RECTRON RS2001M, RS2002M, RS2003M, RS2004M, RS2005M Datasheet
...
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 20 Amperes
FEATURES
* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 300 amperes peak
* Ideal for printed cikcuit boakds
* High forward surge current capability
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.106 (2.7
.096 (2.3
.094 (2.4
.078 (2.0
.043 (1.1
.035 (0.9
)
)
)
)
)
)
.402 (10.2
.386 (9.8
1.193 (30.3
1.169 (29.7
)
.303 (7.7
)
.287 (7.3
RS2001M
THRU
RS2007M
)
4.2
(
.165
)
)
)
5
(
.197
)
3.8
(
.150
.150 (3.8
.134 (3.4
)
)
17.7
20.3
(
(
.697
.800
)
)
17.0
18.0
(
(
.669
.708
)
11.2
(
.441
)
)
)
)
.303 (7.7
.287 (7.3
)
10.8
(
.425
)
)
RS-20M
)
.189 (4.8
)
.173 (4.4
)
3.1
(
f.134
)
.114 (2.9
)
.098 (2.5
)
.031 (0.8
)
.023 (0.6
)
3.1
(
.122
-
MAXIMUM RATINGS
(At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 100oC
with heatsink
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per element at 10A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@TA = 25oC
@TC = 100oC
Dimensions in inches and (millimeters)
SYMBOL UNITSRS2001M RS2003M RS2004MRS2002M RS2005M RS2006M RS2007M
V
RRM
V
RMS
V
DC
I
O
I
FSM
TJ,T
SYMBOL
V
F
I
R
50 200 400100 600 800 1000
35 140 28070 420 560 700
50 200 400100 600 800 1000 Volts
300
STG
-55 to + 150
RS2001M RS2003M RS2004MRS2002M RS2005M RS2006M RS2007M
1.1
10
0.2 mAmps
Volts
Volts
Amps20
Amps
0
C
UNITS
Volts
uAmps
2001-5
RATING AND CHARACTERISTIC CURVES (RS2001M THRU RS2007M)
TYPICAL INSTANTANEOUS FORWARD
30
20
10
5
TC = 150 (TYP)
2
1
0.5
0.2
INSTANTANEOUS FORWARD CURRENT, (A)
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, (V)
300
250
200
PEAK FORWARD SURGE CURRENT, (A)
150
1 2 5 10 20 50 100
CHARACTERISTICS
TC = 25 (TYP)
pulse test
per one diode
SURGE FORWARD CURRENT CAPABILITY
sine wave
FSM
I
0
8.3ms 8.3ms
1 cycle
non-repetitive
Tj=25
NUMBER OF CYCLE
POWER DISSIPATION
60
sine wave
Tj=150
50
(W)
F
40
30
20
POWER DISSIPATION P
10
0
04812162024
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
TYPICAL FORWARD CURRENT
4
3
2
1
AVERAGE FORWARD CURRENT, (A)
0
0 40 80 120 160
DERATING CURVE
on glass-epoxi substrate
P.C.B
soldering land 5mmf
sine wave
R-load
free in air
AMBIENT TEMPERATURE, ( )
TYPICAL FORWARD CURRENT
22
20
18
16
14
AVERAGE FORWARD CURRENT, (A)
12
80 90 100 110 120 130 140 150 160
DERATING CURVE
CASE TEMPERATURE, ( )
heatsink
Tc
sine wave
R-load
on heatsink
CONTACT THERMAL RESISTANCE fcf
Tc
1
0.9
0.8
0.7
0.6
0.5
THERMAL RESISTANCE ( /W)
0.4
2345678
MOUNTING TORQUE (Kg.cm)
with thermal compound
RECTRON
Loading...