Renesas RX66T, RX72T TECHNICAL UPDATE
RENESAS TECHNICAL UPDATE
TOYOSU FORESIA, 3-2-24, Toyosu, Koto-ku, Tokyo 135-0061, Japan
Renesas Electronics Corporation
Date: Mar. 24, 2021
Product
Category
Title
MPU/MCU
RX66T Group and RX72T Group, Extension of Data
Retention of Flash Memory
Document
No.
Information
Category
TN-RX*-A0249A/E
Technical Notification
Rev.
1.00
Lot No.
Applicable
Product
RX66T Group, RX72T Group
All
Reference
Document
User’s Manual: Hardware for applicable
products
(see the table at the last page)
This document describes the extension of the data retention of the flash memory specified in the “Electrical Characteristics”
chapter of User’s Manual: Hardware for the applicable products.
Page and table numbers are based on the RX66T Group. Refer to the table on the last page for the corresponding page and table
numbers in the other groups.
• Page 2287 of 2306
The specification of the data retention in Table 45.53, Code Flash Memory Characteristics is changed as follows.
Before correction
Table 45.53 Code Flash Memory Characteristics
Conditions: Omitted.
Item Symbol
Data retention*
Note 3. This shows the characteristic when the program/erase cycle does not exceed the specified value.
3
t
DRP
FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz
Min. Typ. Max. Min. Typ. Max.
Omitted.
10 ——10 — — Year
Omitted.
After correction
Table 45.53 Code Flash Memory Characteristics
Conditions: Omitted.
Item Symbol
Data retention*
Note 3. This shows the characteristics when a self-programming library provided by Renesas Electronics or a flash programmer is used
Note 4. This result is obtained from reliability testing.
3, *4
and the program/erase cycle does not exceed the specified value.
t
DRP
FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz
Min. Typ. Max. Min. Typ. Max.
Omitted.
20 ——20 — — Year Ta ≤ 85°C
10 ——10 —— T
Omitted.
Unit Conditions
≤ 105°C
a
Unit
©2021. Renesas Electronics Corporation, All rights reserved. Page 1 of 2
RENESAS TECHNICAL UPDATE TN-RX*-A0249A/E
Date: Mar. 24, 2021
• Page 2288 of 2306
The specification of the data retention in Table 45.54, Data Flash Memory Characteristics is changed as follows.
Before correction
Table 45.54 Data Flash Memory Characteristics
Conditions: Omitted.
Item Symbol
Data retention*
Note 3. This shows the characteristic when the program/erase cycle does not exceed the specified value.
3
t
DRP
After correction
Table 45.54 Data Flash Memory Characteristics
Conditions: Omitted.
Item Symbol
Data retention*
Note 3. This shows the characteristics when a self-programming library provided by Renesas Electronics or a flash programmer is used
Note 4. This result is obtained from reliability testing.
3, *4
and the program/erase cycle does not exceed the specified value.
t
DRP
FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz
Min. Typ. Max. Min. Typ. Max.
Omitted.
10 ——10 — — Year
Omitted.
FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz
Min. Typ. Max. Min. Typ. Max.
Omitted.
20 ——20 — — Year Ta ≤ 85°C
10 ——10 —— T
Omitted.
Unit Conditions
Unit
≤ 105°C
a
Reference Documents
Applicable Products Manual Title (Document Number)
RX66T Group RX66T Group User’s Manual: Hardware Rev1.10 (R01UH0749EJ0110)
RX72T Group RX72T Group User’s Manual: Hardware Rev1.00 (R01UH0803EJ0100)
Page Number, Section/Figure/Table Number
Item
Code flash memory characteristics
Data flash memory characteristics
Page Number, Section/Figure/Table Number
RX66T Group RX72T Group
Page 2287 of 2306
Table 45.53
Page 2288 of 2306
Table 45.54
Page 2263 of 2277
Table 46.51
Page 2264 of 2277
Table 46.52
Page 2 of 2
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