0−0.8−0.6−0.4−0.2
BASE TO EMITTER VOLTAGE : V
Fig.2 Ground emitter propagation
characteristics
Ta=25°C
VCE= −6V
)
Z
(MH
500
T
200
100
50
TRANSITION FREQUENCY : f
0.5 1 2 5 10 20 50
EMITTER CURRENT : I
E
(mA)
Fig.5 Transition frequency
vs. emitter current
Ta=25°C
VCE= −6V
BE
Ta=25°C
500
FE
VCE= −1V
200
100
DC CURRENT GAIN : h
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50
(V)
COLLECTOR CURRENT : I
C
−5V
−3V
(mA)
Fig.3 DC current gain vs. collector current
20
Ta=25°C
(pF)
f=1MHZ
IE=0A
10
5
2
1
COLLECTOR OUTPUT CAPACITANCE : Cob
−0.5 −1 −2 −5 −10 −20
COLLECTOR TO BASE VOLTAGE : V
Cob
CB
(V)
Fig.6 Collector output capacitance
vs. collector-base voltage
5
2
EMITTER INPUT CAPACITANCE : Cib (pF)
1
−0.5 −1 −2 −5 −10 −20
EMITTER TO BASE VOLTAGE : V
Fig.7 Emitter input capacitance
vs. emitter-base voltage
EB
(V)
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○c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.B