Renesas RX64M, RX71M TECHNICAL UPDATE
RENESAS TECHNICAL UPDATE
TOYOSU FORESIA, 3-2-24, Toyosu, Koto-ku, Tokyo 135-0061, Japan
Renesas Electronics Corporation
Date: Mar. 24, 2021
Product
Category
Title
MPU/MCU
RX64M Group and RX71M Group, Extension of Data
Hold Time (Retention) of Flash Memory
Document
No.
Information
Category
TN-RX*-A0247A/E
Technical Notification
Rev.
1.00
Lot No.
Applicable
Product
RX64M Group, RX71M Group
All
Reference
Document
User’s Manual: Hardware for applicable
products
(see the table at the last page)
This document describes the extension of the data hold time (retention) of the flash memory specified in the “Electrical
Characteristics” chapter of User’s Manual: Hardware for the applicable products.
Page and table numbers are based on the RX64M Group. Refer to the table on the last page for the corresponding page and
table numbers in the other groups.
• Page 2903 of 2936
The specification of the data hold time in Table 64.53, Code Flash Memory Characteristics is changed as follows.
Before correction
Table 64.53 Code Flash Memory Characteristics
Conditions: Omitted.
Item Symbol
Data hold time*
Note 3. This shows the characteristics when reprogramming is performed within the specified range, including the minimum value.
3
t
DRP
FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz
Min. Typ. Max. Min. Typ. Max.
Omitted.
10 ——10 — — Year
Omitted.
Omitted.
After correction
Table 64.53 Code Flash Memory Characteristics
Conditions: Omitted.
FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz
Min. Typ. Max. Min. Typ. Max.
Omitted.
20 ——20 — — Year Ta ≤ 85°C
10 ——10 —— T
Omitted.
Unit Conditions
Data retention*
Item Symbol
3, *4
t
DRP
Unit
≤ 105°C
a
Note 3. This shows the characteristics when a self-programming library provided by Renesas Electronics or a flash programmer is used
and the program/erase cycle does not exceed the specified value.
Note 4. This result is obtained from reliability testing.
©2021. Renesas Electronics Corporation, All rights reserved. Page 1 of 2
Omitted.
RENESAS TECHNICAL UPDATE TN-RX*-A0247A/E
Date: Mar. 24, 2021
• Page 2904 of 2936
The specification of the data hold time in Table 64.54, Data Flash Memory Characteristics is changed as follows.
Before correction
Table 64.54 Data Flash Memory Characteristics
Conditions: Omitted.
FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz
Min. Typ. Max. Min. Typ. Max.
Omitted.
10 ——10 — — Year
Omitted.
Data hold time*
Item Symbol
3
t
DRP
Unit
Note 3. This shows the characteristics when reprogramming is performed within the specified range, including the minimum value.
Omitted.
After correction
Table 64.54 Data Flash Memory Characteristics
Conditions: Omitted.
Item Symbol
Data retention*
Note 3. This shows the characteristics when a self-programming library provided by Renesas Electronics or a flash programmer is used
Note 4. This result is obtained from reliability testing.
3, *4
and the program/erase cycle does not exceed the specified value.
t
DRP
FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz
Min. Typ. Max. Min. Typ. Max.
Omitted.
20 ——20 — — Year Ta ≤ 85°C
10 ——10 —— T
Omitted.
Omitted.
Unit Conditions
Reference Documents
≤ 105°C
a
Applicable Products Manual Title (Document Number)
RX64M Group RX64M Group User’s Manual: Hardware Rev.1.10 (R01UH0377EJ0110)
RX71M Group RX71M Group User’s Manual: Hardware Rev.1.10 (R01UH0493EJ0110)
Page Number, Section/Figure/Table Number
Item
Code flash memory characteristics
Data flash memory characteristics
Page Number, Section/Figure/Table Number
RX64M Group RX71M Group
Page 2903 of 2936
Table 64.53
Page 2904 of 2936
Table 64.54
Page 2923 of 2952
Table 64.56
Page 2924 of 2952
Table 64.57
Page 2 of 2
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