ROHM 2SA1514K User Manual

High-voltage Amplifier Transistor (120V, 50mA)

2SA1579 / 2SA1514K

Features Dimensions (Units : mm)

1) High breakdown voltage. (BVCEO = 120V)

2) Complements the 2SC4102 / 2SC3906K

Absolute maximum ratings (Ta=25C)

Parameter Symbol

V

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

CBO

V

CEO

V

EBO

I

C

P

C

Tj

Tstg

Packaging specifications and hFE

Type 2SA1514K

Package

h

FE

Marking

Code

Basic ordering unit (pieces)

Denotes h

∗

FE

2SA1579

UMT3

RS

R

∗

T106

3000

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions

CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

BV

BV

BV

V

CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

Cob

Limits

−120

−120

−55 to +150

SMT3

RS

R

∗

T146

3000

−120

−120

−5

−

−

−

180

−

−

−5

−50

0.2

150

−

−

−

−

−

−

−

140

3.2

Unit

V

V

V

mA

W

°C

°C

−

−

−

−0.5

−0.5

−0.5

560

−

−

μA

μA

MHz

pF

V

V

V

V

−

2SA1579

)
3

(

0.3

1.25

2.1

0.15

0.1Min.

0~0.1

ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323

2SA1514K

)
3
(

0.4

0.15

0.3Min.

ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346

I

C

= −50μA

I

C

= −1mA

E

= −50μA

I

CB

= −100V

V

V

EB

= −4V

C/IB

= −10mA/−1mA

I

V

CE

= −6V, IC= −2mA

V

CE

= −12V, IE=2mA, f=100MHz

V

CB

= −12V, IE=0A, f=1MHz

)
1

(

0.65

)
2

2.0

1.3

(

0.65

0.2

0.9

0.7

Each lead has same dimensions

(1) Emitter
(2) Base
(3) Collector

)
1
(

1.9

2.9

)
2
(

0.95 0.95

1.6

2.8

1.1

0.8

Each lead has same dimensions

0 to 0.1

(1) Emitter
(2) Base
(3) Collector

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○c 2012 ROHM Co., Ltd. All rights reserved.

2012.01 - Rev.B

2SA1579 / 2SA1514K

Data Sheet

Electrical characteristics curves

−10

Ta=25°C

(mA)

−8

C

−6

−4

−2

COLLECTOR CURRENT : I

0 −20−16−12−8−4

COLLECTOR TO EMITTER VOLTAGE : V

Fig.1 Ground emitter output characteristics

Ta=25°C

(V)

CE(sat)

−0.5

−0.2

IC/IB=50/1

−0.1

−0.05

−0.2 −0.5 −1 −2 −5 −10 −20 −50

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.4 Collector-Emitter saturation voltage
vs. collector current

20

Cib

10

20/1

10/1

−25.0

−22.5

−20.0

−17.5

−15.0

−12.5

−10.0

−7.5

−5.0

−2.5μA

IB=0

C

(mA)

Ta=25
f=1MHZ
IC=0A

(V)

CE

°C

−50

−20

(mA)

C

−10

−5

−2

−1

−0.5

−0.2

COLLECTOR CURRENT : I

−0.1
0 −1.6−1.4−1.2−1.0−0.8−0.6−0.4−0.2

BASE TO EMITTER VOLTAGE : V

Fig.2 Ground emitter propagation
characteristics

Ta=25°C
VCE= −6V

)

Z

(MH

500

T

200

100

50

TRANSITION FREQUENCY : f

0.5 1 2 5 10 20 50

EMITTER CURRENT : I

E

(mA)

Fig.5 Transition frequency
vs. emitter current

Ta=25°C
VCE= −6V

BE

Ta=25°C

500

FE

VCE= −1V

200

100

DC CURRENT GAIN : h

50

−0.2 −0.5 −1 −2 −5 −10 −20 −50

(V)

COLLECTOR CURRENT : I

C

−5V

−3V

(mA)

Fig.3 DC current gain vs. collector current

20

Ta=25°C

(pF)

f=1MHZ
IE=0A

10

5

2

1

COLLECTOR OUTPUT CAPACITANCE : Cob

−0.5 −1 −2 −5 −10 −20

COLLECTOR TO BASE VOLTAGE : V

Cob

CB

(V)

Fig.6 Collector output capacitance
vs. collector-base voltage

5

2

EMITTER INPUT CAPACITANCE : Cib (pF)

1

−0.5 −1 −2 −5 −10 −20

EMITTER TO BASE VOLTAGE : V

Fig.7 Emitter input capacitance
vs. emitter-base voltage

EB

(V)

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○c 2012 ROHM Co., Ltd. All rights reserved.

2012.01 - Rev.B

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R1120A